Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various coating processes. In one embodiment, the surface of an object can be coated by forming a plasma in a cavity by subjecting a gas to an amount of electromagnetic radiation power in the presence of a plasma catalyst and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object to form a coating. Various plasma catalysts are also provided. Coatings can include any material, for example, carbon nanotubes, BaTiO3, Cr2O3, hafnium oxide, 3Al2O3.2SiO2, Al2O3, SiAlON, MgAl2O4, TiN, and TiO2.

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Abstract: Methods and systems (10) for plasma-assisted nitrogen surface-treatments are provided. The method can include subjecting a gas (24) to electromagnetic radiation (26) in the presence of a plasma catalyst (100, 120, 140) to initiate a plasma containing nitrogen. The surface region of an object can be exposed to the plasma for a period of time sufficient to transfer at least some of the nitrogen from the plasma to the object through the surface region.

Abstract: A method for cleaning a plasma CVD reactor includes, during a cleaning cycle, (i) providing cleaning active species derived from a cleaning gas in the plasma CVD reactor, and (ii) generating a hydrogen plasma in an interior of the plasma CVD reactor to clean the interior of the reactor.

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma (615) for coating objects (250). In one embodiment, a method of coating a surface of an object (250) includes forming a plasma (615) in a cavity (230) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one coating material (510) to the plasma (615) by energizing the material (510) with, for example, a laser (500). The material (510) is allowed to deposit on the surface of the object (250) to form a coating. Various types of plasma (240) catalysts are also provided.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one dopant material to the plasma. The material is then allowed to penetrate into the substrate. Various active and passive catalysts are provided.

Abstract: A system and method of carburizing a surface region of an object includes subjecting a gas to electromagnetic radiation, generated from a radiation source (52), in the presence of a plasma catalyst (70) to initiate a plasma containing carbon. The method also includes exposing the surface region of the object to the plasma for a period of time sufficient to transfer at least some of the carbon from the plasma to the object through the first surface region.

Abstract: Methods and systems for plasma-assisted sintering are provided. The method can include initiating a sintering plasma with a cavity (12) by subjecting a gas to radiation in the presence of a plasma catalyst and exposing at least a portion of an object which can be a powdered material component to the plasma for a period of time sufficient to sinter at least a portion of the object.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for synthesizing carbon structures. In one embodiment, a method is provided for synthesizing a carbon structure including forming a plasma by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst and adding at least one carbonaceous material to the plasma to grow the carbon structures on a substrate. Various types of plasma catalysts are also provided.

Abstract: Methods and apparatus are provided for plasma-assisted gas production. In one embodiment, a gas, which includes at least one atomic or molecular species, can flow into a cavity (305). The gas can be subjected to electromagnetic radiation having a frequency less than about 333 GHz (optionally in the presence of a plasma catalyst) such that a plasma (310) forms in the cavity (305). A filter (315) capable of passing the atomic or molecular species, but preventing others from passing, can be in fluid communication with the cavity (305). In this way, the selected species can be extracted and collected, for storage or immediate use.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining plasma (615) for various coating processes. In one embodiment, the surface of an object can be coated (247) by forming plasma in a cavity (230) with walls (232) by subjecting a gas to an amount of electromagnetic radiation power via electrode (270) and a voltage supply (275) in the presence of a plasma catalyst (240) in mount (245) and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object (250) on mount (260) to form a coating (247). Various plasma catalysts are also provided.

Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

Abstract: A semiconductor device having a hollow structure includes: a substrate on which a wiring layer is formed; a low-dielectric layer with a porosity of 6% to 25% having vias and trenches and having voids between adjacent vias; and a contact layer of copper with which the vias and trenches are filled. The contact layer is in contact with the wiring layer and an upper surface of the contact layer is exposed from the dielectric layer.

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: Accordingly, the present invention provides a method of treating bronchial asthma in a subject, said method comprising the step of administering an effective amount of a 5-HT3 receptor antagonists optionally in combination with one or more pharmaceutically acceptable excipients and more particularly the present invention relates to a method of treating bronchial asthma using ondansetron, its polymorphs, its solvates or its pharmaceutically acceptable salts.