Abstract: Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

Abstract: Cognitive analysis using applied analog circuits including receiving, by a circuit, a first set of data results and a second set of data results; charging a first capacitor on the circuit with a first unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with a second unit of charge for each of the second set of data results that indicates a positive data point; applying a charge from the first capacitor and a charge from the second capacitor to an analog unit of the circuit; and generating a signal on a circuit output indicating that a ratio of the positive data points in the first set of data results to the positive data points in the second set of data results is greater than a statistical significance.

Abstract: Real time cognitive monitoring of correlations between variables including receiving, by a circuit, a first set of data results and a second set of data results, wherein each set of data results comprises binary data points; adding a unit of charge to a collection capacitor on the circuit for each of the first set of data results that indicates a positive data point; removing a unit of charge from the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the circuit if the charge on the collection capacitor exceeds a high charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance.

Abstract: Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

Abstract: A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuitry having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

Abstract: A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of the cell corresponds to respective states of the first transistor and the second transistor. The circuit further includes a first bitline coupled to the first transistor, where the first transistor is configured to apply a first voltage to the first bitline. The circuit includes a second bitline coupled to the second transistor, where the second transistor is configured to apply a second voltage to the second bitline. The circuit also includes a sense circuit configured to output, prior to programming of the complementary charge trap memory cell, a logical high signal or a logical low signal in response to the first voltage on the first bitline and the second voltage on the second bitline.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a plurality of data bits each corresponding to a binary indication of a test result; placing each of the plurality of data bits on an approximation circuit, wherein each of the data bits is placed on the approximation circuit by applying, to a first capacitor during a set time period, a voltage corresponding to the data bit, and wherein placing each of the plurality of data bits on the approximation circuit results in a resulting voltage stored on the first capacitor; and determining a potential correlation of the test results by comparing the resulting voltage to a voltage threshold.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.

Abstract: Big data analysis using low power circuit design including storing a plurality of data bits in a plurality of cells on a bitline of a dynamic random access memory (DRAM), wherein each data bit corresponds to a test result, and wherein each of the plurality of cells on the bitline is associated with a different wordline; precharging the bitline to a midpoint voltage between a low voltage corresponding to a low data bit and a high voltage corresponding to a high data bit; activating, at the same time, each wordline associated with each of the plurality of cells on the bitline, wherein activating each wordline causes a voltage to be applied to the bitline from each of the plurality of cells; and measuring a resulting voltage on the bitline to obtain a value corresponding to a percentage of the test results that indicate a passing test result.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.

Abstract: Generating a unique die identifier for an electronic chip including placing the electronic chip in an identifier generation state, wherein the electronic chip comprises a set of test circuits, wherein each of the set of test circuits is attached to a corresponding component on the electronic chip; obtaining an ordered list of race pairs of the set of test circuits; for each race pair in the ordered list of race pairs of the set of test circuits: selecting the race pair of test circuits; executing a race between the selected race pair; and adding an element to the unique die identifier based on an outcome of the executed race; and returning the electronic chip to an operational state.

Abstract: A method and circuit for implementing a hidden security key in Electronic Fuses (eFuses), and a design structure on which the subject circuit resides are provided. The circuit includes a race condition circuit coupled to a latching structure. The race condition circuit is characterized including respective driver strengths of each stage in the race as well as a sampling clock during chip testing. The data is used to store drive strengths for each stage in eFuses and is used to get a logical one or logical zero out of the final latching stage of the race condition circuit.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: Generating a unique die identifier for an electronic chip including placing the electronic chip in an identifier generation state, wherein the electronic chip comprises a set of test circuits, wherein each of the set of test circuits is attached to a corresponding component on the electronic chip; obtaining an ordered list of race pairs of the set of test circuits; for each race pair in the ordered list of race pairs of the set of test circuits: selecting the race pair of test circuits; executing a race between the selected race pair; and adding an element to the unique die identifier based on an outcome of the executed race; and returning the electronic chip to an operational state.

Abstract: A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuity having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

Abstract: A method and system are provided for implementing resistive defect performance mitigation for integrated circuits. A test is generated for identifying resistive defects. A first self heating repair process is performed for repairing resistive defects. Testing is performed to identify a mitigated resistive defect and a functional integrated circuit. Responsive to identifying a resistive defect not being mitigated and a functional integrated circuit, a second repair process is performed, then testing is performed again.

Abstract: A level-shifting latch circuit for coupling a first circuit in a first voltage domain with a second circuit in a second voltage domain, includes an input node to receive an input signal provided by the first circuit, and an output node to output a level-shifted signal, corresponding with the input signal. The level-shifting latch circuit also includes a first latch, having a first node and a second node, for storing the input signal in the first voltage domain, and a second latch, having a third node and a fourth node, for storing the input signal in the second voltage domain. In addition, the level-shifting circuit also includes a first switching element which provides a path to transfer a low voltage at the first node to the third node, and a second switching element which provides a path to transfer a low voltage at the second node to the fourth node.

Abstract: A method of making a semiconductor device in a gate first process with side gate assists. A first gate may be formed within a gate region. The first gate may include a first gate conductor separated from a semiconductor substrate by a first insulator disposed between the first gate conductor and the semiconductor substrate. A second gate may be formed within the gate region. The second gate may include a second gate conductor separated from a vertical surface of the first gate conductor and the semiconductor substrate by a second insulator. A first electrical contact and a second electrical contact may be formed. The first and second electrical contacts may be disposed on opposite ends of the gate region for respectively connecting the first gate conductor and the second gate conductor to a respective voltage.

Abstract: A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of the cell corresponds to respective states of the first transistor and the second transistor. The circuit further includes a first bitline coupled to the first transistor, where the first transistor is configured to apply a first voltage to the first bitline. The circuit includes a second bitline coupled to the second transistor, where the second transistor is configured to apply a second voltage to the second bitline. The circuit also includes a sense circuit configured to output, prior to programming of the complementary charge trap memory cell, a logical high signal or a logical low signal in response to the first voltage on the first bitline and the second voltage on the second bitline.