Abstract: Systems, apparatuses, and methods related to memory bank protection are described. A quantity of errors within a single memory bank can be determined and the determined quantity can be used to further determine whether to access other memory banks to correct the determined quantity. The memory bank protection described herein can avoid a single memory bank of a memory die being a single point of failure (SPOF).

Abstract: The present disclosure includes apparatuses and methods for providing energy information to memory. An embodiment includes determining, by a host, that a charge level of an energy source coupled to the host has reached or exceeded a threshold value, and transmitting, from the host to a memory device coupled to the host, signaling indicative of an energy mode for the memory device, wherein the signaling is transmitted based at least in part on determining that the charge level of the energy source has reached or exceeded the threshold.

Abstract: The present disclosure includes apparatuses and methods for command queuing. A number of embodiments include receiving a queued command request at a memory system from a host, sending a command response from the memory system to the host that indicates the memory system is ready to receive a command in a command queue of the memory system, and receiving, in response to sending the command response, a command descriptor block for the command at the memory system from the host.

Abstract: The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: providing at least a faster memory portion having a lower latency and higher throughput with respect to said non-volatile memory portions and being by-directionally connected to said controller; using said faster memory portion as a read and/or write cache memory for copying the content of memory regions including more frequently read or written logical blocks of said plurality of non-volatile memory portions. A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

Abstract: An example apparatus includes a memory comprising a plurality of managed units corresponding to respective groups of resistance variable memory cells and a controller coupled to the memory. The controller is configured to cause performance of a cleaning operation on a selected group of the memory cells and generation of error correction code (ECC) parity data. The controller may be further configured to cause performance of a write operation on the selected group of cells to write an inverted state of at least one data value to the selected group of cells and write an inverted state of at least one of the ECC parity data to the selected group of cells.

Abstract: Methods, systems, and devices for log management maintenance operation and command are described. A method may include receiving, at a memory system, a command associated with maintenance for the memory system and indicating to initiate collecting values of a parameter, storing a value of the parameter, and transmitting, to a host system, a message indicating an availability of the value of the parameter based at least in part on storing the value of the parameter. An additional method may include transmitting, to a host system, a message indicating that a quantity of errors for an address of an address space associated with the memory system satisfies a threshold, receiving a command associated with maintenance for the memory system and indicating a retirement of the address, and retiring the address for the address space associated with the memory system based at least in part on receiving the command.

Abstract: An apparatus can have a memory comprising an array of resistance variable memory cells and a controller. The controller can be configured to receive to a dedicated command to write all cells in a number of groups of the resistance variable memory cells to a first state without transferring any host data corresponding to the first state to the number of groups. The controller can be configured to, in response to the dedicated command, perform a read operation on each respective group to determine states of the cells in each respective group, determine from the read operation any cells in each respective group programmed to a second state, and write only the cells determined to be in the second state to the first state.

Abstract: Systems, apparatuses, and methods related to a controller for managing multiple types of memory are described. A controller includes a front end portion, a central controller portion, a back end portion, and a management unit can manage a first type of memory device that operates according to a first set of timing characteristics and a second type of memory device that operates according to a second set of timing characteristics. The central controller portion is configured to cause performance of a memory operation and comprises a cache memory to buffer data associated performance of the memory operation, a security component configured to encrypt the data before storing the data in the first type of memory device or the second type of memory device, and error correction code (ECC) circuitry to ECC encode and ECC decode the data.

Abstract: Methods, systems, and devices for operational modes for reduced power consumption in a memory system are described. A memory device may be coupled with a capacitor of a power management integrated circuit (PMIC). The memory device may operate in a first mode where a supply voltage is provided to the memory device from the PMIC. The memory device may operate in a second mode where it is isolated from the PMIC. When isolated, a node of the memory device (e.g., an internal node) may be discharged while the capacitor of the PMIC remains charged. When the memory device resumes operating in the first mode, a supply voltage may be provided to it based on the residual charge of the capacitor.

Abstract: The present disclosure includes apparatuses and methods for providing energy information to memory. An embodiment includes determining, by a host, that a charge level of an energy source coupled to the host has reached or exceeded a threshold value, and transmitting, from the host to a memory device coupled to the host, signaling indicative of an energy mode for the memory device, wherein the signaling is transmitted based at least in part on determining that the charge level of the energy source has reached or exceeded the threshold.

