Abstract: Electronic apparatus, systems, and methods to construct and operate the electronic apparatus and/or systems include a memory unit configured to receive data flow from two directions. The memory unit can be configured serially in a chain with other memory units. The chain can include an error check and correcting unit (ECC). Additional apparatus, systems, and methods are disclosed.

Abstract: Some embodiments include apparatus and methods to prevent at least one of misidentifying and ignoring multiple-bit errors if the multiple-bit errors include a plurality of erroneous data bits that belong to only one specific group of a plurality of groups of data bits and if none of the other groups of the plurality of groups have errors.

Abstract: Memory system architectures, memory modules, processing systems and methods are disclosed. In various embodiments, a memory system architecture includes a source configured to communicate signals to a memory device. At least one memory cube may coupled to the source by a communications link having more than one communications path. The memory cube may include a memory device operably coupled to a routing switch that selectively communicates the signals between the source and the memory device.

Abstract: Apparatus and systems may include a first node group include a first network node coupled to a memory, the first network node including a first port, a second port, a processor port, and a hop port. Network node group may include a second network node coupled to a memory, the second network node including a first port, a second port, a processor port, and a hop port, the hop port of the second network node coupled to the hop port of the first network node and configured to communicate between the first network node and the second network node. Network node group may include a processor coupled to the processor port of the first network node and coupled to the processor port of the second network node, the processor configured to access the first memory through the first network node and the second memory through the second network node. Other apparatus, systems, and methods are disclosed.

Abstract: Some embodiments include apparatus and methods to prevent at least one of misidentifying and ignoring multiple-bit errors if the multiple-bit errors include a plurality of erroneous data bits that belong to only one specific group of a plurality of groups of data bits and if none of the other groups of the plurality of groups have errors.

Abstract: A plurality of columns for a check matrix that implements a distance d linear error correcting code are populated by providing a set of vectors from which to populate the columns, and applying to the set of vectors a filter operation that reduces the set by eliminating therefrom all vectors that would, if used to populate the columns, prevent the check matrix from satisfying a column-wise linear independence requirement associated with check matrices of distance d linear codes. One of the vectors from the reduced set may then be selected to populate one of the columns. The filtering and selecting repeats iteratively until either all of the columns are populated or the number of currently unpopulated columns exceeds the number of vectors in the reduced set. Columns for the check matrix may be processed to reduce the amount of logic needed to implement the check matrix in circuit logic.

Abstract: Apparatus and systems may include a first node group include a first network node coupled to a memory, the first network node including a first port, a second port, a processor port, and a hop port. Network node group may include a second network node coupled to a memory, the second network node including a first port, a second port, a processor port, and a hop port, the hop port of the second network node coupled to the hop port of the first network node and configured to communicate between the first network node and the second network node. Network node group may include a processor coupled to the processor port of the first network node and coupled to the processor port of the second network node, the processor configured to access the first memory through the first network node and the second memory through the second network node. Other apparatus, systems, and methods are disclosed.

Abstract: Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.

Abstract: Some embodiments include apparatus and methods to prevent at least one of misidentifying and ignoring multiple-bit errors if the multiple-bit errors include a plurality of erroneous data bits that belong to only one specific group of a plurality of groups of data bits and if none of the other groups of the plurality of groups have errors.

Abstract: Electronic apparatus, systems, and methods to construct and operate the electronic apparatus and/or systems include a memory unit configured to receive data flow from two directions. The memory unit can be configured serially in a chain with other memory units. The chain can include an error check and correcting unit (ECC). Additional apparatus, systems, and methods are disclosed.

Abstract: A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.

Abstract: A memory controller and method that provide a read-refresh (also called “distributed-refresh”) mode of operation, in which every row of memory is read within the refresh-rate requirements of the memory parts, with data from different columns within the rows being read on subsequent read-refresh cycles until all rows for each and every column address have been read, scrubbing errors if found, thus providing a scrubbing function that is integrated into the read-refresh operation, rather than being an independent operation. For scrubbing, an atomic read-correct-write operation is scheduled. A variable-priority, variable-timing refresh interval is described. An integrated card self-tester and/or card reciprocal-tester is described. A memory bit-swapping-within-address-range circuit, and a method and apparatus for bit swapping on the fly and testing are described.

Abstract: Some embodiments include apparatus and methods to prevent at least one of misidentifying and ignoring multiple-bit errors if the multiple-bit errors include a plurality of erroneous data bits that belong to only one specific group of a plurality of groups of data bits and if none of the other groups of the plurality of groups have errors.

Abstract: Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.

Abstract: Systems and methods for controlling memory access operations are disclosed. The system may include one or more requestors performing requests to memory devices. Within a memory controller, a request queue receives requests from a requestor, a bank decoder determines a destination bank, and the request is placed in an appropriate bank queue. An ordering unit determines if the current request can be reordered relative to the received order and generates a new memory cycle order based on the reordering determination. The reordering may be based on whether there are multiple requests to the same memory page, multiple reads, or multiple writes. A memory interface executes each memory request in the memory cycle order. A data buffer holds write data until it is written to the memory and read data until it is returned to the requestor. The data buffer also may hold memory words used in read-modify-write operations.

Abstract: Semiconductor devices comprising at least one voltage sensor for sensing an operating voltage associated with an operational circuit of the semiconductor device. The at least one voltage sensor is configured to generate a signal indicative of a state of the operating voltage. Methods of monitoring a voltage in a semiconductor device include determining a magnitude of an operating voltage for an operational circuit in a semiconductor device. A signal may be generated indicating a state of the operating voltage.

Abstract: A memory daughter card (MDC) is described, having a very high-speed serial interface and an on-card MDC test engine that allows one MDC to be directly connected to another MDC for testing purposes. In some embodiments, a control interface allows the test engine to be programmed and controlled by a test controller on a test fixture that allows simultaneous testing of a single MDC or one or more pairs of MDCs, one MDC in a pair (e.g., the “golden” MDC) testing the other MDC of that pair. Other methods are also described, wherein one MDC executes a series of reads and writes and other commands to another MDC to test at least some of the other card's functions, or wherein one port executes a series of test commands to another port on the same MDC to test at least some of the card's functions.

Abstract: Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an error recovery device at an end of the chain. In one configuration shown, the serial chain of memory devices includes a chain of devices where each device is a stacked die memory device. Methods are described that show using the error recovery device in write operations and data recovery operations.

Abstract: Methods, apparatuses and systems are disclosed involving a memory device. In one embodiment, a memory device is disclosed that includes a command error module of the memory device operably coupled to at least one of a command signal and an address signal and configured to detect and report a parity error on the command signal, the address signal, or combinations thereof In some embodiments, a memory device may include a temperature sensor operably coupled to a mode register. The temperature sensor may be configured to sense a device temperature and report a temperature status. Furthermore, the memory device may be incorporated into a memory module, which may be included in an electronic system.

Abstract: Memory devices and methods are described that include serially chained memory devices. In one or more of the configurations shown, a serial chain of memory devices includes a number of memory devices, and an error recovery device at an end of the chain. In one configuration shown, the serial chain of memory devices includes a chain of devices where each device is a stacked die memory device. Methods are described that show using the error recovery device in write operations and data recovery operations.