Abstract: The system described herein relates to a high-voltage supply unit for providing an output voltage for a particle beam apparatus, wherein the particle beam apparatus is embodied as, for example, an electron beam apparatus and/or an ion beam apparatus. The system described herein is based on the fact that it was recognized that a bipolar voltage supply unit can be formed by means of a unipolar first current source and a unipolar second current source, said bipolar voltage supply unit enabling a load current in two directions. The high-voltage supply unit according to the system described herein can be operated in the 4-quadrant operation. In the 4-quadrant operation, a first voltage source for supplying the first current source and a second voltage source for supplying the second current source are embodied as different voltage sources.

Abstract: The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.

Abstract: A method for operating a particle beam microscope includes: setting a potential of a particle source; setting a potential of an object; directing a particle beam onto the object; focusing the particle beam using a particle-optical lens; providing a dependence between a value of an excitation of the particle-optical lens and a value of the potential of the object; changing a manipulated variable with the aid of an actuating element actuatable by a user; and setting the excitation of the particle-optical lens in a manner dependent on the manipulated variable. In a first mode of operation, the potential of the object is set on the basis of the excitation of the particle-optical lens in accordance with the dependence between the value of the excitation of the particle-optical lens and the value of the potential of the object.

Abstract: The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.

Abstract: An analysis device, possibly having an electrostatic and/or magnetic lens, analyzes the energy of charged particles and has an opposing field grid device to which a voltage is applied in such a way that a portion of the charged particles is reflected by the opposing field grid device. Another portion of the charged particles passes through the opposing field grid device and is detected by a detector. The opposing field grid device has a curvature. A center of curvature is an intersection point of an optical axis with the opposing field grid device. The curvature has a radius of curvature which is given by the section between the center of curvature and a starting point on the optical axis. The opposing field grid device is curved in the direction of the starting point as viewed from the center of curvature and/or is arranged to be displaceable along the optical axis.

Abstract: The system described herein relates to a high-voltage supply unit for providing an output voltage for a particle beam apparatus, wherein the particle beam apparatus is embodied as, for example, an electron beam apparatus and/or an ion beam apparatus. The system described herein is based on the fact that it was recognized that a bipolar voltage supply unit can be formed by means of a unipolar first current source and a unipolar second current source, said bipolar voltage supply unit enabling a load current in two directions. The high-voltage supply unit according to the system described herein can be operated in the 4-quadrant operation. In the 4-quadrant operation, a first voltage source for supplying the first current source and a second voltage source for supplying the second current source are embodied as different voltage sources.

Abstract: A method for operating a particle beam microscope includes: setting potentials of a particle source and an object; directing a particle beam onto the object; setting an excitation of a particle-optical lens; generating a dependence between a manipulated variable and the excitation so that the excitation is representable as a monotonic function dependent on the manipulated variable; changing the manipulated variable via an actuating element to focus the particle beam at the object; and determining a target value of the manipulated variable in a manner dependent on the set potentials. The target value virtually corresponds to an ideal excitation of the lens. The particle beam in the case of the ideal excitation is focused at the object. The absolute value of the first derivative of the function in a value range containing the target value is less than in the case of values lying outside of this value range.

Abstract: A method for operating a particle beam microscope includes: setting a potential of a particle source; setting a potential of an object; directing a particle beam onto the object; focusing the particle beam using a particle-optical lens; providing a dependence between a value of an excitation of the particle-optical lens and a value of the potential of the object; changing a manipulated variable with the aid of an actuating element actuatable by a user; and setting the excitation of the particle-optical lens in a manner dependent on the manipulated variable. In a first mode of operation, the potential of the object is set on the basis of the excitation of the particle-optical lens in accordance with the dependence between the value of the excitation of the particle-optical lens and the value of the potential of the object.

Abstract: A particle beam device comprises a beam generator for generating a particle beam having charged particles and an electrode unit having a first electrode and a second electrode, wherein the first electrode interacts with the second electrode, in particular for guiding, shaping, aligning or correcting the particle beam. Moreover, the particle beam device comprises a low-pass filter being connected with at least one of: the first electrode and the second electrode, using an electrical connection. Additionally, the particle beam device comprises a mounting unit having an opening for the passage of the particle beam, wherein the at least one low-pass filter, the first electrode and the second electrode are arranged at the mounting unit. The electrode unit may comprise more than two electrodes, for example up to 16 electrodes.

Abstract: An apparatus for focusing and for storage of ions and an apparatus for separation of a first pressure area from a second pressure area are disclosed, in particular for an analysis apparatus for ions. A particle beam device may have at least one of the abovementioned apparatuses. A container for holding ions and at least one multipole unit are provided. The multipole unit has a through-opening with a longitudinal axis as well as a multiplicity of electrodes. A first set of the electrodes is at a first radial distance from the longitudinal axis. A second set of the electrodes is in each case at a second radial distance from the longitudinal axis. The first radial distance is less than the second radial distance. Alternatively or additionally, the apparatus may have an elongated opening with a radial extent. The opening has a longitudinal extent which is greater than the radial extent.

