Abstract: A memory cell 36 within an integrated circuit memory is provided with an access controller 32 coupled to a first pass gate 38 and a second pass gate 40. During a write access to the memory cell 38 both the first pass gate 38 and the second pass gate 40 are opened. During a read access, the first pass gate 38 is opened and the second pass gate 40 is closed. This asymmetry in the read and write operations permits an asymmetry in the gates forming the memory cell 36 thereby permitting changes to increase both read robustness and write robustness. The asymmetry in the design parameters of different gates can take the form of varying the gate length, the gate width and the threshold voltage so as to vary the conductance of different gates to suit their individual role within the memory cell 36 which is operating in the asymmetric manner provided by the separate word line signals driving read operations and write operations.

Abstract: An integrated circuit memory 2 is provided with an array of memory cells 4 and power supply circuitry 10, 12. Detected operating errors in malfunctioning memory cells 14 are identified using a built-in-self-test controller 34. The power supply circuitry 10, 12 is then configured to alter the voltage supply to the malfunctioning memory cells 14 in an attempt to correct their operation. The voltage supply of the row containing the malfunctioning memory cell and the column containing the malfunctioning memory cell may both be altered. The voltage alteration may be an increase or a decrease in voltage supply depending upon the nature of the malfunction detected.

Abstract: An apparatus for processing data 2 is provided with a time-to-digital converter 18 which serves to measure signal processing delay through one or more signal paths through a processing stage. This measured delay generates a delay value representing a plurality of instances of the signal processing delay which have been measured. Analysis is performed under software control to estimate a worst case signal processing delay through the processing stage based upon the delay values which have been generated. An adjustment of the operating parameters, such as supply voltage and clock frequency, of the apparatus is made to provide a timing margin through the processing stage sufficient to satisfy the worst case signal processing delay which has been estimated without an excessive margin.

Abstract: Crossbar circuitry, and a method of operation of such crossbar circuitry, are provided. The crossbar circuitry has an array of data input paths and data output paths where the data output paths are transverse to the data input paths. At each intersection between a data input path and a data output path, a crossbar cell is provided that comprises a storage circuit programmable to store a routing value, and a transmission circuit. In a transmission mode of operation the transmission circuit is responsive to the routing value indicating that the data input path should be coupled to the data output path to detect the data input along the data input path, and to output an indication of that data on the data output path at the associated intersection. Control circuitry is used to issue control signals to the crossbar cells, and during a configuration mode of operation the control circuitry re-utilises at least one of the data output paths to program the storage circuitry of one or more of the crossbar cells.

Abstract: Crossbar circuitry, and a method of operation of such crossbar circuitry, are provided. The crossbar circuitry has an array of data input paths and data output paths where the data output paths are transverse to the data input paths. At each intersection between a data input path and a data output path, a crossbar cell is provided that comprises a configuration storage circuit programmable to store a routing value, a transmission circuit, and an arbitration circuit. In a transmission mode of operation, the transmission circuit is responsive to the routing value being a first value, indicating that the data input path should be coupled to the data output path, to detect the data input along the data input path, and to output an indication of that data on the data output path at the associated intersection.

Abstract: An isolation circuitry and method are provided for coupling between a power supply and processing circuitry in order to provide power to the processing circuitry whilst hiding a power consumption characteristic of that processing circuitry. The isolation circuitry comprises a plurality of sub-circuits, with each sub-circuit comprising a capacitor, a first switch configured to provide a first connection between the capacitor and the power supply, a second switch configured to provide a second connection between the capacitor and the processing circuitry, and a third switch configured to provide a third connection across the capacitor to partially discharge the capacitor. Control circuitry controls the plurality of sub-circuits, such that within each sub-circuit the first switch, second switch and third switch are placed in an active state in a repeating sequence.

Abstract: An integrated circuit 2 has a specified range of runtime-variable operating parameters. Data processing circuits 4 within the integrated circuit 2 have associated error detection and error repair mechanisms 6. When operating within a narrow typical-case range of runtime-variable operating parameters the data processing circuits 4 operate correctly and substantially without error. When operating outside of this typical-case range but inside the specified range of permitted values for the run-time variable operating parameters, then the error detection and error repair circuit 6 operate to repair the errors which occur.

Abstract: An integrated circuit includes a plurality of processing stages each including processing logic 1014, a non-delayed signal-capture element 1016, a delayed signal-capture element 1018 and a comparator 1024. The non-delayed signal-capture element 1016 captures an output from the processing logic 1014 at a non-delayed capture time. At a later delayed capture time, the delayed signal-capture element 1018 also captures a value from the processing logic 1014. An error detection circuit 1026 and error correction circuit 1028 detect and correct random errors in the delayed value and supplies an error-checked delayed value to the comparator 1024. The comparator 1024 compares the error-checked delayed value and the non-delayed value and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the error-checked delayed value.

Abstract: An integrated circuit includes a plurality of processing stages each including processing logic 2, a non-delayed latch 4, a delayed latch 8 and a comparator 6. The non-delayed latch 4 captures an output from the processing logic 2 at a non-delayed capture time. At a later delayed capture time, the delayed latch 8 also captures a value from the processing logic 2. The comparator 6 compares these values and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the delayed value. The non-delayed value is passed to the subsequent processing stage immediately following its capture and accordingly error recovery mechanisms are used to suppress the erroneous processing which has occurred by the subsequent processing stages, such as gating the clock and allowing the correct signal values to propagate through the subsequent processing logic before restarting the clock.

