Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various doping processes. In one embodiment, a substrate (250) can be doped by forming a plasma (610) in a cavity (285) by subjecting a gas to an amount of electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one dopant material to the plasma. The material is then allowed to penetrate into the substrate. Various active and passive catalysts are provided.

Abstract: A system and method of carburizing a surface region of an object includes subjecting a gas to electromagnetic radiation, generated from a radiation source (52), in the presence of a plasma catalyst (70) to initiate a plasma containing carbon. The method also includes exposing the surface region of the object to the plasma for a period of time sufficient to transfer at least some of the carbon from the plasma to the object through the first surface region.

Abstract: Methods and systems for plasma-assisted sintering are provided. The method can include initiating a sintering plasma with a cavity (12) by subjecting a gas to radiation in the presence of a plasma catalyst and exposing at least a portion of an object which can be a powdered material component to the plasma for a period of time sufficient to sinter at least a portion of the object.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for synthesizing carbon structures. In one embodiment, a method is provided for synthesizing a carbon structure including forming a plasma by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst and adding at least one carbonaceous material to the plasma to grow the carbon structures on a substrate. Various types of plasma catalysts are also provided.

Abstract: Methods and apparatus are provided for plasma-assisted gas production. In one embodiment, a gas, which includes at least one atomic or molecular species, can flow into a cavity (305). The gas can be subjected to electromagnetic radiation having a frequency less than about 333 GHz (optionally in the presence of a plasma catalyst) such that a plasma (310) forms in the cavity (305). A filter (315) capable of passing the atomic or molecular species, but preventing others from passing, can be in fluid communication with the cavity (305). In this way, the selected species can be extracted and collected, for storage or immediate use.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining plasma (615) for various coating processes. In one embodiment, the surface of an object can be coated (247) by forming plasma in a cavity (230) with walls (232) by subjecting a gas to an amount of electromagnetic radiation power via electrode (270) and a voltage supply (275) in the presence of a plasma catalyst (240) in mount (245) and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object (250) on mount (260) to form a coating (247). Various plasma catalysts are also provided.

Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

Abstract: A semiconductor device having a hollow structure includes: a substrate on which a wiring layer is formed; a low-dielectric layer with a porosity of 6% to 25% having vias and trenches and having voids between adjacent vias; and a contact layer of copper with which the vias and trenches are filled. The contact layer is in contact with the wiring layer and an upper surface of the contact layer is exposed from the dielectric layer.

Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: Apparatus and methods for plasma-assisted melting are provided. In one embodiment, a plasma-assisted melting method can include: (1) adding a solid to a melting region, (2) forming a plasma in a cavity by subjecting a gas to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, wherein the cavity has a wall, (3) sustaining the plasma in the cavity such that energy from the plasma passes through the wall into the melting region and melts the solid into a liquid, and (4) collecting the liquid. Solids that can be melted consistent with this invention can include metals, such as metal ore and scrap metal. Various plasma catalysts are also provided.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for at least partially decrystallizing a surface of an object. In one embodiment, a method is provided for decrystallizing a surface of an object by forming a plasma (such as by subjecting a gas to an amount of electromagnetic radiation, optionally in the presence of a plasma catalyst) and exposing the surface of the object to the plasma.

Abstract: A method for manufacturing a semiconductor device includes: (i) depositing a sacrificial layer made of an organic polymer such as benzocyclobutene on a substrate having a circuit formed thereon; (ii) etching the sacrificial layer except for a portion where air gaps are to be formed; (iii) depositing a low-dielectric layer over the substrate until the portion for air gaps is entirely enclosed in the low-dielectric layer; (iv) etching the low-dielectric layer to form via holes and trenches there through; (v) prior or subsequent to step (iv), removing the portion for air gaps; and (vi) depositing copper in the vias and trenches which are filled with the copper contacting a surface of the substrate.

Abstract: Single wafer processing methods and systems for manufacturing films having low-k properties and low indices of refraction. The methods incorporate a processing station in which both curing and post-cure, in situ gas cooling take place.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a processing cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another.

Abstract: Apparatus for suppressing fluid-borne noise in a fluid conduit (12 or 12a) that includes a vibration sensor (36, 36a or 36b) for operative coupling to the conduit for providing an electrical sensor signal as a function of fluid pressure fluctuations in the conduit. A piezoelectric actuator (40, 40a or 40b) is adapted to be mounted on the conduit for imparting pressure fluctuations to fluid in the conduit. An electronic controller (38, 38a or 38b) is responsive to the sensor signal for energizing the actuator 180° out of phase with fluid pressure fluctuations sensed by the sensor. The sensor may be either closely coupled to the actuator, or separate from the actuator and disposed upstream of the actuator with respect to the direction of fluid flow through the conduit. The sensor in the preferred embodiments of the invention comprises a piezoelectric sensor, and the actuator comprises a stack of piezoelectric elements.