Abstract: Various embodiments of methods and systems for temperature compensated memory refresh (“TCMR”) of a dynamic random access memory (“DRAM”) component are disclosed. Embodiments of the solution leverage a memory refresh module located within a memory subsystem to apply a refresh power supply received from a source on the SoC. Advantageously, even though the refresh power supply is received from a source on the SoC according to a certain delivery rate that may not be optimal for each and every bank in the DRAM component, embodiments of the solution are able to apply an effective refresh power supply rate to each bank according to its optimal cycle.

Abstract: Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.

Abstract: Systems and methods are disclosed for providing memory channel interleaving with selective power or performance optimization. One such method comprises configuring a memory address map for two or more memory devices accessed via two or more respective memory channels with an interleaved region and a linear region. The interleaved region comprises an interleaved address space for relatively higher performance tasks, and the linear region comprises a linear address space for relatively lower power tasks. A boundary is defined between the linear region and the interleaved region using a sliding threshold address. A request is received from a process for a virtual memory page. The request comprises a preference for power savings or performance. The virtual memory page is assigned to a free physical page in the linear region or the interleaved region based on the preference for power savings or performance using the sliding threshold address.

Abstract: Systems and methods are disclosed for providing memory channel interleaving with selective power or performance optimization. One such method comprises configuring a memory address map for two or more memory devices accessed via two or more respective memory channels with an interleaved region and a linear region. The interleaved region comprises an interleaved address space for relatively higher performance tasks. The linear region comprises a linear address space for relatively lower power tasks. A request is received from a process for a virtual memory page. The request comprises a preference for power savings or performance. The virtual memory page is assigned to a free physical page in the linear region or the interleaved region according to the preference for power savings or performance.

Abstract: Systems and methods are disclosed for providing memory channel interleaving with selective power or performance optimization. One such method comprises configuring a memory address map for two or more memory devices accessed via two or more respective memory channels. The memory address map comprises one or more interleaved blocks and a plurality of linear blocks. Each interleaved block comprises an interleaved address space for relatively higher performance tasks, and each linear block comprises a linear address space for relatively lower power tasks. A request is received from a process for a virtual memory page. The request comprises a preference for power savings or performance. If the preference is for power savings, the virtual memory page is mapped to a physical page in a concatenated linear block.

Abstract: In a repair of a random access memory (RAM), an error information is received, a fail address of the RAM identified, and a one-time programming applied to a portion of the redundancy circuit while a content of the RAM is valid. Optionally, the RAM is a dynamic access RAM (DRAM), a refresh burst is applied to the DRAM, followed by a non-refresh interval, and the one-time programming is performed during the non-refresh interval.

Abstract: Systems, methods, and computer programs are disclosed for allocating memory in a portable computing device having a non-uniform memory architecture. One embodiment of a method comprises: receiving from a process executing on a first system on chip (SoC) a request for a virtual memory page, the first SoC electrically coupled to a second SoC via an interchip interface, the first SoC electrically coupled to a first local volatile memory device via a first high-performance bus and the second SoC electrically coupled to a second local volatile memory device via a second high-performance bus; determining a free physical page pair comprising a same physical address available on the first and second local volatile memory devices; and mapping the free physical page pair to a single virtual page address.

Abstract: Systems, methods, and computer programs, embodied in or as a memory management module, are disclosed for thermally controlling memory to increase its performance. One exemplary embodiment includes a memory, one or more processors, and a thermoelectric cooling device. The one or more processors access the memory via a memory controller electrically coupled to the memory. The thermoelectric cooling device is configured to thermally control the memory in response to a predicted change in temperature of the memory.

Abstract: Systems, methods, and computer programs are disclosed for providing compressed data storage using non-power-of-two flash cell mapping. One embodiment of a method comprises receiving one or more compressed logical pages to be stored in a NAND flash memory. Binary data in the one or more logical pages is transformed to a quinary representation. The quinary representation comprises a plurality of quinary bits. A binary representation of each of the plurality of quinary bits is transmitted to the NAND flash memory. The binary representation of each of the plurality of quinary bits is converted to a quinary voltage for a corresponding cell in a physical page in the NAND flash memory.

Abstract: Methods and apparatuses for memory power reduction are provided. The apparatus determines whether to store data into a DRAM or an NVRAM during an idle state of a processor based on power consumption by the DRAM in association with refreshing the data in the DRAM and use of the data stored in the DRAM by the processor, based on power consumption by the NVRAM in association with use of the data stored in the NVRAM by the processor, and based on a duty cycle associated with current drawn in a first power state and a second power state in association with the data. The NVRAM is a type of non-volatile random-access memory other than flash memory. The processor stores the data into one of the DRAM or the NVRAM based on the determination whether to store the data in the DRAM or the NVRAM.

