Abstract: The present disclosure relates to method and apparatuses for filling a gap on a substrate. The method comprises providing a substrate, which comprises at least one gap into a reaction chamber, depositing a silicon containing first layer onto the substrate; subjecting the first layer to a phosphorous containing compound to form a flowable intermediate material, which at least partially fills the at least one gap on the substrate; and forming a solid material comprising silicon.

Abstract: A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

Abstract: A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

Abstract: A method and system for depositing a material on one or more substrates by atomic layer deposition. The method comprising a step of performing a pulse (1) of a precursor of said material, wherein at least one of the average flow rate (f) and the average partial pressure (r) of said precursor over a first half (2) of the pulse (1) is higher than over a second half (3) of the pulse (1).

Abstract: A substrate processing system and a method for forming a layer on one or more substrates is disclosed. Embodiments, of the recently described substrate processing system comprise a process chamber, a precursor storage module, a pump, a pump valve and a controller configured to control the provision of the precursor flow to the process chamber.

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.

Abstract: A vapor phase precursor delivery system for delivering a vapor phase precursor for depositing a layer in a vapor phase deposition apparatus is disclosed. The vapor phase precursor delivery system having: a plurality of vessels constructed and arranged to store and vaporize the same precursor; and a gas inlet and a gas outlet operably connected with one or more of the plurality of vessels. A vapor phase deposition apparatus, such as for example a vertical furnace may have such a vapor phase precursor delivery system for depositing a layer on a substrate.

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Abstract: The current disclosure relates to methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Abstract: A method and system for depositing a material on one or more substrates by atomic layer deposition. The method comprising a step of performing a pulse (1) of a precursor of said material, wherein at least one of the average flow rate (f) and the average partial pressure (r) of said precursor over a first half (2) of the pulse (1) is higher than over a second half (3) of the pulse (1).

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Abstract: A wafer boat and a method for forming a layer on a plurality of substrates that are provided in the wafer boat is disclosed. Aspects of the presently described wafer boat comprise at least two wafer boat rods, each of which including at least a first set of slots for holding a plurality of substrates. The wafer boat further includes a plurality of plates, whereby at least one slot of the at least first set of slots is provided in between two neighboring plates.

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.

Abstract: A method for forming a silicon-comprising layer on a substrate may comprise providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace. A repetitive deposition cycle is performed. The deposition cycle comprises a first deposition pulse and a second deposition pulse comprising a provision, into the process chamber, of a first precursor and a second precursor, respectively. The deposition cycle further comprises a first purge pulse and a second purge pulse for removing, from the process chamber, a portion of the first precursor and a portion of the second precursor, respectively. The process chamber is maintained, during the deposition cycle, at a process temperature in a range from about 400° C. to about 650° C. and at a first pressure being different from a second pressure, during the first deposition pulse and during the second deposition pulse, respectively.

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Abstract: A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.