Abstract: Methods, systems, and devices for enhanced data reliability in multi-level memory cells are described. For a write operation, a host device may identify a first set of data to be stored by a set of memory cells at a memory device. Based on a quantity of bits within the first set of data being less than a storage capacity of the set of memory cells, the host device may generate a second set of data and transmit a write command including the first and second sets of data to the memory device. For a read operation, the host device may receive a first set of data from the memory device in response to transmitting a read command. The memory device may extract a second set of data from the first set of data and validate a portion of the first set of data using the second set of data.

Abstract: A memory sub-system to initiate an erase operation to erase a first set of memory cells of a first memory block and a second set of memory cells of a second memory block of a memory device. One or more erase pulses of the erase operation are caused to be applied to the first set of memory cells of the first memory block and the second set of memory cells of the second memory block concurrently. A first erase verify sub-operation of the erase operation is caused to be performed to verify the first memory block is erased and a second erase verify sub-operation of the erase operation is caused to be performed to verify the second memory block is erased.

Abstract: Methods, systems, and devices for commands to support adaptive memory systems are described. A memory system may be configured to receive a command to perform an operation on an address of a memory system, the command including an indication of a count of program/erase cycles associated with the address; determine whether the count of program/erase cycles associated with the address satisfies a threshold; adjust a trim parameter for operating the memory system based at least in part on determining that the indication of the count of program/erase cycles satisfies the threshold; and perform the operation associated with the command using the adjusted trim parameter.

Abstract: Methods, systems, and devices for memory block utilization in memory systems are described. A system configured to allow a memory device to group or segment a memory block into two or more sub-memory blocks, which can be independently programmed is described herein. For example, a host system may determine a configuration of a memory array, and communicate the configuration information to the memory system, and transmit a command for an operation to the memory system. In some examples, the memory system may utilize the memory array configuration information and determine to segment the blocks of memory cells into sub-blocks. By segmenting the memory block into sub-blocks, the memory device may maintain its memory block density while supporting efficient programming of blocks of the memory array.

Abstract: Methods, systems, and devices for compression-based address mapping management in a memory system are described. A memory system may reduce a quantity of times regions of an address mapping table are transferred between a non-volatile memory and a local memory of the memory system. The memory system may selectively retain regions of the address mapping table in local memory in-between checkpoint procedures. During a checkpoint procedure, the memory system may compress the regions of the address mapping table in the local memory and, if the regions are sufficiently compressible, may keep the regions in the local memory until the next checkpoint procedure.

Abstract: Methods, systems, and devices for data transfer during maintenance operations are described. A memory system utilize an auto-suspend feature to parallelize aspects of maintenance operations. For example, the memory system may suspend a programming operation being performed on a first block of memory cells. The memory system may read data from a second block of memory cells while the programming operation is suspended, and may transfer the data from the second block of memory cells (e.g., to a controller) in parallel with resuming the programming operation on the first block of memory cells. The memory system may transfer the data read from the second block of memory cells to a third block of memory cells in parallel with resuming the programming operation on the first block of memory cells.

Abstract: Methods, systems, and devices for redundant array management techniques are described. A memory system may include a volatile memory device, a non-volatile memory device, and one or more redundant arrays of independent nodes. The memory system may include a first redundant array controller and a second redundant array controller of a redundant array of independent nodes. The memory system may receive a write command associated with writing data to a type of memory cell. Based on the type of memory cell, the memory system may generate parity data corresponding to the data using one or both of the first redundant array controller and the second redundant array controller. In some examples, the first redundant array controller may be configured to generate parity data associated with a first type of failure and the second redundant array controller may be configured to generate parity data associated with a second type of failure.

Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

Abstract: Methods, systems, and devices for signal monitoring by a memory system are described. A memory system may receive signaling (e.g., from a host system) and may sample the signal and generate an eye diagram. During a normal mode of operation, the memory system monitor characteristics of the eye diagram to improve signaling. The memory system may determine a voltage level of the signaling based on one or more input parameters and sampling times associated with the signaling. An indication of the voltage level of the signaling may be stored (e.g., to a register of the memory system) and may be periodically transmitted to the host system.

Abstract: A fluid management apparatus and a thermal management system are provided. A flow passage plate assembly and a valve mechanism of the fluid management apparatus are arranged separately; a valve body of the valve mechanism is fixedly connected to the flow passage plate assembly; the valve body and the flow passage plate assembly can be processed separately and then assembled together; a passage of the valve mechanism has openings on the same wall of the valve body.