Abstract: A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, whilst the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack comprises at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. During a programming operation, a voltage difference is established between the first programming terminal and the second programming terminal to cause charge tunnelling to occur through the tunnelling capacitor, such that after the programming operation a charge is stored in the floating gate node.

Abstract: A data processing apparatus is provided having a cache memory comprising a data storage array and a tag array and a cache controller coupled to the cache memory responsive to a cache access request from processing circuitry to perform cache look ups. The cache memory is arranged such that it has a first memory cell group configured to operate in a first voltage domain and a second memory cell group configured to operate in a second voltage domain that is different from the first voltage domain. A corresponding data processing method is also provided.

Abstract: An integrated circuit (100) is provided with power regulating circuitry (104) serving to actively regulate the voltage difference between a first power supply rail Vdd and a second power rail Vss being used to supply electrical power to processing circuitry (102). A voltage regulating capacitor Ca has one terminal connected to the first power rail Vdd and a second terminal selectively connected to either the second power rail Vss or a third power rail Vdda. Should a voltage undershoot be detected by voltage sensing circuitry 106, then the capacitor Ca is connected to the third power rail Vdda so as to dump at least part of charge Ca, Vdda in capacitor Ca onto the first power rail Vdd and resist the voltage drop. During normal operation, charge is accumulated into the capacitor Ca. An additional load device T2 is provided to lower the voltage difference should an overshoot be detected.

Abstract: A circuit for generating a random output value is disclosed that comprises: a bistable circuit having two stable states in which a 0 or a 1 is output and having a balanced metastable state in which a floating value between 0 and 1 is output, said bistable circuit resolving from said metastable state to one of said stable states on being switched on, said state depending on a voltage level at a port on said bistable circuit; a voltage level control circuit for controlling a voltage level at said port on said bistable circuit; a time measuring circuit for measuring a switching time taken for said bistable circuit to switch from said metastable state to one of said stable states following switch on; and control logic for controlling said time measuring circuit, said voltage level control circuit and a switching off and on of said bistable circuit, said control logic being adapted to perform a following sequence: control said voltage level control circuit to set a predetermined voltage level at said port on said

Abstract: An integrated circuit includes a plurality of processing stages each including processing logic 1014, a non-delayed signal-capture element 1016, a delayed signal-capture element 1018 and a comparator 1024. The non-delayed signal-capture element 1016 captures an output from the processing logic 1014 at a non-delayed capture time. At a later delayed capture time, the delayed signal-capture element 1018 also captures a value from the processing logic 1014. An error detection circuit 1026 and error correction circuit 1028 detect and correct random errors in the delayed value and supplies an error-checked delayed value to the comparator 1024. The comparator 1024 compares the error-checked delayed value and the non-delayed value and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the error-checked delayed value.

Abstract: An integrated circuit having a plurality of processing stages includes a low power mode controller operable to control the integrated circuit to switch between an operational mode and a standby mode. At least one of the processing stages has a non-delayed latch to capture a non-delayed value of an output signal from that processing stage and a delayed latch operable during the operational mode to capture a delayed value of the same signal. A difference between these two captured signals is indicative of the processing operation not being completed at the time the non-delayed signal was captured. The delayed latch is operable during the standby mode to retain the signal it captured whilst the non-delayed latch is powered down and loses its value. The delayed latch is formed to have a lower power consumption than the non-delayed latch.

Abstract: An integrated circuit includes a plurality of processing stages each including processing logic 2, a non-delayed latch 4, a delayed latch 8 and a comparator 6. The non-delayed latch 4 captures an output from the processing logic 2 at a non-delayed capture time. At a later delayed capture time, the delayed latch 8 also captures a value from the processing logic 2. The comparator 6 compares these values and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the delayed value. The non-delayed value is passed to the subsequent processing stage immediately following its capture and accordingly error recovery mechanisms are used to suppress the erroneous processing which has occurred by the subsequent processing stages, such as gating the clock and allowing the correct signal values to propagate through the subsequent processing logic before restarting the clock.

Abstract: A signal capture element for providing a first pre-charged logic level as first and second interim address portion signals during a pre-charged period and outputting during an evaluate period an address portion logic level as the first interim address portion signal and an inverted address portion logic level as the second interim address portion signal. First and second address portion signals are derivable respectively from first and second interim address portion signals. An inverter circuit for outputting to an address decoder during a pre-charged period a second pre-charged logic level as the first and second address portion signals. The inverter circuit having transfer characteristics that maintain voltage levels such that the first and second address portion signals are interpreted to be at the second pre-charged logic level despite the first or second interim address portion signal failing to transition to a valid logic level during the evaluate period.

Abstract: An integrated circuit includes a plurality of processing stages each including processing logic 1014, a non-delayed signal-capture element 1016, a delayed signal-capture element 1018 and a comparator 1024. The non-delayed signal-capture element 1016 captures an output from the processing logic 1014 at a non-delayed capture time. At a later delayed capture time, the delayed signal-capture element 1018 also captures a value from the processing logic 1014. An error detection circuit 1026 and error correction circuit 1028 detect and correct random errors in the delayed value and supplies an error-checked delayed value to the comparator 1024. The comparator 1024 compares the error-checked delayed value and the non-delayed value and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the error-checked delayed value.

Abstract: There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism; a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.

Abstract: There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said, fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.