Abstract: The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

Abstract: The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

Abstract: The present invention relates to a photoalignable material comprising a photoactive stilbazolium-containing polymer of formula I: wherein, Ma, Mb, Mc are monomer units making up the polymer; x, y, z, are mole fractions of the monomer units Ma, Mb, Mc, wherein in each case 0<x?1; 0?y<1, 0?z<1; Sa and Sb are spacer units; Za is a stilbazolium unit which can undergo photochemical isomerization/dimerization reactions; Zb is a stilbazole unit, and n varies from 4 to 10,000. The present invention also relates to a display using a layer of the photoaligned material and methods for aligning the orientation layer as well as orienting a liquid crystal layer applied to the photoaligned orientation layer.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.

Abstract: A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

Abstract: The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N?-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material.

Abstract: A process for forming an aryl-aryl bond comprises the step of reacting an arene hydrocarbon compound with either (1) an organic oxidant selected from the group consisting of a quinone, a quinone imine, a quinone diimine, and a nitroarene, or (2) an oxidizing salt selected from the group consisting of a triarylaminium salt, an oxonium salt, and a nitrosium salt, or (3) a hypervalent iodine compound, each in the presence of a Brönsted or Lewis acid.

Abstract: The present invention relates to a light curable material comprising a splayed layered material, at least one aqueous dispersible polymerizer, and at least one aqueous soluble N-oxyazinium compound, wherein the polymerizer polymerizes upon exposure to light. The present invention also includes a method for curing a material comprising providing layered material, splaying the layered material, combining the splayed layered material with a polymerizer and an aqueous soluble N-oxyazinium compound, and subjecting the combination to light for a period of time sufficient to effect the polymerization of the polymerizer.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: The present invention relates to photo-tunable dopant compositions comprising a photo-reactive chiral compound capable of undergoing a photochemical reaction resulting in the loss of chirality, and a triplet sensitizer. The present invention also relates to a display comprising a substrate, a liquid crystalline layer thereon, wherein the liquid crystalline layer comprises a nematic host, at least one chiral dopant, a photo-reacted compound, and a triplet sensitizer, and at least one transparent conductive layer. The present invention also relates to a method of tuning a cholesteric liquid crystal material comprising providing at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound; combining the at least one mesogenic compound, at least one triplet sensitizer, and at least one photo-reactive chiral compound to form a mixture; and irradiating the mixture for a period of time.

Abstract: Polymer films comprising plasticizer compounds represented by Structure 1 as described in the specification are useful as protective films in polarizing plates for display applications. Methods of manufacturing such polymer films and polarizing plates are also disclosed.

Abstract: The present invention relates to a photoalignable material comprising a photoactive stilbazolium-containing polymer of formula I: wherein, Ma, Mb, Mc are monomer units making up the polymer; x, y, z, are mole fractions of the monomer units Ma, Mb, Mc, wherein in each case 0<x?1; 0?y<1, 0?z<1; Sa and Sb are spacer units; Za is a stilbazolium unit which can undergo photochemical isomerization/dimerization reactions; Zb is a stilbazole unit, and n varies from 4 to 10,000. The present invention also relates to a display using a layer of the photoaligned material and methods for aligning the orientation layer as well as orienting a liquid crystal layer applied to the photoaligned orientation layer.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: Disclosed is a multilayer film comprising a substrate bearing an aligned liquid crystal layer wherein the liquid crystal layer contains a Lewis acid. Such a film is useful for aligning a liquid crystal material to an increased tilt angle.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.