Abstract: A conductor guide member for a circuit breaker terminal assembly includes a body having at least one conductor guide surface configured and disposed to facilitate alignment between at least one terminal connection member of the terminal assembly and at least one conductor. The at least one conductor guide surface gradually slopes from a first end to a second end. The second end defines a recess.

Abstract: The present invention relates to a method and apparatus for reducing the resource utilization of the switching fabric in a SONET/SDH multiplexer by switching data on a TU level instead of byte or column level.

Abstract: A microwave combustion system is presented that can replace the conventional spark plug in an internal combustion engine. One or more microwave pulses are provided to a microwave feed in a plug that sits in the cylinder. A microwave generated plasma generated by the plug in the vicinity of a fuel mixture can provide for highly efficient combustion of the fuel-air mixture.

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract: A microwave combustion system is presented that can replace the conventional spark plug in an internal combustion engine. One or more microwave pulses are provided to a microwave feed in a plug that sits in the cylinder. A microwave generated plasma generated by the plug in the vicinity of a fuel mixture can provide for highly efficient combustion of the fuel-air mixture.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a radiation cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another radiation source.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. The manufacturing line can include a plurality of microwave cavities, each of the microwave cavities igniting and sustaining a microwave plasma. Work pieces can be shuttled between the plurality of microwave cavities on a conveyance system that controls the positioning of each of the work pieces.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.

Abstract: A method of forming a localized region of relaxed Si in a layer of strained Si arranged within a strained silicon directly on insulator (SSDOI) semiconductor substrate is provided by the invention. The strained Si layer is formed on a buried oxide (BOX) layer disposed on a Si substrate base. The method includes depositing a nitride hard mask pattern above a region of the strained Si layer in which enhanced electron mobility is desired, leaving an unmasked region within the strained Si layer, and carrying out various other processing steps to modify and relax the unmasked portion of the strained region. The method includes growing an EPI SiGe region upon the unmasked region using pre-amorphization implantation, and forming a buried amorphous SiGe region in a portion of the EPI SiGe region, and an amorphous Si region, below the amorphous SiGe region. Then, using SPE regrowth, modifying the amorphous SiGe and amorphous Si regions to realize an SPE SiGe region and relaxed SPE Si layer.

Abstract: A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such that the insulating layer bonds with the monocrystalline Si substrate. A semiconductor device includes a monocrystalline substrate, and a dielectric layer formed on the monocrystalline substrate. A semiconductor compound is formed on the dielectric layer and an elemental semiconductor material formed in proximity of the semiconductor compound and lattice-matched to the semiconductor compound.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma (615) for coating objects (250). In one embodiment, a method of coating a surface of an object (250) includes forming a plasma (615) in a cavity (230) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one coating material (510) to the plasma (615) by energizing the material (510) with, for example, a laser (500). The material (510) is allowed to deposit on the surface of the object (250) to form a coating. Various types of plasma (240) catalysts are also provided.

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Abstract: Methods and apparatus are provided for plasma-assisted gas production. In one embodiment, a gas, which includes at least one atomic or molecular species, can flow into a cavity (305). The gas can be subjected to electromagnetic radiation having a frequency less than about 333 GHz (optionally in the presence of a plasma catalyst) such that a plasma (310) forms in the cavity (305). A filter (315) capable of passing the atomic or molecular species, but preventing others from passing, can be in fluid communication with the cavity (305). In this way, the selected species can be extracted and collected, for storage or immediate use.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one dopant material to the plasma. The material is then allowed to penetrate into the substrate. Various active and passive catalysts are provided.

Abstract: A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.

Abstract: A method of cooking a food item is disclosed. The food item is placed in a microwave cavity and exposed to a microwave generated plasma. In such fashion, the food item is cooked very quickly while maintaining flavor, texture, appearance, smell, and taste.

Abstract: Methods and systems (10) for plasma-assisted nitrogen surface-treatments are provided. The method can include subjecting a gas (24) to electromagnetic radiation (26) in the presence of a plasma catalyst (100, 120, 140) to initiate a plasma containing nitrogen. The surface region of an object can be exposed to the plasma for a period of time sufficient to transfer at least some of the nitrogen from the plasma to the object through the surface region.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for synthesizing carbon structures. In one embodiment, a method is provided for synthesizing a carbon structure including forming a plasma by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst and adding at least one carbonaceous material to the plasma to grow the carbon structures on a substrate. Various types of plasma catalysts are also provided.