Abstract: Integrated circuit packages with multiple integrated circuit dies are provided. A multichip package may include a master die that is coupled to one or more slave dies via inter-die package interconnects. A mixed (i.e., active and passive) interconnect redundancy scheme may be implemented to help repair potentially faulty interconnects to improve assembly yield. Interconnects that carry normal user signals may be repaired using an active redundancy scheme by selectively switching into use a spare driver block when necessary. On the other hand, interconnects that carry power-on-reset signals, initialization signals, and other critical control signals for synchronizing the operation between the master and slave dies may be supported using a passive redundancy scheme by using two or more duplicate wires for each critical signal.

Abstract: Integrated circuit packages with multiple integrated circuit dies are provided. A multichip package may include a master die that is coupled to one or more slave dies via inter-die package interconnects. A mixed (i.e., active and passive) interconnect redundancy scheme may be implemented to help repair potentially faulty interconnects to improve assembly yield. Interconnects that carry normal user signals may be repaired using an active redundancy scheme by selectively switching into use a spare driver block when necessary. On the other hand, interconnects that carry power-on-reset signals, initialization signals, and other critical control signals for synchronizing the operation between the master and slave dies may be supported using a passive redundancy scheme by using two or more duplicate wires for each critical signal.

Abstract: The present embodiments relate to clock-data phase alignment circuitry in source-synchronous interface circuits. Source-synchronous interface standards require the transmission and reception of a clock signal that is transmitted separately from the data signal. On the receiver side, the clock signal must be phase shifted relative to the data signal to enable the capture of the data. Clock-data phase alignment circuitry is presented that may receive a differential clock with complementary clock signals CLK_P and CLK_N. An adjustable delay circuit and clock distribution network may delay clock signal CLK_P and provide the delayed clock signal to a storage circuit that may store the data signal. A replica clock distribution network and a replica adjustable delay circuit may form a feedback path and provide the delayed first clock signal back to clock phase adjustment circuitry which may control the adjustment of the adjustable delay circuit and the replica adjustable delay circuit.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: One embodiment relates to an apparatus for data communication between at least two in-package semiconductor dies. On the first semiconductor die in a package, a digital-to-analog converter (DAC) converts a plurality of binary signals to an analog signal. The analog signal is transmitted through a silicon bridge to a second semiconductor die. Another embodiment relates to a method of data communication between at least two in-package semiconductor dies. A plurality of binary signals is converted to an analog signal by a digital-to-analog converter on a first semiconductor die. The analog signal is transmitted through a silicon bridge to a second semiconductor die. Other embodiments, aspects and features are also disclosed.

Abstract: One embodiment relates to an apparatus for data communication between at least two in-package semiconductor dies. On the first semiconductor die in a package, a digital-to-analog converter (DAC) converts a plurality of binary signals to an analog signal. The analog signal is transmitted through a silicon bridge to a second semiconductor die. Another embodiment relates to a method of data communication between at least two in-package semiconductor dies. A plurality of binary signals is converted to an analog signal by a digital-to-analog converter on a first semiconductor die. The analog signal is transmitted through a silicon bridge to a second semiconductor die. Other embodiments, aspects and features are also disclosed.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: Integrated circuit packages with multiple integrated circuit dies are provided. A multichip package may include a master die that is coupled to one or more slave dies via inter-die package interconnects. A mixed (i.e., active and passive) interconnect redundancy scheme may be implemented to help repair potentially faulty interconnects to improve assembly yield. Interconnects that carry normal user signals may be repaired using an active redundancy scheme by selectively switching into use a spare driver block when necessary. On the other hand, interconnects that carry power-on-reset signals, initialization signals, and other critical control signals for synchronizing the operation between the master and slave dies may be supported using a passive redundancy scheme by using two or more duplicate wires for each critical signal.

Abstract: An integrated circuit system, and a method of manufacture thereof, includes an integrated circuit package connected to a package interconnect connectible to an external resistor, wherein the integrated circuit package includes a master integrated circuit and a slave integrated circuit, the master integrated circuit is connectible to the external resistor and the slave integrated circuit, the master integrated circuit includes a master constant current and a slave constant current, the master constant current flows through the external resistor, and the slave constant current is based on the master constant current.

Abstract: The present invention discloses activated carbon-metal organic framework composite materials (AC@MOF) with enhanced gas adsorption capacity. The present invention also discloses a process for the preparation of carbon-metal organic framework composite materials (AC@MOF). The present invention involves the use of “void space filling method” in metal organic frameworks (MOFs), which have been accomplished by in-situ addition of selected type and appropriate amount of activated carbon during the synthesis of MOF such as Cu-BTC, in the storage of gases such as methane. The gas adsorption capacity of these AC@MOF composite materials is significantly increased through this method.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: The present invention discloses activated carbon-metal organic framework composite materials (AC@MOF) with enhanced gas adsorption capacity. The present invention also discloses a process for the preparation of carbon-metal organic framework composite materials (AC@MOF). The present invention involves the use of “void space filling method” in metal organic frameworks (MOFs), which have been accomplished by in-situ addition of selected type and appropriate amount of activated carbon during the synthesis of MOF such as Cu-BTC, in the storage of gases such as methane. The gas adsorption capacity of these AC@MOF composite materials is significantly increased through this method.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface.

Abstract: A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface.

Abstract: A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.