Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A data buffer with a strobe-based primary interface and a strobe-less secondary interface used on a memory module is described. One memory module includes an address buffer, the data buffer and multiple dynamic random-access memory (DRAM) devices. The address buffer provides a timing reference to the data buffer and to the DRAM devices for one or more transactions between the data buffer and the DRAM devices via the strobe-less secondary interface.

Abstract: The present invention discloses activated carbon-metal organic framework composite materials (AC@MOF) with enhanced gas adsorption capacity. The present invention also discloses a process for the preparation of carbon-metal organic framework composite materials (AC@MOF). The present invention involves the use of “void space filling method” in metal organic frameworks (MOFs), which have been accomplished by in-situ addition of selected type and appropriate amount of activated carbon during the synthesis of MOF such as Cu-BTC, in the storage of gases such as methane. The gas adsorption capacity of these AC@MOF composite materials is significantly increased through this method.

Abstract: A duty-cycle correction circuit calibrates the duty cycle of a periodic input signal. The correction circuit includes a state machine that samples the input signal using a sample signal of a sample period. The sample period is selected to scan a period of the input signal over a number of sample periods. The resultant difference between the number of high and low samples provides a measure of the duty cycle deviation from e.g. 50%. An adjustable delay circuit adjusts the relative timing of the rising and falling edges of the input signal, and thus the duty cycle, responsive to the measure of duty cycle.