Abstract: An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.

Abstract: Provided is a micro-electromechanical assembly including an out-of-plane device formed on a device layer of a single crystal silicon substrate. A ribbon structure is formed on the device layer, where the ribbon structure has at least one of a width or depth, which is less than the width or depth of the out-of-plane device. A connection interface provides a connection point between a first end of the out-of-plane device and a first end of a ribbon structure, wherein the ribbon structure and out-of-plane device are integrated as a single piece.

Abstract: A micro-electromechanical system assembly is designed to integrate a laser. More particularly, laser is a vertical cavity surface-emitting laser. The MEMS assembly includes a micro-electromechanical substrate having an upper surface and a lower surface, the upper surface defined as having a first area and a second area. A first substrate bonding pad is positioned on the upper surface at a location within the first area, and a second substrate bonding pad is positioned on the upper surface at a location within the second area. Deposited upon the first and second substrate bonding areas are respective first and second solder material. A laser to be integrated in the MEMS assembly has a first laser bonding pad located on a first side, and a second laser bonding pad located on a second side. The laser is placed between the first substrate bonding pad and second substrate bonding pad such that they align with the respective first and second laser bonding pads.

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

Abstract: A MEMS-based adjustable mirror module allows faster, lower cost, and easier alignment of optical fibers in substrates. Movable mirrors formed on the substrate allow adjustment of the light path after the optical fiber is attached, after which the mirrors are affixed in place to prevent misalignment.

Abstract: A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser.

Abstract: A highly compact laser scanner with no moving parts includes a vertical cavity surface emitting laser (VCSEL). A microlens is mounted directly to the light emitting surface of the VCSEL via flip chip bonding. The VCSEL array may be one or two dimensional. The laser array may be used in a variety of applications including free space optical communications.

Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract: Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

Abstract: A micro-optical-electrical-mechanical laser scanner is configured from a silicon-on-insulator substrate having a silicon substrate layer, a buried oxide layer, and a single crystal silicon device layer. A first device layer portion having a micro-mirror fabricated therefrom. A laser is connected to a second device layer portion, and a hinge connects the first device layer portion and the second device layer portion. The hinge is formed with a bimorph material, wherein the bimorph material creates built-in stresses in the hinge. The bimorph hinge moves the released micro-mirror out of the horizontal plane to a position for either directly or indirectly reflecting laser light emitted from the laser.

Abstract: An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.

Abstract: A MEMS-based adjustable mirror module allows faster, lower cost, and easier alignment of optical fibers in substrates. Movable mirrors formed on the substrate allow adjustment of the light path after the optical fiber is attached, after which the mirrors are affixed in place to prevent misalignment.

Abstract: A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.

Abstract: A microlens switching assembly and a method for optical switching uses a microlens switching assembly. The microlens switching assembly uses a microelectromechanical system-based comb drive, or other drive mechanism, to move a microlens or microlens array in a direction perpendicular to the optical axis to switch a signal between a signal source and a signal receiver. The microlens is carried by a support member that is suspended from a substrate by a pair of folded springs. This allows the microlens to be moved rapidly to provide fast switching. The signal source and the signal receiver may be optical fibers or a laser source and one or more photodetectors. In the case of optical fibers, the switching provided by the microlens switching assembly and method may be an attenuation of the signal that is received by an output optical fiber.

Abstract: A micro-optical-electrical-mechanical laser scanner is configured from a silicon-on-insulator substrate having a silicon substrate layer, a buried oxide layer, and a single crystal silicon device layer. A first device layer portion having a micro-mirror fabricated therefrom. A laser is connected to a second device layer portion, and a hinge connects the first device layer portion and the second device layer portion. The hinge is formed with a bimorph material, wherein the bimorph material creates built-in stresses in the hinge. The bimorph hinge moves the released micro-mirror out of the horizontal plane to a position for either directly or indirectly reflecting laser light emitted from the laser.

Abstract: Provided is a ribbon structure which may be used as part of a micro-assembly including a micro-device formed on or in a device layer of a single crystal silicon substrate. The ribbon structure is also formed in the device layer, where the ribbon structure is thinned to a thickness less than the thickness of the micro-device. The ribbon structure has an electrical conductive material deposited on its surface. When implemented as part of the micro-assembly, a first end of the micro-device and a first end of a ribbon structure are interconnected, wherein the ribbon structure and out-of-plane device are formed as a single piece.

Abstract: Provided is a micro-electromechanical assembly including an out-of-plane device formed on a device layer of a single crystal silicon substrate. A ribbon structure is formed on the device layer, where the ribbon structure has at least one of a width or depth, which is less than the width or depth of the out-of-plane device. A connection interface provides a connection point between a first end of the out-of-plane device and a first end of a ribbon structure, wherein the ribbon structure and out-of-plane device are integrated as a single piece.

Abstract: A light-producing device integrated with a power monitoring system include a light-producing device from which light is emitted in wavelengths that can range from approximately 700 nm to approximately 3 microns. A semi-transparent sensor is located such that at least a portion of the light emitted passes through the semi-transparent sensor and at least a portion of light is absorbed by the semi-transparent sensor. The semi-transparent sensor is configured to be semi-transparent at wavelengths that can range from 700 nm to 3 microns. The semi-transparent sensor may also be used with an external light source, for example with fiber-optic cables.