Abstract: An apparatus including a contact point formed on a device layer of a circuit substrate or an interconnect layer on the substrate; a first dielectric material; and a different second polymerizable dielectric material on the substrate and separated from the device layer or the interconnect layer by the first dielectric material following polymerization, the second dielectric material comprising a glass transition temperature of at least 250° C. and a thermal decomposition temperature of at least 400° C. A method including depositing a dielectric material and thermally treating the dielectric material at a temperature greater than the thermal decomposition temperature.

Abstract: The present invention relates to a semiconductor package containing a package substrate, integrated heat spreader, and semiconductor die. An underfill material is embedded in the semiconductor package serving both as underfill and sealant.

Abstract: The present invention relates to a semiconductor package containing a package substrate, integrated heat spreader, and semiconductor die. An underfill material is embedded in the semiconductor package serving both as underfill and sealant.

Abstract: An optical-electrical interface includes an alignment interface and an optoelectronic die. The alignment interface is mounted to a substrate and includes a waveguide port to receive an external waveguide from a first side. The alignment interface includes a conductor disposed on a second side of the alignment interface to couple to a conductor on the substrate. The optoelectronic die is mounted to the second side of the alignment interface. The optoelectronic die includes an electrical port coupled to the conductor disposed on the alignment interface, an optoelectronic device coupled to the electrical port and an optical port aligned to optically couple the optoelectronic device to the external waveguide through the alignment interface.

Abstract: An underfill material, such as a no flow underfill material, containing an anhydride adduct of a rosin compound is disclosed. In one aspect, the anhydride adduct of a rosin compound contains an organic rosin acid moiety and a substitute moiety for a hydroxyl group of a carboxylic acid attached at an acyl group of the organic rosin acid moiety. In another aspect, the anhydride adduct of the rosin compound contains a plurality of linked organic rosin acid moieties. Methods of using the underfill materials and packages formed by curing the underfill materials are also disclosed.

Abstract: In some embodiments, a method includes picking up a clip with a chuck, and, while holding the clip with the chuck, picking up an integrated circuit (IC) die with the IC die in contact with the clip.

Abstract: Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material, between the first surface and the second surface, and a chamber defined by the first surface, the second surface, and the sealing material. An exemplary method may include disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material, and sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming an intermetallic compound with the liquid metal.

Abstract: An apparatus including a contact point formed on a device layer of a circuit substrate or an interconnect layer on the substrate; a first dielectric material; and a different second polymerizable dielectric material on the substrate and separated from the device layer or the interconnect layer by the first dielectric material following polymerization, the second dielectric material comprising a glass transition temperature of at least 250° C. and a thermal decomposition temperature of at least 400° C. A method including depositing a dielectric material and thermally treating the dielectric material at a temperature greater than the thermal decomposition temperature.

Abstract: The application discloses an apparatus comprising an optical die flip-chip bonded to a substrate and defining a volume between the optical die and the substrate, the optical die including an optically active area on a surface of the die facing the substrate, an optically transparent material occupying at least those portions of the volume substantially corresponding with the optically active area, and an underfill material occupying portions of the volume not occupied by the optically transparent material.

Abstract: An IC package is assembled from a bumpless die, a die carrier having a plurality of solder bumps thereon, and a heat spreader lid. The bumpless die is bonded to the heat spreader lid to form a module and then the module is bonded to the bumped die carrier.

Abstract: An underfill material, such as a no flow underfill material, containing an anhydride adduct of a rosin compound is disclosed. In one aspect, the anhydride adduct of a rosin compound contains an organic rosin acid moiety and a substitute moiety for a hydroxyl group of a carboxylic acid attached at an acyl group of the organic rosin acid moiety. In another aspect, the anhydride adduct of the rosin compound contains a plurality of linked organic rosin acid moieties. Methods of using the underfill materials and packages formed by curing the underfill materials are also disclosed.

Abstract: Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material, between the first surface and the second surface, and a chamber defined by the first surface, the second surface, and the sealing material. An exemplary method may include disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material, and sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming an intermetallic compound with the liquid metal.

