Abstract: A method includes receiving, by a processing device, signaling indicative of a power cycle (PC) to a memory device (MD) having a first signal indicative of a Power On Operation and a second signal indicative of a Power Off Operation, and determining an Average Power On Time (APOT) of the MD based, at least in part, on a quantity of power cycles (n) to the MD over a predetermined time interval (PTI), and for each PC over the PTI, an amount of time between receipt of the first signal and the second signal. A sum of each of the amount of time between receipt of the first signal and the second signal in the PTI provides a total power on time (T) to the MD, and the APOT is equal to T/n. When the APOT is less than (<) a threshold APOT value, determining a frequency at which to perform media scan operations and performing media scan operations involving the MD at the determined frequency.

Abstract: Systems and methods for adapting garbage collection (GC) operations in a memory device to a pattern of host accessing the device are discussed. The host access pattern can be represented by how frequent the device is in idle states free of active host access. An exemplary memory device includes a memory controller to track a count of idle periods during a specified time window, and to adjust an amount of memory space to be freed by a GC operation in accordance with the count of idle periods. The memory controller can also dynamically reallocate a portion of the memory cells between a single level cell (SLC) cache and a multi-level cell (MLC) storage according to the count of idle periods during the specified time window.

Abstract: Methods, systems, and devices for cache block budgeting techniques are described. In some memory systems, a controller may configure a memory device with a cache. The cache may include a first subset of blocks configured to statically operate in a first mode and a second subset of blocks configured to dynamically switch between operating in the first mode and a second mode. A block operating in the second mode may be configured to store relatively more bits per memory cell than a block operating in the first mode. The controller may track and store, for each block of the second subset of blocks, a respective ratio of cycles performed in the first mode to cycles performed in the second mode. The controller may select a block from the second subset of blocks to switch between modes responsive to a trigger and based on the respective ratio for the block.

Abstract: Devices and techniques for a dynamically adjusting a garbage collection workload are described herein. For example, memory device idle times can be recorded. From these recorded idle times, a metric can be derived. A current garbage collection workload can be divided into portions based on the metric. Then, a first portion of the divided garbage collection workload can be performed at a next idle time.

Abstract: Methods, systems, and devices for dynamic power control are described. In some examples, a memory device may be configured to adjust a first duration for transitioning power modes. For example, the memory device may be configured to operate in a first power mode, a second power mode, and a third power mode. When operating in a second power mode, the memory device may be configured to increase or decrease the first duration for transitioning to a third power mode based on a second duration between received commands. If no commands are received during the first duration, the memory device may transition from the second power mode to the third power mode.

Abstract: A method includes receiving, by a processing device, signaling indicative of a power cycle (PC) to a memory device (MD) having a first signal indicative of a Power On Operation and a second signal indicative of a Power Off Operation, and determining an Average Power On Time (APOT) of the MD based, at least in part, on a quantity of power cycles (n) to the MD over a predetermined time interval (PTI), and for each PC over the PTI, an amount of time between receipt of the first signal and the second signal. A sum of each of the amount of time between receipt of the first signal and the second signal in the PTI provides a total power on time (T) to the MD, and the APOT is equal to T/n. When the APOT is less than (<) a threshold APOT value, determining a frequency at which to perform media scan operations and performing media scan operations involving the MD at the determined frequency.

Abstract: Methods, systems, and devices for memory device with enhanced data reliability capabilities are described. For a write operation, a memory device may receive a write command from a host device indicating a first set of data. The memory device may determine to operate in first mode of operation associated with a reliability above a threshold and generate a second set of data to store with the first set of data based on operating in the first mode of operation. For a read operation, the memory device may identify that a read command received from a host device is associated with the first mode of operation. Based on operating in the first mode of operation, the memory device may select one or more reference thresholds (e.g., a subset of reference thresholds) to retrieve the first set of data and transmit the first set of data to the host device.

Abstract: Methods, systems, and devices for memory data correction using multiple error control operations are described. A single command may be received to correct an error detected in data stored by a memory array. A first error control operation and a second error control operation may be implemented based on the single command. The first error control operation may be performed on the data stored by the memory array using one or more different reference voltages to read the data. The error may be determined to remain in the data after performing the first error control operation. The second error control operation may then be performed on the data stored by the memory array. The second error control operation may use one or more voltage distributions associated with the memory cells of the memory array.

Abstract: Methods, systems, and devices for shallow hibernate power state are described. A memory system may include a memory array and a controller. The memory system may transition from a first power state having a first current to a second power state having a second current less than the first current, where the first power state is associated with executing received commands and the second power state is associated with deactivating one or more components of the memory array. The memory system may initiate a timer after transitioning from the first power state to the second power state. The memory system may determine the timer satisfies a threshold and transition from the second power state to a third power state having a third current less than the second current based on the timer satisfying the threshold.

Abstract: Methods, systems, and devices for redundant array management techniques are described. A memory system may include a volatile memory device, a non-volatile memory device, and one or more redundant arrays of independent nodes. The memory system may include a first redundant array controller and a second redundant array controller of a redundant array of independent nodes. The memory system may receive a write command associated with writing data to a type of memory cell. Based on the type of memory cell, the memory system may generate parity data corresponding to the data using one or both of the first redundant array controller and the second redundant array controller. In some examples, the first redundant array controller may be configured to generate parity data associated with a first type of failure and the second redundant array controller may be configured to generate parity data associated with a second type of failure.

