Patents by Inventor Deepak Chandra

Deepak Chandra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734388
    Abstract: Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: August 4, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Kamal M. Karda, Si-Woo Lee, Haitao Liu, Deepak Chandra Pandey
  • Publication number: 20200227417
    Abstract: Some embodiments include an integrated assembly having an active-region-pillar extending upwardly from a base. The active-region-pillar includes a digit-line-contact-region between a first storage-element-contact-region and a second storage-element-contact-region. A threshold-voltage-inducing-structure is adjacent a lower portion of the active-region-pillar. A first channel region includes a first portion of the active-region-pillar between the digit-line-contact-region and the first storage-element-contact-region. A second channel region includes a second portion of the active-region-pillar between the digit-line-contact-region and the second storage-element-contact-region. A first wordline is adjacent the first portion of the active-region-pillar. A second wordline is adjacent the second portion of the active-region-pillar. A digit-line is coupled with the digit-line-contact-region. First and second storage-elements are coupled with the first and second storage-element-contact-regions.
    Type: Application
    Filed: January 15, 2019
    Publication date: July 16, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Kamal M. Karda, Si-Woo Lee, Haitao Liu, Deepak Chandra Pandey
  • Patent number: 10713585
    Abstract: Systems and techniques are provided for template exploration in a large-scale machine learning system. A method may include obtaining multiple base templates, each base template comprising multiple features. A template performance score may be obtained for each base template and a first base template may be selected from among the multiple base templates based on the template performance score of the first base template. Multiple cross-templates may be constructed by generating a cross-template of the selected first base template and each of the multiple base templates. Performance of a machine learning model may be tested based on each cross-template to generate a cross-template performance score for each of the cross-templates. A first cross-template may be selected from among the multiple cross-templates based on the cross-template performance score of the cross-template. Accordingly, the first cross-template may be added to the machine learning model.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: July 14, 2020
    Assignee: Google LLC
    Inventors: Tal Shaked, Tushar Deepak Chandra, James Vincent McFadden, Yoram Singer, Tze Way Eugene Ie
  • Publication number: 20200211644
    Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.
    Type: Application
    Filed: February 20, 2020
    Publication date: July 2, 2020
    Inventors: Deepak Chandra SEKAR, Wayne Frederick ELLIS, Brent Steven HAUKNESS, Gary Bela BRONNER, Thomas VOGELSANG
  • Patent number: 10681979
    Abstract: An extending hanger assembly, for a wardrobe system having an enclosure and a door pivotable between open and closed positions, includes: a base on which an article support peg is mounted for linear translation; a mechanism operative to move the article support peg linearly relative to the base; and a control link coupling the door to the mechanism, whereby, upon opening and closing of the door, the control link operates the mechanism to translate the article support peg in opposing linear directions. The mechanism operative to move the article support peg linearly relative to the base can be a scissor mechanism having a proximal end extending toward the door and a distal end extending away from the door, wherein the distal end is attached to the base, and the proximal end is attached to a traveling bracket that carries the article support peg.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: June 16, 2020
    Assignee: B/E Aerospace, Inc.
    Inventors: Umesh B. Shingne, Deepak Chandra Kokkalla, Ian L. Frost
  • Publication number: 20200178077
    Abstract: A system for implicit authentication for a mobile device associated with a user, wherein the implicit authentication is behavioral, biometric and task-based and includes at least one authentication task selected so as to leverage the user's muscle memory. The mobile device comprises a touchscreen; a transaction authentication information unit; one or more sensors coupled to the transaction authentication information unit; and an anomaly detector coupled to the transaction authentication information unit. The sensors comprise one or more touchscreen sensors coupled to the touchscreen, an accelerometer, and a gyroscope, and are used to obtain and transmit one or more sets of data to the transaction authentication information unit. The sets of data are associated with one or more performances of the authentication task by the user. The anomaly detector generates an authentication model using the one or more data sets transmitted to the transaction authentication information unit.
    Type: Application
    Filed: February 3, 2020
    Publication date: June 4, 2020
    Inventors: Deepak Chandra DUTT, Anil Buntwal SOMAYAJI, Michael John Kendal BINGHAM
  • Publication number: 20200162493
    Abstract: An authentication method for use in a device and comprises monitoring a program behavior stream comprising a plurality of program observables that comprises a program observable. The method records the program observable and matches the recorded first program observable to a program model selected from a plurality of program models stored within a program store. A user model is selected from a plurality of user models stored within a user store corresponding to the program model. A user behavior stream corresponding to the program observable is monitored and a user observable contained in the user behavior stream is recorded. The user observable is correlated to the user model and an authentication state associated with the device is determined based on the correlating.