Abstract: Systems, methods, and computer programs are disclosed for allocating memory in a portable computing device having a non-uniform memory architecture.

Abstract: Systems, methods, and computer programs are disclosed for providing compressed data storage using non-power-of-two flash cell mapping. One embodiment of a method comprises receiving one or more compressed logical pages to be stored in a NAND flash memory. Binary data in the one or more logical pages is transformed to a quinary representation. The quinary representation comprises a plurality of quinary bits. A binary representation of each of the plurality of quinary bits is transmitted to the NAND flash memory. The binary representation of each of the plurality of quinary bits is converted to a quinary voltage for a corresponding cell in a physical page in the NAND flash memory.

Abstract: Systems, methods, and computer programs are disclosed for providing error detection or correction with flash cell mapping. One embodiment is a method comprising generating raw page data for a physical page in a main array of a flash memory device. The raw page data comprises less than a capacity of the physical page generated using a non-power-of-two flash cell mapping. One or more parity bits are generated for the raw page data using an error detection or correction scheme. The method stores the raw page data and the one or more parity bits in the physical page in the main array.

Abstract: Systems, methods, and computer programs are disclosed for recovering from dynamic random access memory (DRAM) defects. One method comprises determining that an uncorrected bit error has occurred for a physical codeword address associated with a dynamic random access memory (DRAM) device coupled to a system on chip (SoC). A kernel page associated with a DRAM page comprising the physical codeword address is identified as a bad page. Recovery from the uncorrected bit error is provided by rebooting a system comprising the SoC and the DRAM device. In response to the rebooting, the identified kernel page is excluded from being allocated for DRAM operation.

Abstract: Methods and systems for an in-system repair process that repairs or attempts to repair random bit failures in a memory device are provided. In some examples, an in-system repair process may select alternative steps depending on whether the failure is correctable or uncorrectable. In these examples, the process uses communications between a system on chip and the memory to fix the failures during normal operation.

Abstract: Methods and apparatuses for memory power reduction are provided. The apparatus determines whether to store data into a DRAM or an NVRAM during an idle state of a processor based on power consumption by the DRAM in association with refreshing the data in the DRAM and use of the data stored in the DRAM by the processor, based on power consumption by the NVRAM in association with use of the data stored in the NVRAM by the processor, and based on a duty cycle associated with current drawn in a first power state and a second power state in association with the data. The NVRAM is a type of non-volatile random-access memory other than flash memory. The processor stores the data into one of the DRAM or the NVRAM based on the determination whether to store the data in the DRAM or the NVRAM.

Abstract: Systems, methods, and computer programs are disclosed for providing a heterogeneous system memory in a portable communication device. One system comprises a system on chip (SoC) coupled to a nonvolatile random access memory (NVRAM) and a volatile random access memory (VRAM). The SoC comprises an operating system for mapping a heterogeneous system memory comprising the NVRAM and the VRAM. The operating system comprises a memory manager configured to allocate a first portion of the NVRAM as a block device for a swap operation, a second portion of the NVRAM for program code and read-only data, and a third portion of the NVRAM for operating system page tables. The VRAM is allocated for a program heap and a program stack.

Abstract: A memory having a redundancy area is operated in a normal mode and an error is detected. A selecting selects between in-line repair process and off-line repair. In-line repair applies a short term error correction, which remaps a fail address to a remapped memory area of the memory. An in-system repair is applied, for a one-time programmed remapping of the fail address to a redundancy area of the memory. In-system repair utilizes idle time of the memory to maintain valid memory content.

Abstract: A system and method of refreshing dynamic random access memory (DRAM) are disclosed. A device includes a DRAM, a bus, and a system-on-chip (SOC) coupled via the bus to the DRAM. The SOC is configured to refresh the DRAM at a particular refresh rate based on a temperature of the DRAM and based on calibration data determined based on one or more calibration tests performed while the SOC is coupled to the DRAM.

Abstract: A system and method of refreshing dynamic random access memory (DRAM) are disclosed. A device includes a DRAM, a bus, and a system-on-chip (SOC) coupled via the bus to the DRAM. The SOC is configured to refresh the DRAM at a particular refresh rate based on a temperature of the DRAM and based on calibration data determined based on one or more calibration tests performed while the SOC is coupled to the DRAM.