Abstract: The present invention relates to the inspection process which includes providing access to the microdevice contacts, measuring the microdevice and analyzing the data to identify defects or performance of the micro device. The invention also relates to the forming of test electrodes on microdevices. The test electrodes may be connected to hidden contacts. The type of microdevices may be vertical, lateral or a flip chip.

Abstract: The present invention relates to the inspection process which includes providing access to the microdevice contacts, measuring the microdevice and analyzing the data to identify defects or performance of the micro device. The invention also relates to the forming of test electrodes on microdevices. The test electrodes may be connected to hidden contacts. The type of microdevices may be vertical, lateral or a flip chip.

Abstract: Some implementations herein provide for a memory device and methods of formation. The memory device includes a plurality of storage cells arranged vertically and a plurality of corresponding gate all around transistors. Methods of forming the memory device include using a single trench to remove a liner material and form recesses that define cell contact lightly-doped drain regions of the gate all around transistors. Using the single trench to remove the liner material and form the recesses that define the cell contact lightly-doped drain region widths causes the cell contact lightly-doped drain regions to be formed having substantially similar widths.

Abstract: A controller includes a non-transitory computer readable medium configured to store information related to a target temperature of a wafer, a target temperature of a heating element, a temperature of the wafer, and a temperature of the heating element. The controller further includes a processor connected to the non-transitory computer readable medium, the processor configured to generate at least one heating signal during a baking process to adjust a duration of an entirety of the baking process in response to the temperature of the wafer and the temperature of the heating element.

Abstract: A controller includes a non-transitory computer readable medium configured to store information related to a target temperature of a wafer, a target temperature of a heating element, a temperature of the wafer, and a temperature of the heating element. The controller further includes a processor connected to the non-transitory computer readable medium, the processor configured to generate at least one heating signal during a baking process to adjust a duration of an entirety of the baking process in response to the temperature of the wafer and the temperature of the heating element.

Abstract: Disclosed herein are approaches for reducing EUV dose during formation of a patterned metal oxide photoresist. In one approach, a method may include providing a stack of layers atop a substrate, the stack of layers comprising a film layer, and implanting the film layer with ions. The method may further include depositing a metal oxide photoresist atop the film layer, and patterning the metal oxide photoresist.

Abstract: A method of supplying a chemical solution to a photolithography system. The chemical solution is pumped from a variable-volume buffer tank. The pumped chemical solution is dispensed in a spin-coater. The variable-volume buffer tank is refilled by emptying a storage container filled with the chemical solution into the variable-volume buffer tank.

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method of forming an LED involves forming a semiconductor structure on a substrate. The semiconductor structure includes a p-side semiconductor layer, an n-side semiconductor layer, and an active light emitting layer between the p-side semiconductor layer and the n-side semiconductor layer. The semiconductor structure is also formed to include a light outcoupling surface facing the substrate. The light outcoupling surface has a diameter less than twice an electron diffusion length of a material of the semiconductor structure. The method further involves implanting ions in an outer region of the semiconductor structure, then annealing the outer region after the ions have been implanted. The annealing causes the ions to intermix with atoms within the outer region, thereby increasing a bandgap of the outer region.

Abstract: A device including an activated p-type layer comprising a III-Nitride based Mg-doped layer grown by vapor phase deposition or a growth method different from MBE. The p-type layer is activated through a sidewall of the p-type layer after the removal of defects from the sidewall thereby increasing a hole concentration in the p-type layer. In one or more examples, the device includes an active region between a first n-type layer and the p-type layer; a second n-type layer on the p-type layer; and a tunnel junction between the second n-type layer and the p-type layer, and the activated p-type layer has a hole concentration characterized by a current density of at least 100 Amps per centimeter square flowing between the first n-type layer and the second n-type layer in response to a voltage of 4 volts or less applied across the first n-type layer and the second n-type layer.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.

Abstract: The subject technology detects a code commit at a code repository. The subject technology sends a request for a build job to a build server. The subject technology determines that the build job is completed. The subject technology sends a training request and user token to a proxy authenticator. The subject technology determines determining that the user token is validated. The subject technology sends a training request and the user token to a training job manager. Further, the subject technology determines determining that the training job is completed.

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.

Abstract: This disclosure is related to integrating microdevices into a system substrate. In particular the microdevices are transferred from a donor substrate into a system backplane where the microdevices connection pads are adhered to a pads on the system substrate at a temperature that is below the melting point of the materials on the pads of the system substrate and microdevice pads. The present disclosure also relates to integrating vertical microdevices into a system substrate. The system substrate can have a backplane circuit as well. The integration covers the microdevices with dielectrics and couples the backplane through a VIA. The disclosure further relates to a method and structure of microdevice or optoelectronic devices that allows for misalignment adjustment. The microdevices comprise a stack of semiconductor layers that in configuration with electrodes, substrate, VIA's and size factors minimize misalignment.

Abstract: A method of supplying a chemical solution to a photolithography system. The chemical solution is pumped from a variable-volume buffer tank. The pumped chemical solution is dispensed in a spin-coater. The variable-volume buffer tank is refilled by emptying a storage container filled with the chemical solution into the variable-volume buffer tank.

Abstract: The subject technology detects a code commit at a code repository. The subject technology sends a request for a build job to a build server. The subject technology determines that the build job is completed. The subject technology sends a training request and user token to a proxy authenticator. The subject technology determines determining that the user token is validated. The subject technology sends a training request and the user token to a training job manager. Further, the subject technology determines determining that the training job is completed.

Abstract: The present invention relates to the inspection process which includes providing access to the microdevice contacts, measuring the microdevice and analyzing the data to identify defects or performance of the micro device. The invention also relates to the forming of test electrodes on microdevices. The test electrodes may be connected to hidden contacts. The type of microdevices may be vertical, lateral or a flip chip.

Abstract: A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polymer layer over the surface of the substrate. The surface of the substrate includes an oxide containing portion and a nitride containing portion. A second RF signal is delivered to the electrode while continuously supplying the gas mixture at the continuous flow rate to selectively etch the oxide containing portion relative to the nitride containing portion.

Abstract: Disclosed herein are methods, systems, and apparatuses for an light emitting diode (LED) array apparatus. In some embodiments, the LED array apparatus may include a plurality of mesas etched from a layered epitaxial structure. The layered epitaxial structure may include a P-type doped semiconductor layer, a active layer, and an N-type doped semiconductor layer. The LED array apparatus may also include one or more regrowth semiconductor layers, including a first regrowth semiconductor layer, which may be grown epitaxially over etched facets of the plurality of mesas. In some cases, for each mesa, the first regrowth semiconductor layer may overlay etched facets of the P-type doped semiconductor layer, the active layer, and the N-type doped semiconductor layer, around an entire perimeter of the mesa.

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

Abstract: Disclosed herein are systems and methods for reducing surface recombination losses in micro-LEDs. In some embodiments, a method includes increasing a bandgap in an outer region of a semiconductor layer by implanting ions in the outer region of the semiconductor layer and subsequently annealing the outer region of the semiconductor layer to intermix the ions with atoms within the outer region of the semiconductor layer. The semiconductor layer includes an active light emitting layer. A light outcoupling surface of the semiconductor layer has a diameter that is less than twice an electron diffusion length of the semiconductor layer. The outer region of the semiconductor layer extends from an outer surface of the semiconductor layer to a central region of the semiconductor layer that is shaded by a mask during the implanting of the ions.