Abstract: A system is disclosed. The system includes a passenger seat. The passenger seat includes a seatback comprising one or more guide tracks and a headrest configured to couple to the seatback. The headrest includes a head portion and a lumbar portion. The lumbar portion is configured to separate from the head portion and translate to a lumbar portion of the seatback. The lumbar portion includes one or more brackets configured to slide along the one or more guide tracks. The passenger seat further includes a translation assembly mechanically coupled to the seatback and the lumbar portion. The translation assembly includes a cable coupled to the one or more brackets, wherein a movement of the cable corresponds to a translation of the lumbar portion. The translation assembly further includes a cable route. The translation assembly further includes one or more pulleys configured to guide the cable through the cable route.

Abstract: This document describes techniques (400, 500, 600) and apparatuses (100, 700) for implementing sensor-based near-field communication (NFC) authentication. These techniques (400, 500, 600) and apparatuses (100, 700) enable a computing device (102) to detect, in a low-power state, environmental variances indicating proximity with an NFC-enabled device (104) with which to authenticate. In some embodiments, various components of a computing device (102) in a sleep state are activated to process environmental variance(s), perform authentication operations, and/or an indicate initiation of authentication operations to a user.

Abstract: A microelectronic device comprises a first pillar of a semiconductive material, a second pillar of the semiconductive material adjacent to the first pillar of the semiconductive material, an active word line extending between the first pillar and the second pillar, and a passing word line extending on a side of the second pillar opposite the active word line, the passing word line extending into an isolation region within the semiconductive material, the isolation region comprising a lower portion and an upper portion having a substantially circular cross-sectional shape and a larger lateral dimension than the lower portion. Related microelectronic devices, electronic systems, and methods are also described.

Abstract: Some embodiments include an integrated assembly having a carrier-sink-structure, and having digit lines over the carrier-sink-structure. Transistor body regions are over the digit lines. Extensions extend from the carrier-sink-structure to the transistor body regions. The extensions are configured to drain excess carriers from the transistor body regions. Lower source/drain regions are between the transistor body regions and the digit lines, and are coupled with the digit lines. Upper source/drain regions are over the transistor body regions, and are coupled with storage elements. Gates are adjacent the transistor body regions. The transistor body regions, lower source/drain regions and upper source/drain regions are together comprised a plurality of transistors. The transistors and the storage elements are together comprised by a plurality of memory cells of a memory array. Some embodiments include methods of forming integrated assemblies.

Abstract: An apparatus comprises active word lines extending within a semiconductive material, passing word lines extending adjacent to the active word lines within the semiconductive material, isolation regions adjacent to the passing word lines, and a band offset material adjacent to the passing word lines and the isolation regions. The semiconductive material exhibits a first bandgap and the band offset material exhibits a second, different bandgap. Related methods and systems are also described.

Abstract: Systems, apparatuses and methods related to access devices formed with conductive contacts are described. An example apparatus may include an access device that includes a field-effect transistor (FET). A vertical pillar may be formed to include a channel of the FET, with a portion of the vertical pillar formed between at least two gates of the FET (i.e., a multi-gate Fin-FET). A conductive contact may be coupled to a body region of the vertical pillar.

Abstract: An array of vertical transistors comprises spaced pillars individually comprising a channel region of individual vertical transistors. A horizontally-elongated conductor line directly electrically couples together individual of the channel regions of the pillars of a plurality of the vertical transistors. An upper source/drain region is above the individual channel regions of the pillars, a lower source/drain region is below the individual channel regions of the pillars, and a conductive gate line is operatively aside the individual channel regions of the pillars and that interconnects multiple of the vertical transistors. Methods are disclosed.

Abstract: Some embodiments include an integrated assembly having a carrier-sink-structure, and having digit lines over the carrier-sink-structure. Transistor body regions are over the digit lines. Extensions extend from the carrier-sink-structure to the transistor body regions. The extensions are configured to drain excess carriers from the transistor body regions. Lower source/drain regions are between the transistor body regions and the digit lines, and are coupled with the digit lines. Upper source/drain regions are over the transistor body regions, and are coupled with storage elements. Gates are adjacent the transistor body regions. The transistor body regions, lower source/drain regions and upper source/drain regions are together comprised a plurality of transistors. The transistors and the storage elements are together comprised by a plurality of memory cells of a memory array. Some embodiments include methods of forming integrated assemblies.

