Abstract: A particle optical arrangement providing an electron microscopy system 3 and an ion beam processing system 7 comprises an objective lens 43 of the electron microscopy system having an annular electrode 59 being a component of the electron microscopy system arranged closest to a position 11 of an object to be examined. Between the annular electrode and a principal axis 9 of the ion beam processing system 7 a shielding electrode 81 is arranged.

Abstract: A particle beam device includes a particle beam generator, an objective lens, and first and second deflection systems for deflecting the particle beam in an object plane defined by the objective lens. In a first operating mode, the first deflection system generates a first deflection field and the second deflection system generates a second deflection field. In a second operating mode, the first deflection system generates a third deflection field and the second deflection system generates a fourth deflection field.

Abstract: A charged particle beam column includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: A charged particle beam system includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: A particle optical apparatus has a particle source for generating at least one beam of charged particles, and a magnet arrangement having two pole plates, which are arranged spaced apart from one another, such that the at least one beam of charged particles in operation passes through the pole plates, wherein trenches are provided in the pole plates, in which trenches coil wires are arranged. The trenches, when viewed in a cross section transverse to an extension direction of the trenches, have a smaller width in a region of a surface of the pole plates, than in a region arranged at a distance from the surface.

Abstract: An apparatus for focusing and for storage of ions and an apparatus for separation of a first pressure area from a second pressure area are disclosed, in particular for an analysis apparatus for ions. A particle beam device may have at least one of the abovementioned apparatuses. A container for holding ions and at least one multipole unit are provided. The multipole unit has a through-opening with a longitudinal axis as well as a multiplicity of electrodes. A first set of the electrodes is at a first radial distance from the longitudinal axis. A second set of the electrodes is in each case at a second radial distance from the longitudinal axis. The first radial distance is less than the second radial distance. Alternatively or additionally, the apparatus may have an elongated opening with a radial extent. The opening has a longitudinal extent which is greater than the radial extent.

Abstract: A particle beam device and a method for operation of a particle beam device are disclosed. The particle beam device has a sample chamber, a sample arranged in the sample chamber, a first particle beam column, a second particle beam column and at least one detector arranged in a first cavity in a first hollow body. The first cavity has a first inlet opening. The first particle beam column and the second particle beam column are arranged on one plane, while the detector is not arranged on that plane. At least one control electrode is arranged on the first particle beam column. The second particle beam column has a terminating electrode. A first hollow body voltage, a control electrode voltage and/or a terminating electrode voltage are/is chosen such that first interaction particles and/or second interaction particles enter the first cavity in the first hollow body through the first inlet opening.

Abstract: An SACP method includes directing a beam of charged particles onto an object surface of an object using a particle optical system, and detecting intensities of particles emanating from the object. The method further includes: (a1) adjusting an excitation of the second beam deflector for adjusting an impingement location of the beam on the object surface; (a2) adjusting an excitation of the first beam deflector for adjusting an angle of incidence of the beam on the object surface without changing the impingement location and detecting the intensity; and (a3) repeating the adjusting of the excitation of the first beam deflector for adjusting the angle of incidence without changing the impingement location such that a corresponding intensity is detected for each of at least 100 different angles of incidence at the same impingement location.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: A particle beam apparatus includes a first aperture unit having an adjustable aperture opening. The particle beam apparatus may include a first condenser lens having a first pole shoe and a second pole shoe. Both the first pole shoe and the second pole shoe may be adjustable relative to a second aperture unit independently of each other. The second aperture unit may be designed as a pressure stage aperture separating a first area having a vacuum at a first pressure, and a second area having a vacuum at a second pressure. Additionally, a method for adjusting a beam current in a particle beam apparatus is provided.

Abstract: A charged particle beam column includes a charged particle beam source to generate a charged particle beam; an objective lens to focus the charged particle beam in an object plane; a first condenser lens disposed in a beam path of the charged particle beam between the charged particle beam source and the objective lens; a deflector disposed in the beam path between the first condenser lens and the objective lens and configured to change an angle of incidence of the charged particle beam in an object plane; and an aberration corrector disposed in the beam path between the deflector and the objective lens and configured to compensate aberrations introduced by the objective lens. The aberration corrector is also configured to not compensate aberrations introduced by the first condenser lens.

Abstract: Methods are disclosed that include exposing, in direct succession, portions of a surface of a sample to a charged particle beam, the portions of the surface of the sample forming a row in a first direction, the charged particle beam having an average spot size fat the surface of the sample, each portion being spaced from its neighboring portions by a distance of at least din the first direction, and a ratio d/f being 2 or more.

Abstract: A device for deflecting a particle beam out of a beam axis, or for guiding a particle beam into the beam axis, has a simple design, requires little space, and additionally ensures that no area of an object that is not to be struck is struck by a particle beam. The device may include components in the following sequence along the beam axis: first deflection element, a magnetic apparatus for providing a magnetic field axially to the beam axis, and a second deflection element. A particle beam apparatus may have a device of this type.

Abstract: A particle optical apparatus has a particle source for generating at least one beam of charged particles, and a magnet arrangement having two pole plates, which are arranged spaced apart from one another, such that the at least one beam of charged particles in operation passes through the pole plates, wherein trenches are provided in the pole plates, in which trenches coil wires are arranged. The trenches, when viewed in a cross section transverse to an extension direction of the trenches, have a smaller width in a region of a surface of the pole plates, than in a region arranged at a distance from the surface.

Abstract: A positioning device and a particle beam apparatus including a positioning device ensure reliable positioning of a holder for holding an object at any working distance. The positioning device includes a positionable holder for holding the object. A light source generates a light beam which is guided in the direction of the positionable holder. A detector detects the light beam. An injection area injects particles of a particle beam such that they are guided in the direction of the positionable holder. The light beam passes the injection area. The injection area has an output side for the light beam and the particle beam, which is directed toward the holder. The detector includes a detector element situated in an area between the output side and the holder. The light source includes a light source element situated in an area which extends away from the holder, starting from the output side.

Abstract: A particle optical arrangement providing an electron microscopy system 3 and an ion beam processing system 7 comprises an objective lens 43 of the electron microscopy system having an annular electrode 59 being a component of the electron microscopy system arranged closest to a position 11 of an object to be examined. Between the annular electrode and a principal axis 9 of the ion beam processing system 7 a shielding electrode 81 is arranged.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: An instrument, in particular an electron microscope, has at least one user controllable operating parameter and at least one further operating parameter having a required value at least partially dependent on that of the user controllable parameter. A number of possible values of the further operating parameter are stored in a memory and each stored value corresponds to a respective possible value of the user controllable parameter. Selecting one of said stored possible values causes the instrument to be controlled accordingly. There is also provided a tuner for enabling the user to alter the selected value and updating apparatus for updating the memory accordingly, so that the adjusted value of the further operating parameter is subsequently selected from the memory if the same value of the user controllable parameter is then chosen again.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.