Abstract: Methods, systems, and devices for cache block budgeting techniques are described. In some memory systems, a controller may configure a memory device with a cache. The cache may include a first subset of blocks configured to statically operate in a first mode and a second subset of blocks configured to dynamically switch between operating in the first mode and a second mode. A block operating in the second mode may be configured to store relatively more bits per memory cell than a block operating in the first mode. The controller may track and store, for each block of the second subset of blocks, a respective ratio of cycles performed in the first mode to cycles performed in the second mode. The controller may select a block from the second subset of blocks to switch between modes responsive to a trigger and based on the respective ratio for the block.

Abstract: Methods, systems, and devices for commands to support adaptive memory systems are described. A memory system may be configured to receive a command to perform an operation on an address of a memory system, the command including an indication of a count of program/erase cycles associated with the address; determine whether the count of program/erase cycles associated with the address satisfies a threshold; adjust a trim parameter for operating the memory system based at least in part on determining that the indication of the count of program/erase cycles satisfies the threshold; and perform the operation associated with the command using the adjusted trim parameter.

Abstract: Described are systems and methods related to a memory block erase protocol. An example system includes a memory device having a memory array including a plurality of memory cells. The system further includes a processing device coupled to the memory device. The processing device is to determine a value of a program-erase cycle count associated with at least a portion of the plurality of memory cells. The processing device is further to erase, based on the value of the PEC count, less than a predetermined portion of free sets of memory cells to form an erased set of memory cells. The processing device is further to receive a programming command directed to at least a portion of the erased set of memory cells. The processing device is further to perform a programming operation with respect to the at least a portion of the erased set of memory cells.

Abstract: Methods, systems, and devices for techniques for retiring blocks of a memory system are described. In some examples, aspects of a memory system or memory device may be configured to determine an error for a block of memory cells. Upon determining the occurrence of the error, the memory system may identify one or more operating conditions associated with the block. For example, the memory system may determine a temperature of the block, a cycle count of the block, a quantity of times the block has experienced an error, a bit error rate of the block, and/or a quantity of available blocks in the associated system. Depending on whether a criteria associated with a respective operating condition is satisfied, the block may be enabled or retired.

Abstract: Techniques for access operation status signaling for memory systems are described. In some examples, a memory system may respond to access commands from a host system by performing access operations such as read or write operations. In accordance with examples as disclosed herein, a system may be configured to support access operation status signaling between a host system and a memory system, which may improve the ability of the system to adapt to various access scenarios, including when access operation completion is delayed. For example, when a memory system is performing an error recovery or media management operation, the memory system may indicate that the error recovery or media management operation is being performed or is otherwise ongoing. Such status signaling may indicate that the memory system is actively performing operations, which may be used to inhibit a reset or reinitialization by a host system.

Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

Abstract: Methods, systems, and devices for host recovery for a stuck condition of a memory system are described. The host system may transmit a first command for the memory system to transition from a first power mode to a second power mode (e.g., low-power mode). In some cases, the host system may transmit a second command for the memory system to exit the second power mode shortly after transmitting the first command. The host system may activate a timer associated with a time-out condition for exiting the second power mode and may determine that a duration indicated by the timer expires. In some examples, the host system may transmit a third command for the memory system to perform a hardware reset operation based on determining that the duration of the timer expires.

Abstract: Methods, systems, and devices for data compression for mapping tables are described. A memory system may store a table that includes mappings between a set of logical block addresses and a set of physical block addresses. The table may be stored to volatile memory of the memory system and each entry may include a subset of physical block addresses and one or more logical block addresses that correspond to the subset of physical block addresses. In some implementations, a quantity of the entries that each include the subset of physical block addresses and the one or more logical block addresses may be determined based on dividing the set of physical block addresses by a factor. Similarly, a size of the entries may be determined based on dividing the set of physical block addresses by the factor.

Abstract: Methods, systems, and devices for redundant array management techniques are described. A memory system may include a volatile memory device, a non-volatile memory device, and one or more redundant arrays of independent nodes. The memory system may include a first redundant array controller and a second redundant array controller of a redundant array of independent nodes. The memory system may receive a write command associated with writing data to a type of memory cell. Based on the type of memory cell, the memory system may generate parity data corresponding to the data using one or both of the first redundant array controller and the second redundant array controller. In some examples, the first redundant array controller may be configured to generate parity data associated with a first type of failure and the second redundant array controller may be configured to generate parity data associated with a second type of failure.

Abstract: Methods, systems, and devices for shallow hibernate power state are described. A memory system may include a memory array and a controller. The memory system may transition from a first power state having a first current to a second power state having a second current less than the first current, where the first power state is associated with executing received commands and the second power state is associated with deactivating one or more components of the memory array. The memory system may initiate a timer after transitioning from the first power state to the second power state. The memory system may determine the timer satisfies a threshold and transition from the second power state to a third power state having a third current less than the second current based on the timer satisfying the threshold.