    Type: Application
    Filed: December 27, 2019
    Publication date: May 21, 2020
    Inventors: Deepak Chandra DUTT, Anil Buntwal SOMAYAJI, Michael John Kendal BINGHAM
  • Patent number: 10658037
    Abstract: A memory device may include a local bit line electrically coupled to a plurality of memory cells and a global bit line electrically coupled to the local bit line through first and second selectable parallel paths having first and second impedances, respectively. The first path may be active and the second path may be in an off state in at least one of a set operation or a forming operation. The second path may be active in a reset operation, wherein the second impedance of the second path has a lower impedance than the first impedance of the first path.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: May 19, 2020
    Assignee: Rambus Inc.
    Inventors: Deepak Chandra Sekar, Brent S. Haukness, Bruce L. Bateman
  • Publication number: 20200151614
    Abstract: Systems and techniques are provided for template exploration in a large-scale machine learning system. A method may include obtaining multiple base templates, each base template comprising multiple features. A template performance score may be obtained for each base template and a first base template may be selected from among the multiple base templates based on the template performance score of the first base template. Multiple cross-templates may be constructed by generating a cross-template of the selected first base template and each of the multiple base templates. Performance of a machine learning model may be tested based on each cross-template to generate a cross-template performance score for each of the cross-templates. A first cross-template may be selected from among the multiple cross-templates based on the cross-template performance score of the cross-template. Accordingly, the first cross-template may be added to the machine learning model.
    Type: Application
    Filed: December 16, 2013
    Publication date: May 14, 2020
    Applicant: Google Inc.
    Inventors: Tal Shaked, Tushar Deepak Chandra, James Vincent McFadden, Yoram Singer, Tze Way Eugene Ie
  • Publication number: 20200150735
    Abstract: This document describes techniques (400, 500, 600) and apparatuses (100, 700) for implementing sensor-based near-field communication (NFC) authentication. These techniques (400, 500, 600) and apparatuses (100, 700) enable a computing device (102) to detect, in a low-power state, environmental variances indicating proximity with an NFC-enabled device (104) with which to authenticate. In some embodiments, various components of a computing device (102) in a sleep state are activated to process environmental variance(s), perform authentication operations, and/or an indicate initiation of authentication operations to a user.
    Type: Application
    Filed: January 15, 2020
    Publication date: May 14, 2020
    Applicant: Google Technology Holdings LLC
    Inventors: Jagadish Kumar Agrawal, Deepak Chandra, John J. Gorsica, Jagatkumar V. Shah
  • Publication number: 20200145621
    Abstract: An imaging system that includes a camera mounted on an aerial platform, for example a balloon, allows a user to increase the longevity of the camera's battery by remote control. A user may capture imagery at a time scale of interest and desired power consumption by adjusting parameters for image capture by the camera. A user may adjust a time to capture an image, a time to capture a video, or a number of cycles per time period to capture one or more images as the aerial platform moves in a region of interest to change power consumption for imaging. The system also provides imaging alignment to account for unwanted movement of the aerial platform when moved in the region of interest. Additionally, a mounting device is provided that is simple and inexpensive, and that allows a camera to remain positioned in a desired position relative to the ground.
    Type: Application
    Filed: December 31, 2019
    Publication date: May 7, 2020
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Ranveer Chandra, Manohar Swaminathan, Vasuki Narasimha Swamy, Zerina Kapetanovic, Deepak Vasisht, Akshit Kumar, Anirudh Badam, Gireeja Ranade, Sudipta Sinha, Rohit Patil
  • Patent number: 10643906
    Abstract: An embodiment of the invention comprises a method of forming a transistor comprising forming a gate construction having an elevationally-outermost surface of conductive gate material that is lower than an elevationally-outer surface of semiconductor material that is aside and above both sides of the gate construction. Tops of the semiconductor material and the conductive gate material are covered with masking material, two pairs of two opposing sidewall surfaces of the semiconductor material are laterally exposed above both of the sides of the gate construction. After the covering, the semiconductor material that is above both of the sides of the gate construction is subjected to monolayer doping through each of the laterally-exposed two opposing sidewall surfaces of each of the two pairs and forming there-from doped source/drain regions above both of the sides of the gate construction.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: May 5, 2020
    Assignee: Micron Technology, Inc.