Abstract: Methods, systems, and devices for host recovery for a stuck condition of a memory system are described. The host system may transmit a first command for the memory system to transition from a first power mode to a second power mode (e.g., low-power mode). In some cases, the host system may transmit a second command for the memory system to exit the second power mode shortly after transmitting the first command. The host system may activate a timer associated with a time-out condition for exiting the second power mode and may determine that a duration indicated by the timer expires. In some examples, the host system may transmit a third command for the memory system to perform a hardware reset operation based on determining that the duration of the timer expires.

Abstract: Methods, systems, and devices for memory read performance techniques are described. A memory system may receive a sequence of read commands. Based on detecting a set of consecutive read commands, the memory system may pre-read data from a second logical block address (LBA) in a non-volatile memory device to a volatile memory device based on receiving a first read command that includes a first LBA, where the second LBA is consecutive with the first LBA. The memory system may subsequently receive a second read command that includes the second LBA, and read out the second data without performing an additional access operation of the non-volatile storage device. In some examples, using such a pre-read, the memory system may capable of returning data in a different order than the order in which the commands were received.

Abstract: Methods, systems, and devices for volatile register to detect power loss are described. The memory system may receive a command to enter a first power mode having a lower power consumption than a second power mode. The memory system may store data in a register associated with the memory system before entering the first power mode (e.g., a low-power mode). The memory system may receive a command to exit the first power mode. The memory system may determine whether the data stored in the register includes one or more errors. The memory system may select a reset operation to perform to exit the first power mode based on determining whether the data stored in the register includes one or more errors.

Abstract: Methods, systems, and devices for topology-based retirement in a memory system are described. In some examples, a memory system or memory device may be configured to evaluate error conditions relative to a physical or electrical organization of a memory array, which may support inferring the presence or absence of defects in one or more structures of a memory device. For example, based on various evaluations of detected errors, a memory system or a memory device may be able to infer a presence of a short-circuit, an open circuit, a dielectric breakdown, or other defects of a memory array that may be related to wear or degradation over time, and retire a portion of a memory array based on such an inference.

Abstract: A memory device comprises a memory array that includes memory cells and a memory controller operatively coupled to the memory array. The memory controller includes an oscillator circuit, internal memory, a processor core coupled to the oscillator circuit and the internal memory, and configured to load operating firmware during a boot phase of the memory device, voltage detector circuitry configured to detect a decrease in a circuit supply voltage of the memory controller during the boot phase, and logic circuitry configured to halt operation of the oscillator circuit and power down the processor core and the internal memory during the boot phase in a low power mode in response to detecting the decrease in the circuit supply voltage.

Abstract: Methods, systems, and devices for access of a memory system based on fragmentation are described. The memory system may receive a first message indicating a set of data that the memory system is to store using a fragmentation-based write procedure. The memory system may, based on the first message, determine blocks of a memory device that satisfy a fragmentation threshold. After determining the blocks, the memory system may transmit to the host system a second message that indicates the memory system is ready to receive the set of data indicated in the first message. The memory system may then store the set of data in the determined blocks based on transmitting the second message.

Abstract: A memory device comprises a memory array that includes memory cells and a memory controller operatively coupled to the memory array. The memory controller includes an oscillator circuit, internal memory, a processor core coupled to the oscillator circuit and the internal memory, and configured to load operating firmware during a boot phase of the memory device, voltage detector circuitry configured to detect a decrease in a circuit supply voltage of the memory controller during the boot phase, and logic circuitry configured to halt operation of the oscillator circuit and power down the processor core and the internal memory during the boot phase in a low power mode in response to detecting the decrease in the circuit supply voltage.

Abstract: Several embodiments of memory devices and related methods for initializing such memory devices based on initialization information stored in NAND-based memory media. In one embodiment, a memory device can include a controller operably coupled to the memory media. The controller is configured to determine whether the initialization information stored at a region of the memory media is valid, initialize the memory device based at least in part on the initialization information when valid, and invalidate the initialization information stored at the region of the memory media by writing to the region of the memory media without first erasing the region of the memory media.

Abstract: Techniques for access operation status signaling for memory systems are described. In some examples, a memory system may respond to access commands from a host system by performing access operations such as read or write operations. In accordance with examples as disclosed herein, a system may be configured to support access operation status signaling between a host system and a memory system, which may improve the ability of the system to adapt to various access scenarios, including when access operation completion is delayed. For example, when a memory system is performing an error recovery or media management operation, the memory system may indicate that the error recovery or media management operation is being performed or is otherwise ongoing. Such status signaling may indicate that the memory system is actively performing operations, which may be used to inhibit a reset or reinitialization by a host system.

Abstract: Methods, systems, and devices for memory data correction using multiple error control operations are described. A single command may be received to correct an error detected in data stored by a memory array. A first error control operation and a second error control operation may be implemented based on the single command. The first error control operation may be performed on the data stored by the memory array using one or more different reference voltages to read the data. The error may be determined to remain in the data after performing the first error control operation. The second error control operation may then be performed on the data stored by the memory array. The second error control operation may use one or more voltage distributions associated with the memory cells of the memory array.