Abstract: A processing device in a memory system receives, from a host system, a host-resident translation layer write command requesting that data associated with a logical block address be written to the memory device and that a physical address to which the data is written be returned in response and performs a write operation to write the data associated with the logical block address to the physical address of the memory device. The processing device updates a translation layer entry corresponding to the logical block address to include the physical address and sends, to the host system, a response to the host-resident translation layer write command, the response comprising the updated translation layer entry with the physical address. The host system can to store the updated translation layer entry with the physical address in a host-resident translation layer mapping table.

Abstract: An example apparatus includes a memory comprising a plurality of managed units corresponding to respective groups of resistance variable memory cells and a controller coupled to the memory. The controller is configured to cause performance of a cleaning operation on a selected group of the memory cells and generation of error correction code (ECC) parity data. The controller may be further configured to cause performance of a write operation on the selected group of cells to write an inverted state of at least one data value to the selected group of cells and write an inverted state of at least one of the ECC parity data to the selected group of cells.

Abstract: An apparatus can have an array of memory cells and a controller coupled to the array. The controller can be configured to read a group sentinel cells of the array and without reading a number of other groups of cells of the array to determine that data stored in the number of other groups of cells lacks integrity based on a determination that data stored in the group of sentinel cells lacks integrity.

Abstract: The present disclosure includes apparatuses and methods related to a hybrid memory system interface. An example computing system includes a processing resource and a storage system coupled to the processing resource via a hybrid interface. The hybrid interface can provide an input/output (I/O) access path to the storage system that supports both block level storage I/O access requests and sub-block level storage I/O access requests.

Abstract: The present disclosure includes apparatuses and methods related to hybrid memory management. An example apparatus can include a first memory array, a number of second memory arrays, and a controller coupled to the first memory array and the number of second memory arrays configured to execute a write operation, wherein execution of the write operation writes data to the first memory array starting at a location indicated by a write cursor, and place the write cursor at an updated location in the first memory array upon completing execution of the write operation, wherein the updated location is a next available location in the first memory array.

Abstract: The present disclosure includes apparatuses, and methods for data state synchronization. An example apparatus includes performing a write operation to store a data pattern in a group of resistance variable memory cells corresponding to a selected managed unit having a first status, updating a status of the selected managed unit from the first status to a second status responsive to performing the write operation, and providing data state synchronization for a subsequent write operation performed on the group by placing all of the variable resistance memory cells of the group in a same state prior to performing the subsequent write operation to store another data pattern in the group of resistance variable memory cells.

Abstract: An example apparatus includes a memory comprising a plurality of managed units corresponding to respective groups of resistance variable memory cells and a controller coupled to the memory. The controller is configured to cause performance of a cleaning operation on a selected group of the memory cells and generation of error correction code (ECC) parity data. The controller may be further configured to cause performance of a write operation on the selected group of cells to write an inverted state of at least one data value to the selected group of cells and write an inverted state of at least one of the ECC parity data to the selected group of cells.

Abstract: The present disclosure includes apparatuses and methods for command queuing. A number of embodiments include receiving a queued command request at a memory system from a host, sending a command response from the memory system to the host that indicates the memory system is ready to receive a command in a command queue of the memory system, and receiving, in response to sending the command response, a command descriptor block for the command at the memory system from the host.

Abstract: An example apparatus comprises a hybrid memory system to couple to a host and a controller coupled to the hybrid memory system. The controller may be configured to cause data associated with a virtual memory location of the host to be selectively transferred to the hybrid memory system responsive to a determination that a main memory of the host experiences threshold amount of resource utilization.

Abstract: An example apparatus comprises a hybrid memory system to couple to a host and a controller coupled to the hybrid memory system. The controller may be configured to cause data associated with a virtual memory location of the host to be selectively transferred to the hybrid memory system responsive to a determination that a main memory of the host experiences threshold amount of resource utilization.