    Inventors: David K. Hwang, John A. Smythe, Haitao Liu, Richard J. Hill, Deepak Chandra Pandey
  • Patent number: 10644005
    Abstract: Some embodiments include a transistor having a semiconductor material with a trench extending downwardly therein. The semiconductor material has a first post region on one side of the trench and a second post region on an opposing side of the trench. The semiconductor material has a narrow fin region along the bottom of the trench and extending between the first and second post regions. Each of the first and second post regions has a first thickness and the narrow fin region has a second thickness, with the second thickness being less than the first thickness. Gate dielectric material is along sidewalls of the first and second post regions, along a top of the narrow fin region, and along side surfaces of the narrow fin region. Gate material is over the gate dielectric material. First and second source/drain regions are within the first and second post regions.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: May 5, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Deepak Chandra Pandey
  • Patent number: 10622062
    Abstract: Provided are a device comprising a bit cell tile including at least two memory cells, each of the at least two memory cells including a resistive memory element, and methods of operating an array of the memory cells, each memory cell including a resistive memory element electrically coupled in series to a corresponding first transistor and to a corresponding second transistor, the first transistor including a first gate coupled to a corresponding one of a plurality of first word lines and the second transistor including a second gate coupled to a corresponding one of a plurality of second word lines, each memory cell coupled between a corresponding one of a plurality of bit lines and a corresponding one of a plurality of source lines. The methods may include applying voltages to the first word line, second word line, source line, and bit line of a memory cell selected for an operation, and resetting the resistive memory element of the memory cell in response to setting the selected bit line to ground.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: April 14, 2020
    Assignee: Hefei Reliance Memory Limited
    Inventors: Deepak Chandra Sekar, Wayne Frederick Ellis, Brent Steven Haukness, Gary Bela Bronner, Thomas Vogelsang
  • Patent number: 10622361
    Abstract: Some embodiments include an apparatus having a transistor associated with a vertically-extending semiconductor pillar. The transistor includes an upper source/drain region within the vertically-extending semiconductor pillar, a lower source/drain region within the vertically-extending semiconductor pillar, and a channel region within the vertically-extending semiconductor pillar and between the upper and lower source/drain regions. The transistor also includes a gate along the channel region. A wordline is coupled with the gate of the transistor. A digit line is coupled with the lower source/drain region of the transistor. A programmable device is coupled with the upper source/drain region of the transistor. A body connection line is over the wordline and extends parallel to the wordline. The body connection line has a lateral edge that penetrates into the vertically-extending semiconductor material pillar. The body connection line is of a different composition than the semiconductor material pillar.
    Type: Grant
    Filed: February 19, 2019
    Date of Patent: April 14, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Deepak Chandra Pandey, Haitao Liu, Chandra Mouli, Sanh D. Tang
  • Patent number: 10622056
    Abstract: Some embodiments include an apparatus which has a wordline coupled with a transistor gate, and which has a compensator line extending along the wordline and spaced from the wordline by a dielectric region. A driver is coupled with the wordline, and a controller is coupled with the compensator line. The wordline is coupled with access transistors, and is operated at a first voltage while the access transistors are in an OFF state. The compensator line is operated at a second voltage while the wordline is at the first voltage; with the second voltage being greater than the first voltage. The wordline is operated at a third voltage while the access transistors are in an ON state, and the compensator line is operated at a fourth voltage while the wordline is at the third voltage. The third voltage may or may not be greater than the fourth voltage.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: April 14, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Deepak Chandra Pandey, Chandra Mouli, Haitao Liu
  • Patent number: 10614422
    Abstract: A method of dynamically changing a read status of an electronic message. A computer accesses a communication management system that manages electronic messages among members of a participating team. The computer reviews at least one electronic message transmitted to a member of the participating team and analyzes a read status of the electronic message of the member to identify an unread electronic message. The computer also tracks a location of the member of the participating team and identifies a meeting between members of the participating team based on the location. The computer will update the read status if members of the participating team discuss content of the unread electronic message during the meeting.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Deepak Arora, Diptiman Dasgupta, Hema Chandra Babu Kolla, Anindya Mitra, Sarbajit K. Rakshit
  • Publication number: 20200105311
    Abstract: Some embodiments include an integrated assembly which has digit-line-contact-regions laterally spaced from one another by intervening regions. Non-conductive-semiconductor-material is over the intervening regions. Openings extend through the non-conductive-semiconductor-material to the digit-line-contact-regions. Conductive-semiconductor-material-interconnects are within the openings and are coupled with the digit-line-contact-regions. Upper surfaces of the conductive-semiconductor-material-interconnects are beneath a lower surface of the non-conductive-semiconductor-material. Metal-containing-digit-lines are over the non-conductive-semiconductor-material. Conductive regions extend downwardly from the metal-containing-digit-lines to couple with the conductive-semiconductor-material-interconnects. Some embodiments include methods of forming integrated assemblies.
    Type: Application
    Filed: December 4, 2019
    Publication date: April 2, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Deepak Chandra Pandey, Si-Woo Lee
  • Patent number: D882512
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: April 28, 2020
    Assignee: GE HYBRID TECHNOLOGIES, LLC
    Inventors: Suma Memana Narayana Bhat, Viswanathan Kanakasabai, Deepak Aravind, Jayanti Ganesh, Sukla Chandra, Mahendra Patil
  • Patent number: D883204
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: May 5, 2020
    Assignee: GE HYBRID TECHNOLOGIES, LLC
    Inventors: Suma Memana Narayana Bhat, Viswanathan Kanakasabai, Deepak Aravind, Jayanti Ganesh, Sukla Chandra, Mahendra Patil