Abstract: A vertical cavity apparatus includes a die with a top surface and a plurality of planar electrically conducting layers. At least one of the layers is an oxide layer formed of an oxidizable material that is oxidized upon exposure to an oxidizing agent to convert the oxidizable material to an electrical insulator. A plurality of oxide apertures are formed by via holes connecting the top surface to the oxide layer. A majority of the individual oxide apertures have different sizes. An optoelectronic device is coupled to a single oxide aperture in the die.

Abstract: A microelectromechanically tunable Fabry-Perot spectrophotometer is provided for color sensing. Optical fiber provides light input to a Fabry-Perot filter which is adjusted by a switched capacitor circuit. Spectral intensity is sensed by an integrated photodetector.

Abstract: A micromachined movable shuttle is constructed in III-V material to allow in situ placement of VCSELs on the shuttle for a solid state image scanner in optical display and printing applications. A comb drive is used to actuate the shuttle for scanning purposes. Hundreds of VCSELs may be fabricated on a large movable shuttle.

Abstract: A micro-electromechanical bistable shutter display device is provided capable of being implemented for both small screen, high resolution devices and for large billboard-type displays. The micro-electromechanical shutter assembly has bi-stability characteristics which allow the use of only a holding voltage to maintain an image. The micro-electromechanical shutter assembly includes a shutter having petal-like shutter segments covering reflective or transmittive films. To expose the film in a particular shutter assembly, its shutter segments are moved from the horizontal to a vertical position using electrostatic attraction forces to “collapse” the torsionally-hinged shutter segments. The shutter assembly can have a number of segments, as long as the resulting shutter assembly shape can be stacked to form a dense 2D array.

Abstract: An annular metal layer is provided between a conductive oxide layer and a dielectric mirror in a vertical cavity surface emitting laser. The annular metal layer defines the output window for the laser cavity which matches the TEM00 fundamental mode of the light beam emitted by the active region of the VCSEL. The metal layer outside the output window provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.

Abstract: A first, thicker, annular gallium arsenide semiconductor layer surrounds a second, thinner, circular gallium arsenide semiconductor layer in a vertical cavity surface emitting laser. The thinner circular gallium arsenide layer defines the output window for the laser cavity which matches the TEM.sub.00 fundamental mode of the light beam emitted by the active region of the VCSEL. The thicker annular gallium arsenide layer outside the output window of the thinner circular gallium arsenide layer provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

Abstract: This invention relates to a multiple wavelength laser structure, and more particularly, to a multiple wavelength laser array structure fabricated by flip-chip bonding from laser structures on two different substrates. A side by side red/IR laser structure is flip-chip bonded to a blue laser structure to form a red/blue/IR hybrid integrated laser structure.

Abstract: A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.

Abstract: A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

Abstract: A micro-machined movable microlens assembly is formed on undoped or pure a semiconductor substrate. The movable microlens assemblies are to be actuated using force generators which cause various mechanical degrees of freedom depending upon the type of stage suspension and actuation used.

Abstract: A full-color, tunable organic light emitting diode (RCOLED) includes a high-reflection tunable membrane and a high-reflection dielectric mirror that form a resonant cavity. A white light OLED is located in the resonant cavity. The high-reflection tunable membrane is moved to alter the resonant cavity length, and/or tilted/bowed to change the finesse of the resonant cavity. In this way, color, brightness and color saturation of the emitted light from the RCOLED can be tuned. The RCOLED may also include a microlens structure to improve off-axis viewing.

Abstract: A monolithic laser structure has an infrared laser structure side by side with a red laser structure. The infrared and red laser structures share the same substrate and have the same material for the cladding layers and for the cap and barrier reduction layers. The red and infrared laser structures can have native oxide confined or metal confined ridge waveguides.

Abstract: A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.

Abstract: The present invention provides a high density, edge emitting laser array structure formed by a wet oxidation process. Native oxide layers formed in adjacent grooves in the p-cladding layer Al-based alloy of the laser array structure provide both optical confinement to achieve single transverse mode operation and for electrical isolation to allow each laser diode to be independently addressable.

Abstract: A ridge waveguide semiconductor laser structure fabricated by etching and wet oxidation. The upper cladding layer is partially etched forming a ridge and a native oxide layer is wet oxidized from the remaining upper cladding layer and the active region outside the ridge. The deep native oxide layer provides strong optical confinement to the ridge waveguide. Alternately, the active region can be narrower than the ridge waveguide in the laser structure. The ridge waveguide semiconductor laser structures with native oxide layers can also be curved geometry lasers such as ring lasers.

Abstract: An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.

Abstract: A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.

Abstract: A monolithic laser structure has an infrared laser structure stacked on top of a red laser structure. An ion implantation channel from the substrate of the infrared laser structure to the lower cladding layer of the red laser structure lets both laser structures use a common electrode on the substrate of the red laser structure. A portion of the monolithic structure is etched down to the red laser structure for the electrode of the red laser structure. The monolithic laser structure has a red and infrared side by side array from the two stacked red and infrared laser structures. The red and infrared laser structures can each have native oxide confined ridge waveguides.