Abstract: The present disclosure includes apparatuses and methods for counter update operations. An example apparatus comprises a memory including a managed unit that includes a plurality of first groups of memory cells and a second group of memory cells, in which respective counters associated with the managed unit are stored on the second group of memory cells. The example apparatus further includes a controller. The controller includes a core configured to route a memory operation request received from a host and a datapath coupled to the core and the memory. The datapath may be configured to issue, responsive to a receipt of the memory operation request routed from the core, a plurality of commands associated with the routed memory operation request to the memory to perform corresponding memory operations on the plurality of first groups of memory cells. The respective counters may be updated independently of the plurality of commands.

Abstract: An example apparatus comprises a hybrid memory system and a controller coupled to the hybrid memory system. The controller may be configured to cause data to be selectively stored in the hybrid memory system responsive to a determination that an exception involving the data has occurred.

Abstract: An example apparatus includes a hybrid memory system to couple to a host and a controller coupled to the hybrid memory system. The controller may be configured to assign a sensitivity to a command and cause the command to be selectively diverted to the hybrid memory system based, at least in part, on the assigned sensitivity.

Abstract: Apparatuses and methods for variable latency memory operations are disclosed herein. An example apparatus may include a memory configured to provide first information during a variable latency period indicating the memory is not available to perform a command, wherein the first information is indicative of a remaining length of the variable latency period, the remaining length is one of a relatively short, normal, or long period of time, the memory configured to provide second information in response to receiving the command after the latency period.

Abstract: The present disclosure includes apparatuses, methods, and systems for data relocation in hybrid memory. A number of embodiments include a memory, wherein the memory includes a first type of memory and a second type of memory, and a controller configured to identify a subset of data stored in the first type of memory to relocate to the second type of memory based, at least in part, on a frequency at which an address corresponding to the subset of data stored in the first type of memory has been accessed during program operations performed on the memory.

Abstract: The present disclosure includes apparatuses and methods for counter update operations. An example apparatus comprises a memory including a managed unit that includes a plurality of first groups of memory cells and a second group of memory cells, in which respective counters associated with the managed unit are stored on the second group of memory cells. The example apparatus further includes a controller. The controller includes a core configured to route a memory operation request received from a host and a datapath coupled to the core and the memory. The datapath may be configured to issue, responsive to a receipt of the memory operation request routed from the core, a plurality of commands associated with the routed memory operation request to the memory to perform corresponding memory operations on the plurality of first groups of memory cells. The respective counters may be updated independently of the plurality of commands.

Abstract: An example apparatus includes a hybrid memory system to couple to a host and a controller coupled to the hybrid memory system. The controller may be configured to assign a sensitivity to a command and cause the command to be selectively diverted to the hybrid memory system based, at least in part, on the assigned sensitivity.

Abstract: An example apparatus comprises a hybrid memory system and a controller coupled to the hybrid memory system. The controller may be configured to cause data to be selectively stored in the hybrid memory system responsive to a determination that an exception involving the data has occurred.

Abstract: The present disclosure includes apparatuses, methods, and systems for data relocation in memory having two portions of data. An embodiment includes a memory having a plurality of physical blocks of memory cells, and a first and second portion of data having a first and second, respectively, number of logical block addresses associated therewith. Two of the plurality of physical blocks of cells do not have data stored therein. Circuitry is configured to relocate the data of the first portion that is associated with one of the first number of logical block addresses to one of the two physical blocks of cells that don't have data stored therein, and relocate the data of the second portion that is associated with one of the second number of logical block addresses to the other one of the two physical blocks of cells that don't have data stored therein.

Abstract: The present disclosure includes apparatuses, and methods for data state synchronization. An example apparatus includes performing a write operation to store a data pattern in a group of resistance variable memory cells corresponding to a selected managed unit having a first status, updating a status of the selected managed unit from the first status to a second status responsive to performing the write operation, and providing data state synchronization for a subsequent write operation performed on the group by placing all of the variable resistance memory cells of the group in a same state prior to performing the subsequent write operation to store another data pattern in the group of resistance variable memory cells.