Patents by Inventor David B. Mitzi
David B. Mitzi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110097496Abstract: A method with enhanced safety characteristics of depositing a kesterite film, which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting an aqueous solvent, ammonia, a source of hydrazine, a source of Cu, a source of Sn, a source of Zn, a source of at least one of S and Se, under conditions sufficient to form an aqueous dispersion which includes solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.Type: ApplicationFiled: March 5, 2010Publication date: April 28, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David B. Mitzi, Teodor K. Todorov
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Publication number: 20110094557Abstract: A method of depositing a kesterite film which includes a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.Type: ApplicationFiled: October 27, 2009Publication date: April 28, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David B. Mitzi, Teodor K. Todorov
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Patent number: 7928419Abstract: The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.Type: GrantFiled: July 30, 2007Date of Patent: April 19, 2011Assignee: International Business Machines CorporationInventors: Kailash Gopalakrishnan, David B. Mitzi, Rohit S. Shenoy
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Patent number: 7838403Abstract: Techniques for fabricating a photovoltaic device having a chalcopyrite absorber layer, such as a copper indium gallium selenide/sulfide (CIGSS) absorber layer, are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A precursor solution of metal chalcogenide dissolved in hydrazine or a hydrazine-like solvent is formed. Spray pyrolysis in an inert environment is used to deposit the precursor solution onto a substrate to form a metal chalcogenide layer on the substrate. A buffer layer is formed adjacent to a side of the metal chalcogenide layer opposite the substrate. A transparent conductive contact is formed adjacent to a side of the buffer layer opposite the metal chalcogenide layer.Type: GrantFiled: September 14, 2009Date of Patent: November 23, 2010Assignee: International Business Machines CorporationInventors: Wei Liu, David B. Mitzi
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Patent number: 7833825Abstract: A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.Type: GrantFiled: January 16, 2009Date of Patent: November 16, 2010Assignee: International Business Machines CorporationInventors: David B. Mitzi, Simone Raoux
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Publication number: 20100041907Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.Type: ApplicationFiled: August 27, 2009Publication date: February 18, 2010Applicant: International Business Machines CorporationInventors: David B. Mitzi, Matthew W. Copel
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Publication number: 20100040891Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.Type: ApplicationFiled: August 27, 2009Publication date: February 18, 2010Applicant: International Business Machines CorporationInventors: David B. Mitzi, Matthew W. Copel
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Publication number: 20100040866Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.Type: ApplicationFiled: August 27, 2009Publication date: February 18, 2010Applicant: International Business Machines CorporationInventors: David B. Mitzi, Matthew W. Copel
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Publication number: 20100019238Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.Type: ApplicationFiled: August 27, 2009Publication date: January 28, 2010Applicant: International Business Machines CorporationInventors: David B. Mitzi, Matthew W. Copel
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Publication number: 20090320916Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.Type: ApplicationFiled: May 9, 2008Publication date: December 31, 2009Applicant: International Business Machines CorporationInventors: Min Yuan, David B. Mitzi, Wei Liu
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Patent number: 7618841Abstract: A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.Type: GrantFiled: August 21, 2006Date of Patent: November 17, 2009Assignee: International Business Machines CorporationInventors: David B Mitzi, Matthew W Copel
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Publication number: 20090236594Abstract: An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.Type: ApplicationFiled: April 14, 2009Publication date: September 24, 2009Applicant: International Business Machines CorporationInventors: David B. Mitzi, Christopher B. Murray, Dmitri V. Talapin
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Publication number: 20090145482Abstract: The present invention provides a photovoltaic device, such as, a solar cell, having a substrate and an absorber layer disposed on the substrate. The absorber layer includes a doped or undoped composition represented by the formula: Cu1-yIn1-xGaxSe2-zSz wherein 0?x?1; 0?y?0.15 and 0?z?2; wherein the absorber layer is formed by a solution-based deposition process which includes the steps of contacting hydrazine and a source of Cu, a source of In, a source of Ga, a source of Se, and optionally a source of S, and further optionally a source of a dopant, under conditions sufficient to produce a homogeneous solution; coating the solution on the substrate to produce a coated substrate; and heating the coated substrate to produce the photovoltaic device. A photovoltaic device and a process for making same based on a hydrazinium-based chalcogenide precursor are also provided.Type: ApplicationFiled: December 6, 2007Publication date: June 11, 2009Inventors: David B. Mitzi, Wei Liu, Min Yuan
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Publication number: 20090121211Abstract: A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.Type: ApplicationFiled: January 16, 2009Publication date: May 14, 2009Applicant: International Business Machines CorporationInventors: David B. Mitzi, Simone Raoux
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Patent number: 7517718Abstract: An inorganic nanocomposite is prepared by obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; dispersing a nanoentity in the precursor solution; applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.Type: GrantFiled: January 12, 2006Date of Patent: April 14, 2009Assignee: International Business Machines CorporationInventors: David B. Mitzi, Christopher B. Murray, Dmitri V. Talapin
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Patent number: 7494841Abstract: A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.Type: GrantFiled: May 12, 2006Date of Patent: February 24, 2009Assignee: International Business Machines CorporationInventors: David B. Mitzi, Simone Raoux
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Publication number: 20080314739Abstract: The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.Type: ApplicationFiled: July 30, 2007Publication date: December 25, 2008Applicant: International Business Machines CorporationInventors: Kailash Gopalakrishnan, David B. Mitzi, Rohit S. Shenoy
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Publication number: 20080314738Abstract: The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.Type: ApplicationFiled: June 19, 2007Publication date: December 25, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kailash Gopalakrishnan, David B. Mitzi, Rohit S. Shenoy
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Publication number: 20080292825Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: ApplicationFiled: July 3, 2008Publication date: November 27, 2008Applicant: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 7456045Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: August 1, 2006Date of Patent: November 25, 2008Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi