Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: There are disclosed particle-optical beam splitters providing at least three beam-manipulating regions having magnetic fields of different field strengths provided therein for at least one particle beam passing the beam splitter. The beam splitter is, in first order, free of dispersion, astigmatism and distortion.

Abstract: An objective lens with magnetic and electrostatic focusing for an electron microscopy system is provided whose at least partially conical outer shape allows orienting an object to be imaged at a large angle range in respect of an electron beam, said objective lens exhibiting, at the same time, good optical parameters. This is enabled by a specific geometry of the lens elements. Furthermore, an examination for the simultaneous imaging and processing of an object is proposed which comprises, besides an electron microscopy system with the above-mentioned objective lens, also an ion beam processing system and an object support.

Abstract: The invention relates to a particle beam system comprising a particle source (1), a mirror corrector (9, 21 to 25), and an objective lens (16). The mirror corrector comprises an electrostatic mirror (9) and a magnetic beam deflector (21, 22, 23, 24, 25), which is arranged between the particle source (1) and the electrostatic mirror (9) as well as between the electrostatic mirror (9) and the objective lens (16). The magnetic beam deflector (21, 22, 23, 24, 25) is free from dispersion for each single pass. The magnetic beam deflector (21, 22, 23, 24, 25) also comprises quadrupoles and/or quadrupole components, which are provided in such a manner that a maximum of two planes, which are conjugated with regard to the diffraction plane (28) of the objective lens (16), occur on the entire path length between the first outlet from the magnetic beam deflector (21, 22, 23, 24, 25) and from the objective lens (16).

Abstract: An electron-beam device having a beam generator for generating an electron beam, an objective lens for focusing the electron beam on an object, and at least one detector for detecting electrons scattered on the object or emitted by the object. Furthermore, a detector system for detecting electrons is described. With an electron-beam device having a detector system according to the present invention, it is possible to make a selection in a simple manner, in particular according to backscattered and secondary electrons. At the same time, as many electrons as possible may be detected using the detector system. For this purpose, the electron-beam device exhibits at least one adjustable diaphragm which is allocated to the detector. The detector system exhibits a detector on which a reflector for reflecting electrons onto the detector is accommodated.

Abstract: An objective lens with magnetic and electrostatic focusing for an electron microscopy system is provided whose at least partially conical outer shape allows orienting an object to be imaged at a large angle range in respect of an electron beam, said objective lens exhibiting, at the same time, good optical parameters. This is enabled by a specific geometry of the lens elements. Furthermore, an examination for the simultaneous imaging and processing of an object is proposed which comprises, besides an electron microscopy system with the above-mentioned objective lens, also an ion beam processing system and an object support.

Abstract: There are disclosed particle-optical beam splitters providing at least three beam-manipulating regions having magnetic fields of different field strengths provided therein for at least one particle beam passing the beam splitter. The beam splitter is, in first order, free of dispersion, astigmatism and distortion.

Abstract: The invention relates to a particle beam system comprising a particle source (1), a mirror corrector (9, 21 to 25), and an objective lens (16). The mirror corrector comprises an electrostatic mirror (9) and a magnetic beam deflector (21, 22, 23, 24, 25), which is arranged between the particle source (1) and the electrostatic mirror (9) as well as between the electrostatic mirror (9) and the objective lens (16). The magnetic beam deflector (21, 22, 23, 24, 25) is free from dispersion for each single pass. The magnetic beam deflector (21, 22, 23, 24, 25) also comprises quadrupoles and/or quadrupole components, which are provided in such a manner that a maximum of two planes, which are conjugated with regard to the diffraction plane (28) of the objective lens (16), occur on the entire path length between the first outlet from the magnetic beam deflector (21, 22, 23, 24, 25) and from the objective lens (16).

Abstract: The invention relates to an imaging system for charged particles having a correction unit for correcting an objective lens. The correction unit essentially includes a beam deflector and a mirror which reflects the incoming particle beam. A first symmetry plane of the deflector is imaged in the mirror. The mirror images this first symmetry plane at an imaging scale of 1:1 in a second symmetry plane of the deflector. At the same time, the symmetry planes are either intermediate image planes or diffraction planes. With the high symmetry of the imaging system, the condition is achieved that the aberrations of the second order caused by a one-time passthrough through the deflector are cancelled after the second passthrough. The mirror can be so adjusted that its negative chromatic aberration compensates for the chromatic aberration of the objective lens and the other lenses. The spherical aberration can be compensated independently thereof with the aid of a hexapole which is centered in a diffraction plane.