Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel.

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity.

Abstract: A method for manufacturing a biochip having improved fluorescent signal sensing properties, and a biochip manufactured by the manufacturing method. A filter layer is provided between a bio-layer and a light sensor layer so as to remove noise generated by stray light during a bio-reaction process. Thereby, the sensitivity of the light sensor layer can be enhanced.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: An apparatus for transmitting data in a wireless communication system is provided. The apparatus includes a controller including a processor configured to generate and store data in a padding space, when padding exists in a data space, and a transmitter configured to transmit the data stored in the padding space.

Abstract: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.

Abstract: The present invention relates to a mobile communication system, and in particular, to a method and apparatus for transmitting and receiving a PDU including an Extension Bit field and a Length Indicator field in a UE or a Node B. A method for transmitting a PDU generated with more than two SDUs and a header having information on each SDU in a transmitter of a mobile communication system is provided. The method includes generating, in the header, a Length Indicator (LI) indicating an end point of each of remaining SDUs except for the last SDU and an Extension Bit indicating the presence/absence of another LI after each LI, and generating the header so that the LI succeeds the Extension Bit associated therewith; generating the PDU with the generated header and the SDUs; and transmitting the PDU.

Abstract: Methods and apparatuses are provided for transmitting and receiving a Packet Data Unit (PDU) in a mobile communication system. The PDU, including a header and at least one data field, is generated. The PDU is transmitted. The header includes a length indicator (LI) field and an extension bit field. The LI field indicates a length of a corresponding data field. The extension bit field indicates whether a data field follows or a set of an extension bit field and an LI field follows. The extension bit field is placed prior to the LI field in the set of the extension bit field and the LI field. An LI field is present for every data field except a last data field.

Abstract: Disclosed is a luminance compensation apparatus of an organic light emitting diode panel including a reference pixel element unit that is installed at an outer peripheral portion of a display area on an organic light emitting diode panel and operate corresponding to a pixel element aligned in the display area, and a driving chip that is provided in an area including the reference pixel element unit of the outer peripheral portion of the display area, compares a luminance value of light incident from the reference pixel element unit with a reference luminance value to calculate a luminance deviation value based on a comparison result, controls driving of pixel elements aligned in the display area according to the luminance deviation value, and allows light, luminance deviation of which has been compensated, to be irradiated.

Abstract: A liquid crystal display device comprises a liquid crystal display panel having liquid crystal cells which are defined by a gate line and a data line and which are arranged in a matrix type, an electrostatic discharge protection circuit mounted on the liquid crystal display panel and connected to any one of the gate line and the data line, a first voltage supply line supplying the same voltage as a first gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit, and a second voltage supply line supplying the same voltage as a second gate voltage with which the gate line is supplied to the electrostatic discharge protection circuit.

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity.

Abstract: A method and a device for operation a task in an electronic device are provided. The method for operating a task in an electronic device includes generating at least one task on a protocol layer basis based on a work to process, executing at least one task generated on a layer basis through at least one Central Processing Unit (CPU), determining whether a workload to process is changed, and changing, if the workload to process is changed, a workload of the executing of the at least one task.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: A liquid crystal display device includes gate and data lines on a first substrate, wherein the gate lines cross the data lines to define sub-pixels, a thin film transistor to where the gate lines cross the data lines, a pixel electrode connected to the thin film transistor, a common electrode in a first sub pixel, wherein a first parasitic capacitance between a first data line arranged at the left side of the first sub-pixel and the common electrode is smaller than a second parasitic capacitance between a second data line arranged at the right side of the first sub-pixel and the common electrode; and a second substrate bonded to the first substrate with a layer of liquid crystal molecules therebetween, wherein the pixel electrode overlaps the common electrode and has a plurality of slits.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.