Abstract: A composition includes an electrode made of Lithium Manganese Oxyfluoride (LMOF). A single layer separator adheres to a surface of the electrode, is a dielectric that is conductive for Lithium ions but not electrons, and has top and bottom sides. A solid polymer electrolyte (SPE) saturates the electrode so that the LMOF is between 55 percent and 85 percent by mass of a composition of the LMOF electrode and the SPE is between 7.5 percent and 20 percent by mass of the composition of the LMOF electrode. The SPE saturates the separator so that the SPE resides both on the separator top and bottom sides so that the SPE residing on the separator top side contacts the surface. The LMOF exhibits X-Ray Diffraction spectrum peaks between twenty-two and twenty-four 2-theta degrees, between forty-eight and fifty 2-theta degrees, between fifty-four and fifty-six 2-theta degrees, and between fifty-six and fifty-eight 2-theta degrees.

Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.

Abstract: An element to be used as an anode in a lithium-ion battery comprising a lithiated single crystal porous-silicon layer made on the surface of a p-doped single crystal Si of thickness 25-1000 mm and resistivity of less than 0.01-ohm cm. Successful lithiation is achieved either electrochemically or by direct alloying of lithium metal with the porous-Si with a wide range of porosities. The lithiated silicon anode allows a high cathode loading in a lithium-ion battery resulting in record current densities without the formation of lithium dendrites.

Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.

Abstract: A structure including a bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the substrate, a top electrode on and vertically aligned with the phase change material layer, a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer. A structure including a phase change material layer selected from amorphous silicon, amorphous germanium and amorphous silicon germanium, a top electrode on the phase change material layer, a bottom electrode, a dielectric material isolating the bottom electrode from the top electrode and the phase change material layer. Forming a bottom electrode, forming a phase change material layer adjacent to the bottom electrode, forming a top electrode above the phase change material, forming a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer.

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

Abstract: An element to be used as an anode in a lithium-ion battery comprising an electrochemically lithiated thick or thin p or n-doped virgin single crystal Si with or without an oxide on the upper surface thereof. The lithiated structure further has a plurality of single crystalline p or n-doped Si particles dispersed over a non-lithium reactive reacting electrically conductive adhesive positioned atop a current collector.

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.

Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.

Abstract: A Phase-Change Memory (PCM) device includes a dielectric layer, a bottom electrode disposed in the dielectric layer, a liner material disposed on the bottom electrode, a phase-change material disposed on the liner material, and a top electrode disposed on the phase-change material and in the dielectric layer.

Abstract: A semiconductor structure includes a substrate having a doped silicon substrate, a buried oxide layer, and a silicon device layer. A trench capacitor having an inner electrode and a node dielectric layer is formed in a trench of the substrate. The inner electrode and the node dielectric layer extend into the doped silicon substrate. A select transistor is disposed in the silicon device layer. An embedded contact is disposed atop the trench capacitor to electrically couple a doped region of the select transistor with the inner electrode. A first dielectric layer is disposed around the select transistor. A second dielectric layer is deposited on the first dielectric layer. A contact plug is formed in the second dielectric layer and the first dielectric layer and is in direct contact with the embedded contact. A memory stack with a MTJ element is disposed on the contact plug.

Abstract: A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

Abstract: Techniques for the integration of SiGe/Si optical resonators with qubit and CMOS devices using structured substrates are provided. In one aspect, a waveguide structure includes: a wafer; and a waveguide disposed on the wafer, the waveguide having a SiGe core surrounded by Si, wherein the wafer has a lower refractive index than the Si (e.g., sapphire, diamond, SiC, and/or GaN). A computing device and a method for quantum computing are also provided.

Abstract: Systems and techniques that facilitate quantum tuning via permanent magnetic flux elements are provided. In various embodiments, a system can comprise a qubit device. In various aspects, the system can further comprise a permanent magnet having a first magnetic flux, wherein an operational frequency of the qubit device is based on the first magnetic flux. In various instances, the system can further comprise an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet can comprise a nanoparticle magnet. In various embodiments, the nanoparticle magnet can comprise manganese nanoparticles embedded in a silicon matrix. In various aspects, the system can further comprise an electrode that applies an electric current to the nanoparticle magnet in a presence of the second magnetic flux, thereby changing a strength of the first magnetic flux.

Abstract: A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.

Abstract: A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.

Abstract: A phase change (PCM) memory device that includes a PCM and a resistance-capacitance (RC) circuit. The PCM has one or more PCM properties, each PCM property has a plurality of PCM property states. As the PCM property states of a given property are Set or Reset, the PCM property states each produce an incremental change to a property level of the respective/associated PCM property, e.g., PCM conductance. The incremental changes to property level of the PCM memory device are in response to application of one or more of a pulse number of voltage pulses. The RC circuit produces a configuring current that flows through the PCM in response to one or more of the voltage pulses. The configuring current modifies one or more of the incremental changes to one or more of the property levels so that the property level changes lineally with respect to the pulse number. The PCM memory device has use in a synapse connector, e.g., in a memory array.

Abstract: A vertical Josephson Junction (JJ) qubit device that is fabricated from crystalline silicon material is provided. The JJ device has a substrate of epitaxial silicon, a lower superconducting electrode that is a superconducting region of the epitaxial silicon and an upper superconducting electrode of a metallic superconductor. The JJ device also has a junction layer. A section of the junction layer between the lower and upper superconducting electrodes forms a junction of the JJ device. Resonator and/or capacitor wiring of the JJ device is also fabricated using the metallic superconductor. The superconducting region is epitaxial silicon that is doped or implanted with boron or gallium. The substrate, the junction layer, and the implanted epitaxial silicon share a contiguous crystalline structure.