Abstract: Electronic assemblies and methods for forming assemblies including a diamond substrate are described. One embodiment includes providing a diamond support and forming a porous layer of SiO2 on the diamond support. A diamond layer is formed by chemical vapor deposition on the porous layer so that the porous layer is between the diamond support and the diamond layer. A polycrystalline silicon layer is formed on the diamond layer. The polycrystalline silicon layer is polished to form a planarized surface. A semiconductor layer is coupled to the polysilicon layer. After coupling the semiconductor layer to the polysilicon layer, the diamond support is detached from the diamond layer by breaking the porous layer. The semiconductor layer on the diamond layer substrate is then further processed to form a semiconductor device.

Abstract: Some embodiments disclose a low temperature semiconductor packaging apparatus and method. An apparatus generally comprises a heat spreader, a silicon die, and a thermal interface material disposed between the heat spreader and the silicon die comprising a plurality of metals capable of forming a transient liquid phase bond. A method generally comprises attaching a silicon die to a substrate, depositing a thermal interface material on at least one of the silicon die and a heat spreader, and attaching the heat spreader to the silicon die, wherein the thermal interface material comprises a plurality of metals capable of forming a transient liquid phase bond. Other embodiments are also described and claimed.

Abstract: Optical apparatus, methods of forming the apparatus, and methods of using the apparatus are disclosed herein. In one aspect, an optical apparatus may include a substrate, an on-substrate microlens coupled with the substrate to receive light from an off-substrate light emitter and focus the light toward a focal point, and an on-substrate optical device coupled with the substrate proximate the focal point to receive the focused light. Communication of light in the reverse direction is also disclosed. Systems including the optical apparatus are also disclosed.

Abstract: An apparatus comprising a substrate having a trench therein, the trench extending to an edge of the substrate, a waveguide array positioned in the trench, the waveguide array extending to the edge of the substrate, and a ferrule attached at or near the edge of the substrate and spanning a width of the waveguide array, the ferrule being directly in contact with a surface of the waveguide array. A process comprising positioning a waveguide in a trench on a substrate, the waveguide extending to an edge of the substrate, and attaching a ferrule at or near the edge of the substrate, the ferrule including a recess having a bottom, wherein the bottom is in direct contact with a surface of the waveguide.

Abstract: Optical packages are disclosed. In one aspect, an optical package may include a surface, a microelectronic device coupled with the surface, a first waveguide coupled with the microelectronic device, a second waveguide having a first end that is evanescently coupled with the first waveguide and a second end, a first thickness of a cladding material disposed between the second end and the surface, and a second thickness of a cladding material disposed between the first end and the first waveguide. The first thickness may be greater than the second thickness. Methods of making the optical packages are also disclosed. Apparatus and methods of aligning operations on optical packages are also disclosed.

Abstract: Disclosed are embodiments of a method of attaching a die to a substrate and a heat spreader to the die in a single heating operation. A number of conductive bumps extending from the die may also be reflowed during this heating operation. Other embodiments are described and claimed.

Abstract: Amine-based no-flow underfill materials and a method to produce flip-chip devices electrically bonded to a substrate are described. The no-flow underfill material includes an amine-based curing agent and a fluxing agent, which activates at a fluxing temperature and is neutral at the temperatures lower than the fluxing temperature. The fluxing agent of the no-flow underfill material heated to the activation temperature generates a reactive acid in-situ during chip attachment process to facilitate joint formation. The no-flow underfill material is formed on the substrate. A chip is placed on the no-flow underfill material formed on the substrate. A temperature is increased to activate the fluxing agent. The temperature is further increased to form conductive joints between the chip and the substrate. Further, the no-flow underfill material is cured. The conductive joints between the chip and the substrate may be lead-free.

Abstract: Embodiments of an apparatus and method for attaching a semiconductor die to a heat spreader (or other thermal component) are disclosed. The apparatus includes a substantially flat surface to receive a number of die, and the die may be held in place on the surface by a flux, the flux being subsequently removed prior to bonding. The apparatus may further include a number of registration elements to hold a heat spreader in a relative position over each die. Other embodiments are described and claimed.