Patents by Inventor Decai Sun

Decai Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Independently addressable semiconductor laser arrays with buried selectively oxidized native oxide apertures
    Patent number: 5917847
    Abstract: The present invention provides a independently addressable, high density, edge emitting laser array structure formed by a lateral wet oxidation process. The aperture of the laser structure is formed by selective layer intermixing and lateral wet oxidation from adjacent grooves etched in the laser structure.
    Type: Grant
    Filed: September 26, 1997
    Date of Patent: June 29, 1999
    Assignee: Xerox Corporation
    Inventor: Decai Sun
  • Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation
    Patent number: 5915165
    Abstract: The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture which directs the current path within the laser. Specifically, the oxide regions surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
    Type: Grant
    Filed: December 15, 1997
    Date of Patent: June 22, 1999
    Assignee: Xerox Corporation
    Inventors: Decai Sun, Philip D. Floyd
  • Edge-emitting semiconductor lasers
    Patent number: 5886370
    Abstract: The present invention relates to a laser with accurately defined and controlled oxide regions which provide electrical and optical confinement to the laser. Specifically, the oxide regions are formed by a pre-oxidation layer disordering process which defines the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
    Type: Grant
    Filed: May 29, 1997
    Date of Patent: March 23, 1999
    Assignee: Xerox Corporation
    Inventors: Decai Sun, Philip D. Floyd
  • Polarization mode selection by distributed Bragg reflector in a quantum well laser
    Patent number: 5784399
    Abstract: In a quantum well semiconductor laser structure, a distributed Bragg reflector is used to select the polarization mode of the emitted light beam. The period of the distributed Bragg reflector matches the peak gain of one polarization mode providing optical feedback for that mode to be the light emitted. The distributed Bragg reflector can extend along the length of the active layer within the semiconductor structure or extend at one end of the active layer external to the semiconductor structure.
    Type: Grant
    Filed: December 19, 1996
    Date of Patent: July 21, 1998
    Assignee: Xerox Corporation
    Inventor: Decai Sun