Abstract: The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: providing at least a faster memory portion having a lower latency and higher throughput with respect to said non-volatile memory portions and being by-directionally connected to said controller; using said faster memory portion as a read and/or write cache memory for copying the content of memory regions including more frequently read or written logical blocks of said plurality of non-volatile memory portions. A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

Abstract: Systems, apparatuses, and methods related to memory activation timing management are described herein. In an examples, memory activation timing management can include receiving a first command associated with a set of memory cells, activating the set of memory cells to perform a memory access responsive to the first command, pre-charging the set of memory cells associated with the first command, receiving a second command associated with the set of memory cells, determining that the set of memory cells associated with the first command is a recently activated set of the plurality of sets of memory cells, imparting a delay, and applying a sensing voltage to the set of memory cells associated with the second command to perform a memory access responsive to the second command.

Abstract: Systems, apparatuses, and methods related to memory activation timing management are described herein. In an examples, memory activation timing management can include receiving a first command associated with a set of memory cells, activating the set of memory cells to perform a memory access responsive to the first command, pre-charging the set of memory cells associated with the first command, receiving a second command associated with the set of memory cells, determining that the set of memory cells associated with the first command is a recently activated set of the plurality of sets of memory cells, imparting a delay, and applying a sensing voltage to the set of memory cells associated with the second command to perform a memory access responsive to the second command.

Abstract: Systems, apparatuses, and methods related to modified parity data using a poison data unit. An example method can include receiving, from a controller of a memory device, a first set of bits including data and a second set of at least one bit indicating whether the first set of bits comprises one or more erroneous or corrupted bits. The method can further include generating, at an encoder of the memory device, parity data associated with the first set of bits. The method can further include generating, at logic of the memory device, modified parity data with the parity data component and the second set of at least one bit. The method can further include writing the first set of bits and the modified parity data in an array of the memory device.

Abstract: An example apparatus includes a hybrid memory system to couple to a host and a controller coupled to the hybrid memory system. The controller may be configured to assign a sensitivity to a command and cause the command to be selectively diverted to the hybrid memory system based, at least in part, on the assigned sensitivity.

Abstract: Methods, systems, and devices for operational modes for reduced power consumption in a memory system are described. A memory device may be coupled with a capacitor of a power management integrated circuit (PMIC). The memory device may operate in a first mode where a supply voltage is provided to the memory device from the PMIC. The memory device may operate in a second mode where it is isolated from the PMIC. When isolated, a node of the memory device (e.g., an internal node) may be discharged while the capacitor of the PMIC remains charged. When the memory device resumes operating in the first mode, a supply voltage may be provided to it based on the residual charge of the capacitor.

Abstract: An example apparatus comprises a hybrid memory system and a controller coupled to the hybrid memory system. The controller may be configured to cause data to be selectively stored in the hybrid memory system responsive to a determination that an exception involving the data has occurred.

Abstract: Methods, systems, and devices for timing parameter adjustment mechanisms are described. The memory system may receive an access command to access a block of data. Based on receiving the access command, the memory system may determine a parameter (e.g., a timing parameter) associated with accessing the block of data. The timing parameter may indicate a duration between a first time to access a first page of the block of data and a second time to access a second page of the block of data. The memory system may perform an access operation on the block of data based on determining the timing parameter.

Abstract: The present disclosure includes apparatuses and methods related to memory operations on data. An example method can include executing an operation by writing a first managed unit to a second managed unit, and placing the first managed unit in a free state, wherein the first managed unit is located at a particular distance from the second managed unit.

Abstract: Methods, systems, and devices for a memory system with centralized power management are described. A memory system may include memory devices and a power management circuit. The memory devices may use one or more supply voltages during operation of the memory devices, which may include supply voltages received from an external device and high supply voltages generated within the memory system. The power management circuit may receive supply voltages from the external device and generate the supply voltages to the memory devices. The memory devices may exclude charge pump circuitry for generating supply voltages and may instead include pads for receiving the supply voltages from the power management circuit, in some examples. The memory system may include a controller that is configured to determine an amount of power to provide to the memory devices and transmit an indication of the amount of power to the power management circuit.