Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a pattern of host accessing the device are discussed. The host access pattern can be represented by how frequent the device is in idle states free of active host access. An exemplary memory device includes a memory controller to track a count of idle periods during a specified time window, and to adjust an amount of memory space to be freed by a GC operation in accordance with the count of idle periods. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the count of idle periods during the specified time window.

Abstract: Several embodiments of memory devices and related methods for initializing such memory devices based on initialization information stored in NAND-based memory media. In one embodiment, a memory device can include a controller operably coupled to the memory media. The controller is configured to determine whether the initialization information stored at a region of the memory media is valid, initialize the memory device based at least in part on the initialization information when valid, and invalidate the initialization information stored at the region of the memory media by writing to the region of the memory media without first erasing the region of the memory media.

Abstract: Devices and techniques for a dynamically adjusting a garbage collection workload are described herein. For example, memory device idle times can be recorded. From these recorded idle times, a metric can be derived. A a current garbage collection workload can be divided into portions based on the metric. Then, a first portion of the divided garbage collection workload can be performed at a next idle time.

Abstract: A processing device initializes a drive strength value of a storage device in an electronic device to a first level. The processing device detects an operation to be performed on the storage device and executes the operation. The processing device monitors a bit error rate occurring in the storage device as a result of executing the operation and determines if the bit error rate satisfies a threshold value. In response to determining that the bit error rate satisfies he threshold value, the processing device increases the drive strength value of the storage device to a second level and re-executs the operation at the increased drive strength value of the storage device.

Abstract: Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is provisionally removed from service in response to encountering read errors in the first memory block. Memory pages of the first memory block are tested in a second mode comprising reading memory pages at different read voltages. A raw bit error rate (RBER) or a read window budget (RWB) is determined for memory pages at the different read voltages and the provisionally removed first memory block is returned to service or retired based on the determined RBER or the RWB.

Abstract: Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a pattern of host accessing the device are discussed. The host access pattern can be represented by how frequent the device is in idle states free of active host access. An exemplary memory device includes a memory controller to track a count of idle periods during a specified time window, and to adjust an amount of memory space to be freed by a GC operation in accordance with the count of idle periods. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the count of idle periods during the specified time window.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a host write activity are described. A host write progress can be represented by an actual host write count relative to a target host write count. The host write activity may be estimated in a unit time such as per day, or accumulated over a specified time period. A memory controller can adjust an amount of memory space to be freed by a GC operation according to the host write progress. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the host write progress.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a pattern of host accessing the device are discussed. The host access pattern can be represented by how frequent the device is in idle states free of active host access. An exemplary memory device includes a memory controller to track a count of idle periods during a specified time window, and to adjust an amount of memory space to be freed by a GC operation in accordance with the count of idle periods. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the count of idle periods during the specified time window.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to an estimated device age are discussed. An exemplary memory device includes a memory controller to track an actual device age, determine a device wear metric using a physical write count and total writes over an expected lifetime of the memory device, estimate a wear-indicated device age, and adjust an amount of memory space to be freed by a GC operation according to the wear-indicated device age relative to the actual device age. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the wear-indicated device age relative to the actual device age.

Abstract: Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.

Abstract: Several embodiments of memory devices and related methods for initializing such memory devices based on initialization information stored in NAND-based memory media. In one embodiment, a memory device can include a controller operably coupled to the memory media. The controller is configured to determine whether the initialization information stored at a region of the memory media is valid, initialize the memory device based at least in part on the initialization information when valid, and invalidate the initialization information stored at the region of the memory media by writing to the region of the memory media without first erasing the region of the memory media.

Abstract: Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.

Abstract: Several embodiments of memory devices and related methods for initializing such memory devices based on initialization information on stored in NAND-based memory media. In one embodiment, a memory device can include a controller operably coupled to the memory media. The controller is configured to determine whether the initialization information stored at a region of the memory media is valid, initialize the memory device based at least in part on the initialization information when valid, and invalidate the initialization information stored at the region of the memory media by writing to the region of the memory media without first erasing the region of the memory media.

Abstract: Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.

Abstract: The present disclosure includes apparatuses and methods for error rate reduction. One example method comprises adding an amount of error rate reduction (ERR) data to an amount of received user data, and writing the amount of user data along with the amount of ERR data to a memory.

Abstract: Devices and techniques for a flash memory block retirement policy are disclosed herein. In an example embodiment, a first memory block is removed from service in response to encountering a read error in the first memory block that exceeds a first error threshold. Recoverable data is copied from the first memory block to a second memory block. During each of multiple iterations, the first memory block is erased and programmed, and each page of the first memory block is read. In response to none of the pages exhibiting a read error that exceeds a second error threshold during the multiple iterations, the first memory block is returned to service.

Abstract: Several embodiments of memory devices and related methods for initializing such memory devices based on initialization information on stored in NAND-based memory media. In one embodiment, a memory device can include a controller operably coupled to the memory media. The controller is configured to determine whether the initialization information stored at a region of the memory media is valid, initialize the memory device based at least in part on the initialization information when valid, and invalidate the initialization information stored at the region of the memory media by writing to the region of the memory media without first erasing the region of the memory media.

Abstract: The present disclosure includes apparatuses and methods for error rate reduction. One example method comprises adding an amount of error rate reduction (ERR) data to an amount of received user data, and writing the amount of user data along with the amount of ERR data to a memory.

Abstract: Memory devices and methods of erasing the memory devices are disclosed. One such method includes performing an erase cycle of an erase operation on a plurality of memory cells, where performing the erase cycle of the erase operation includes selecting an erase verify voltage to be applied during the erase cycle from a plurality of erase verify voltages based on where in the erase operation the erase cycle occurs.