Abstract: A system for implicit authentication for a mobile device associated with a user, wherein the implicit authentication is behavioral, biometric and task-based and includes at least one authentication task selected so as to leverage the user's muscle memory. The mobile device comprises a touchscreen; a transaction authentication information unit; one or more sensors coupled to the transaction authentication information unit; and an anomaly detector coupled to the transaction authentication information unit. The sensors comprise one or more touchscreen sensors coupled to the touchscreen, an accelerometer, and a gyroscope, and are used to obtain and transmit one or more sets of data to the transaction authentication information unit. The sets of data are associated with one or more performances of the authentication task by the user. The anomaly detector generates an authentication model using the one or more data sets transmitted to the transaction authentication information unit.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: A method for operating an automated food making apparatus having a motor, actuator arm, and an apparatus. The apparatus may be a paddle with flexible fins. The method rotates the paddle with a pin-shaft mechanism to dispense an ingredient placed in a canister, controls the motor automatically based on weight sensor readings, and locates a position of the actuator arm with position sensors. The same motor dispenses ingredients from a plurality of canisters. The method may have a plurality of paddle rotation and weight measurement steps until a target weight is reached. The plurality of paddle rotation steps may be unidirectional or bidirectional paddle rotation. The paddle may be rotated according to one or more paddle rotation algorithms, an error recovery algorithm, or different algorithms based on the amounts of ingredients remaining in the canister. The paddle may be rocked until the target weight is achieved.

Abstract: A system is disclosed. The system includes a passenger seat. The passenger seat includes a seatback comprising one or more guide tracks and a headrest configured to couple to the seatback. The headrest includes a head portion and a lumbar portion. The lumbar portion is configured to separate from the head portion and translate to a lumbar portion of the seatback. The lumbar portion includes one or more brackets configured to slide along the one or more guide tracks. The passenger seat further includes a translation assembly mechanically coupled to the seatback and the lumbar portion. The translation assembly includes a cable coupled to the one or more brackets, wherein a movement of the cable corresponds to a translation of the lumbar portion. The translation assembly further includes a cable route. The translation assembly further includes one or more pulleys configured to guide the cable through the cable route.

Abstract: A system for implicit authentication for a mobile device associated with a user, wherein the implicit authentication is behavioral, biometric and task-based and includes at least one authentication task selected so as to leverage the user's muscle memory. The mobile device comprises a touchscreen; a transaction authentication information unit; one or more sensors coupled to the transaction authentication information unit; and an anomaly detector coupled to the transaction authentication information unit. The sensors comprise one or more touchscreen sensors coupled to the touchscreen, an accelerometer, and a gyroscope, and are used to obtain and transmit one or more sets of data to the transaction authentication information unit. The sets of data are associated with one or more performances of the authentication task by the user. The anomaly detector generates an authentication model using the one or more data sets transmitted to the transaction authentication information unit.

Abstract: Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices having a first source/drain region and a second source drain region separated by a channel region, and gates opposing the channel region, vertically oriented access lines coupled to the gates and separated from a channel region by a gate dielectric. The memory cells have horizontally oriented storage nodes coupled to the second source/drain region and horizontally oriented digit lines coupled to the first source/drain regions. In one example, an insulator material is formed on a surface of the first source/drain region and a conductor material formed on the insulator material to form a metal insulator semiconductor (MIS) interface between the horizontally oriented digit lines and the first source/drain regions of the horizontally oriented access devices.

Abstract: A memory cell includes a first resistive memory element, a second resistive memory element electrically coupled with the first resistive memory element at a common node, and a switching element comprising an input terminal electrically coupled with the common node, the switching element comprising a driver configured to float during one or more operations.

Abstract: An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate to form an active area of the apparatus. The first source/drain region and the second source/drain region are separated by a channel. The apparatus includes a gate opposing the channel. A sense line is coupled to the first source/drain region and a storage node is coupled to the second source/drain region. An isolation trench is adjacent to the active area. The trench includes a dielectric material with a conductive bias opposing the conductive bias of the channel in the active area.

Abstract: Some embodiments include an integrated assembly having a memory array, and having digit lines extending along a first direction through the memory array. Insulative spacers are along sidewalls of the digit lines. The insulative spacers extend continuously along the digit lines through the memory array. Conductive regions are laterally spaced from the digit lines by intervening regions. The conductive regions are configured as segments spaced apart from one another along the first direction. The intervening regions include regions of the insulative spacers and include void regions adjacent the regions of the insulative spacers. The void regions are configured as void-region-segments which are spaced apart from one another along the first direction by insulative structures. Storage-elements are associated with the conductive regions. Some embodiments include methods of forming integrated assemblies.

Abstract: A microelectronic device comprises a first pillar of a semiconductive material, a second pillar of the semiconductive material adjacent to the first pillar of the semiconductive material, an active word line extending between the first pillar and the second pillar, and a passing word line extending on a side of the second pillar opposite the active word line, the passing word line extending into an isolation region within the semiconductive material, the isolation region comprising a lower portion and an upper portion having a substantially circular cross-sectional shape and a larger lateral dimension than the lower portion. Related microelectronic devices, electronic systems, and methods are also described.

Abstract: Some embodiments include an integrated assembly having a memory array, and having digit lines extending along a first direction through the memory array. Insulative spacers are along sidewalls of the digit lines. The insulative spacers extend continuously along the digit lines through the memory array. Conductive regions are laterally spaced from the digit lines by intervening regions. The conductive regions are configured as segments spaced apart from one another along the first direction. The intervening regions include regions of the insulative spacers and include void regions adjacent the regions of the insulative spacers. The void regions are configured as void-region-segments which are spaced apart from one another along the first direction by insulative structures. Storage-elements are associated with the conductive regions. Some embodiments include methods of forming integrated assemblies.