Patents by Inventor Dieter Pierreux
Dieter Pierreux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180286672Abstract: Amorphous silicon-filled gaps may be formed having no or a low occurrence of voids in the amorphous silicon fill, while maintaining a smooth exposed silicon surface. A gap in a substrate may be filled with amorphous silicon by heating the substrate to a deposition temperature between 300 and 500° C. and providing a feed gas that comprises a first silicon reactant to deposit an amorphous silicon film into the gap with an hydrogen concentration between 0.1 and 10 at. %. The deposited silicon film may subsequently be annealed. After the anneal, any voids may be reduced in size and this reduction in size may occur to such an extent that the voids may be eliminated.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Inventors: Steven R.A. Van Aerde, Kelly Houben, Maarten Stokhof, Bert Jongbloed, Dieter Pierreux
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Publication number: 20180286679Abstract: The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.Type: ApplicationFiled: March 31, 2017Publication date: October 4, 2018Inventors: Kelly Houben, Steven R.A. Van Aerde, Maarten Stokhof, Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Patent number: 10056249Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: November 22, 2016Date of Patent: August 21, 2018Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Publication number: 20180171475Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.Type: ApplicationFiled: December 15, 2016Publication date: June 21, 2018Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt De Roest, Bert Jongbloed, Dieter Pierreux
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Publication number: 20180122959Abstract: A semiconductor device and method for manufacturing the semiconductor device are disclosed. Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.Type: ApplicationFiled: October 6, 2017Publication date: May 3, 2018Inventors: Pauline Calka, Qi Xie, Dieter Pierreux, Bert Jongbloed
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Patent number: 9916980Abstract: A method of forming a layer on a substrate is provided by providing the substrate with a hardmask material. The hardmask material is infiltrated with infiltration material during N infiltration cycles by: a) providing a first precursor to the hardmask material on the substrate in the reaction chamber for a first period T1; b) removing a portion of the first precursor for a second period T2; and, c) providing a second precursor to the hardmask material on the substrate for a third period T3, allowing the first and second precursor to react with each other forming the infiltration material.Type: GrantFiled: December 15, 2016Date of Patent: March 13, 2018Assignee: ASM IP Holding B.V.Inventors: Werner Knaepen, Jan Willem Maes, Bert Jongbloed, Krzysztof Kamil Kachel, Dieter Pierreux, David Kurt De Roest
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Patent number: 9887082Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: GrantFiled: July 28, 2016Date of Patent: February 6, 2018Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Publication number: 20180033606Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.Type: ApplicationFiled: July 28, 2016Publication date: February 1, 2018Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
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Patent number: 9837281Abstract: A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates.Type: GrantFiled: May 25, 2016Date of Patent: December 5, 2017Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Patent number: 9812320Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.Type: GrantFiled: July 28, 2016Date of Patent: November 7, 2017Assignee: ASM IP Holding B.V.Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde, Suvi Haukka, Atsuki Fukuzawa, Hideaki Fukuda
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Patent number: 9799509Abstract: A process for depositing aluminum oxynitride (AlON) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to an oxygen precursor to form AlON. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to an oxygen precursor together constitute an AlON deposition cycle. A plurality of AlON deposition cycles may be performed to deposit an AlON film of a desired thickness. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.Type: GrantFiled: November 26, 2014Date of Patent: October 24, 2017Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Publication number: 20170213732Abstract: An etch stop layer comprises a metal oxide comprising a metal selected from the group consisting of metals of Group 4 of the periodic table, metals of Group 5 of the periodic table, metals of Group 6 of the periodic table, and yttrium. The metal oxide forms exceptionally thin layers that are resiatant to ashing and HF exposure. Subjecting the etch stop layer to both ashing and HF etch processes removes less than 0.3 nm of the thickness of the etch stop layer, and more preferably less than 0.25 nm. The etch stop layer may be thin and may have a thickness of about 0.5-2 nm. In some embodiments, the etch stop layer comprises tantalum oxide (TaO).Type: ApplicationFiled: January 24, 2017Publication date: July 27, 2017Inventors: Dieter Pierreux, Werner Knaepen, Bert Jongbloed
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Patent number: 9711351Abstract: In some embodiments, a nitride film is provided over a semiconductor substrate and densified. The nitride film may be a flowable nitride, which may be deposited to at least partially fill openings in the substrate. Densifying the film is accomplished without exposing the nitride film to plasma by exposing the nitride film to a non-plasma densifying agent in the process chamber. The non-plasma densifying agent may be a nitriding gas, a hydrogen scavenging gas, a silicon precursor, or a combination thereof.Type: GrantFiled: August 19, 2015Date of Patent: July 18, 2017Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux
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Publication number: 20170140918Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: ApplicationFiled: November 22, 2016Publication date: May 18, 2017Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 9576790Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.Type: GrantFiled: April 14, 2015Date of Patent: February 21, 2017Assignee: ASM IP HOLDING B.V.Inventors: Viljami J. Pore, Yosuke Kimura, Kunitoshi Namba, Wataru Adachi, Hideaki Fukuda, Werner Knaepen, Dieter Pierreux, Bert Jongbloed
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Patent number: 9552979Abstract: A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.Type: GrantFiled: May 31, 2013Date of Patent: January 24, 2017Assignee: ASM IP HOLDING B.V.Inventors: Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Peter Zagwijn, Hessel Sprey, Cornelius A. van der Jeugd, Marinus Josephus de Blank, Robin Roelofs, Qi Xie, Jan Willem Maes
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Publication number: 20170011910Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.Type: ApplicationFiled: August 18, 2016Publication date: January 12, 2017Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Herbert Terhorst, Lucian Jdira, Radko G. Bankras, Theodorus G.M. Oosterlaken
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Patent number: 9514934Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: March 13, 2015Date of Patent: December 6, 2016Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David De Roest, Dieter Pierreux, Kees Van Der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Publication number: 20160307766Abstract: A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates.Type: ApplicationFiled: May 25, 2016Publication date: October 20, 2016Inventors: Bert Jongbloed, Dieter Pierreux, Werner Knaepen
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Patent number: 9431238Abstract: In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.Type: GrantFiled: May 21, 2015Date of Patent: August 30, 2016Assignee: ASM IP HOLDING B.V.Inventors: Bert Jongbloed, Dieter Pierreux, Cornelius A. van der Jeugd, Herbert Terhorst, Lucian Jdira, Radko G. Bankras, Theodorus G. M. Oosterlaken