Abstract: An apparatus for focusing and for storage of ions and an apparatus for separation of a first pressure area from a second pressure area are disclosed, in particular for an analysis apparatus for ions. A particle beam device may have at least one of the abovementioned apparatuses. A container for holding ions and at least one multipole unit are provided. The multipole unit has a through-opening with a longitudinal axis as well as a multiplicity of electrodes. A first set of the electrodes is at a first radial distance from the longitudinal axis. A second set of the electrodes is in each case at a second radial distance from the longitudinal axis. The first radial distance is less than the second radial distance. Alternatively or additionally, the apparatus may have an elongated opening with a radial extent. The opening has a longitudinal extent which is greater than the radial extent.

Abstract: An SACP method includes directing a beam of charged particles onto an object surface of an object using a particle optical system, and detecting intensities of particles emanating from the object. The method further includes: (a1) adjusting an excitation of the second beam deflector for adjusting an impingement location of the beam on the object surface; (a2) adjusting an excitation of the first beam deflector for adjusting an angle of incidence of the beam on the object surface without changing the impingement location and detecting the intensity; and (a3) repeating the adjusting of the excitation of the first beam deflector for adjusting the angle of incidence without changing the impingement location such that a corresponding intensity is detected for each of at least 100 different angles of incidence at the same impingement location.

Abstract: A charged particle beam system includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: A particle beam microscope comprises a magnetic lens 3 having an optical axis 53 and a pole piece 21. An object 5 to be examined is mounted at a point of intersection 51 between an optical axis 53 and the object plane 19. First and second X-ray detectors 33 have first and second radiation-sensitive substrates 35 arranged such that a first elevation angle ?1 between a first straight line 551 extending through the point of intersection 51 and a center of the first substrate 351 and the object plane 19 differs from a second elevation angle ?2 between a second straight line 552 extending through the point of intersection 51 and a center of the second substrate 352 and the object plane 19 by more than 14°.

Abstract: A device for deflecting a particle beam out of a beam axis, or for guiding a particle beam into the beam axis, has a simple design, requires little space, and additionally ensures that no area of an object that is not to be struck is struck by a particle beam. The device may include components in the following sequence along the beam axis: first deflection element, a magnetic apparatus for providing a magnetic field axially to the beam axis, and a second deflection element. A particle beam apparatus may have a device of this type.

Abstract: A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Abstract: A particle beam microscope comprises a magnetic lens 3 having an optical axis 53 and a pole piece 21. An object 5 to be examined is mounted at a point of intersection 51 between an optical axis 53 and the object plane 19. First and second X-ray detectors 33 have first and second radiation-sensitive substrates 35 arranged such that a first elevation angle ?1 between a first straight line 551 extending through the point of intersection 51 and a center of the first substrate 351 and the object plane 19 differs from a second elevation angle ?2 between a second straight line 552 extending through the point of intersection 51 and a center of the second substrate 352 and the object plane 19 by more than 14°.

Abstract: A particle beam microscope comprises a magnetic lens 3 having an optical axis 53 and a pole piece 21. An object 5 to be examined is mounted at a point of intersection 51 between an optical axis 53 and the object plane 19. First and second X-ray detectors 33 have first and second radiation-sensitive substrates 35 arranged such that a first elevation angle ?1 between a first straight line 551 extending through the point of intersection 51 and a centre of the first substrate 351 and the object plane 19 differs from a second elevation angle ?2 between a second straight line 552 extending through the point of intersection 51 and a centre of the second substrate 352 and the object plane 19 by more than 14°.

Abstract: A system is provided for focusing a particle beam onto an irradiation position on a surface of an object and for imaging and/or processing the surface. The described system is based on the consideration that the focusing of a particle beam generated in the particle beam device onto the surface of an object is intended to be effected in a manner dependent on the height profile of the surface. Accordingly, parameters for setting the focusing in a manner dependent on the height profile of the surface should be chosen. During scanning of the particle beam over the surface of the object, the focusing for each scanning point is set using the parameters in such a way that the best possible focusing can be achieved. In order to achieve this, the described system provides for taking account of the height profile of the surface of the object when choosing the parameters.

Abstract: Methods are disclosed that include exposing, in direct succession, portions of a surface of a sample to a charged particle beam, the portions of the surface of the sample forming a row in a first direction, the charged particle beam having an average spot size f at the surface of the sample, each portion being spaced from its neighboring portions by a distance of at least d in the first direction, and a ratio d/f being 2 or more.