Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. Such treatments include cleaning and sterilizing parts. In some embodiments, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst. A part can be cleaned by, for example, inserting hydrogen into the plasma and exposing the part to the hydrogen-enriched plasma. A part can be sterilized by heating the part with the plasma.

Abstract: An atmospheric plasma processing system is presented. In accordance with embodiments of the present invention, an atmospheric pressure plasma microwave processing apparatus includes a processing area or chamber wherein parts are processed; at least one multi-mode microwave reactor coupled to receive parts for processing; at least one magnetron coupled to at least one multi-mode microwave reactor to provide microwave energy; and a delivery system coupled to at least one multi-mode microwave reactor to deliver the parts into and out of at least one reactor, wherein a plasma can be generated at atmospheric pressure and provided to the parts in at least one multi-mode microwave reactor.

Abstract: Methods and apparatus for plasma-assisted joining of one or more parts together are provided. The joining process may include, for example, placing at least first and second joining areas in proximity to one another in a cavity, forming a plasma in the cavity by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst, and sustaining the plasma at least until the first and second joining areas are joined. Plasma catalysts, and methods and apparatus for igniting, modulating, and sustaining a joining plasma, are provided. Additional cavity shapes, and methods and apparatus for selective plasma-joining, are also provided.

Abstract: The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal.

Abstract: A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The first substrate is wafer bonded onto a monocrystalline Si substrate, such that the insulating layer bonds with the monocrystalline Si substrate. A semiconductor device includes a monocrystalline substrate, and a dielectric layer formed on the monocrystalline substrate. A semiconductor compound is formed on the dielectric layer and an elemental semiconductor material formed in proximity of the semiconductor compound and lattice-matched to the semiconductor compound.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a radiation cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another radiation source.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a processing cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for at least partially decrystallizing a surface of an object. In one embodiment, a method is provided for decrystallizing a surface of an object by forming a plasma (such as by subjecting a gas to an amount of electromagnetic radiation, optionally in the presence of a plasma catalyst) and exposing the surface of the object to the plasma.

Abstract: Apparatus and methods for plasma-assisted melting are provided. In one embodiment, a plasma-assisted melting method can include: (1) adding a solid to a melting region, (2) forming a plasma in a cavity by subjecting a gas to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, wherein the cavity has a wall, (3) sustaining the plasma in the cavity such that energy from the plasma passes through the wall into the melting region and melts the solid into a liquid, and (4) collecting the liquid. Solids that can be melted consistent with this invention can include metals, such as metal ore and scrap metal. Various plasma catalysts are also provided.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. The manufacturing line can include a plurality of microwave cavities, each of the microwave cavities igniting and sustaining a microwave plasma. Work pieces can be shuttled between the plurality of microwave cavities on a conveyance system that controls the positioning of each of the work pieces.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. Such treatments include cleaning and sterilizing parts. In some embodiments, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst. A part can be cleaned by, for example, inserting hydrogen into the plasma and exposing the part to the hydrogen-enriched plasma. A part can be sterilized by heating the part with the plasma.

Abstract: Methods and apparatus are provided for plasma-assisted engine exhaust treatment. In one embodiment, an engine exhaust treatment system includes at least one conduit with an inlet portion (215), an outlet portion (216), an intermediate portion (205), and at least one plasma cavity (210). The inlet portion is configured to connect to an engine block (510) and receive an exhaust gas. The outlet portion emits the exhaust gas after plasma treatment. The intermediate portion conveys the exhaust gas from the inlet portion to the outlet portion. In one embodiment, one or more plasma cavities (342, 344, 346) are located proximate to the inlet portion for treating the exhaust gas. The system also includes an electromagnetic radiation source (340) connected to the cavities for supplying radiation to the cavities, wherein the radiation has a frequency less than about 333 GHz. Exhaust gas treatments that use plasma catalysts (70, 170) are also provided.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various coating processes. In one embodiment, the surface of an object can be coated by forming a plasma in a cavity by subjecting a gas to an amount of electromagnetic radiation power in the presence of a plasma catalyst and adding at least one coating material to the plasma. The material is allowed to deposit on the surface of the object to form a coating. Various plasma catalysts are also provided. Coatings can include any material, for example, carbon nanotubes, BaTiO3, Cr2O3, hafnium oxide, 3Al2O3.2SiO2, Al2O3, SiAlON, MgAl2O4, TiN, and TiO2.

Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Abstract: Methods and systems (10) for plasma-assisted nitrogen surface-treatments are provided. The method can include subjecting a gas (24) to electromagnetic radiation (26) in the presence of a plasma catalyst (100, 120, 140) to initiate a plasma containing nitrogen. The surface region of an object can be exposed to the plasma for a period of time sufficient to transfer at least some of the nitrogen from the plasma to the object through the surface region.

Abstract: A method for cleaning a plasma CVD reactor includes, during a cleaning cycle, (i) providing cleaning active species derived from a cleaning gas in the plasma CVD reactor, and (ii) generating a hydrogen plasma in an interior of the plasma CVD reactor to clean the interior of the reactor.

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.