Patents by Inventor David B. Mitzi

David B. Mitzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200105964
    Abstract: A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.
    Type: Application
    Filed: December 3, 2019
    Publication date: April 2, 2020
    Inventors: Oki Gunawan, Homare Hiroi, Jeehwan Kim, David B. Mitzi, Hiroki Sugimoto
  • Patent number: 10580928
    Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: March 3, 2020
    Assignees: International Business Machines Corporation, Solar Frontier K.K.
    Inventors: Oki Gunawan, Homare Hiroi, Jeehwan Kim, David B. Mitzi, Hiroki Sugimoto
  • Publication number: 20200044107
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Application
    Filed: October 8, 2019
    Publication date: February 6, 2020
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Patent number: 10505066
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: December 10, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Patent number: 10355160
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: July 16, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jeehwan Kim, David B. Mitzi, Byungha Shin, Teodor K. Todorov, Mark T. Winkler
  • Patent number: 10147604
    Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Grant
    Filed: March 5, 2010
    Date of Patent: December 4, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Publication number: 20180261710
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 13, 2018
    Inventors: JEEHWAN KIM, DAVID B. MITZI, BYUNGHA SHIN, TEODOR K. TODOROV, MARK T. WINKLER
  • Publication number: 20180261711
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 13, 2018
    Inventors: JEEHWAN KIM, DAVID B. MITZI, BYUNGHA SHIN, TEODOR K. TODOROV, MARK T. WINKLER
  • Patent number: 10008625
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: June 26, 2018
    Assignee: International Business Machines Corporation
    Inventors: Jeehwan Kim, David B. Mitzi, Byungha Shin, Teodor K. Todorov, Mark T. Winkler
  • Publication number: 20170358702
    Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
    Type: Application
    Filed: August 8, 2017
    Publication date: December 14, 2017
    Inventors: Oki Gunawan, Homare Hiroi, Jeehwan Kim, David B. Mitzi, Hiroki Sugimoto
  • Patent number: 9806211
    Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: October 31, 2017
    Assignee: International Business Machines Corporation
    Inventors: Oki Gunawan, Jeehwan Kim, David B. Mitzi, Devendra K. Sadana, Teodor K. Todorov
  • Patent number: 9799792
    Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
    Type: Grant
    Filed: January 14, 2015
    Date of Patent: October 24, 2017
    Assignees: International Business Machines Corporation, Solar Frontier K.K.
    Inventors: Oki Gunawan, Homare Hiroi, Jeehwan Kim, David B. Mitzi, Hiroki Sugimoto
  • Patent number: 9716207
    Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.
    Type: Grant
    Filed: July 23, 2013
    Date of Patent: July 25, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Keith E. Fogel, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Publication number: 20170062634
    Abstract: Techniques for improved kesterite film production through annealing chamber conditioning to achieve solar cells with a power conversion efficiency of greater than 12% are provided. In one aspect, a method of conditioning an annealing chamber for forming a kesterite film is provided. The method includes the step of: coating one or more inner surfaces of the annealing chamber with a film containing Sn and at least one of S and Se. A method for forming a kesterite film, a method for forming a solar cell, and a solar cell are also provided.
    Type: Application
    Filed: August 25, 2015
    Publication date: March 2, 2017
    Inventors: Yu Luo, David B. Mitzi, Sean M. Seefeld, Xiaoyan Shao, Sathish Thiruvengadam
  • Publication number: 20160359072
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Application
    Filed: August 11, 2016
    Publication date: December 8, 2016
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Patent number: 9443997
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: September 13, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Publication number: 20160204304
    Abstract: A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.
    Type: Application
    Filed: January 14, 2015
    Publication date: July 14, 2016
    Inventors: Oki Gunawan, Homare Hiroi, Jeehwan Kim, David B. Mitzi, Hiroki Sugimoto
  • Patent number: 9390919
    Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2-xZn1+ySn(S1-zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: July 12, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: David B. Mitzi, Teodor K. Todorov
  • Patent number: 9324890
    Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: April 26, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: David B. Mitzi, Wei Liu, Min Yuan
  • Publication number: 20150340536
    Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
    Type: Application
    Filed: August 5, 2015
    Publication date: November 26, 2015
    Inventors: JEEHWAN KIM, DAVID B. MITZI, BYUNGHA SHIN, TEODOR K. TODOROV, MARK T. WINKLER