Abstract: Provided is a biochip having improved fluorescent signal sensing properties. A filter layer is provided between a bio-layer and a light sensor layer so as to remove noise generated by stray light during a bio-reaction process. Thereby, the sensitivity of the light sensor layer can be enhanced.

Abstract: A method of developing software including a plurality of actors executable in parallel includes obtaining first input data including information regarding a plurality of procedures defining a series of messages between a first actor and at least one second actor from among the plurality of actors, obtaining second input data including information regarding relationships between the plurality of procedures, generating control data by interpreting the first and second input data, and controlling the plurality of procedures by processing the series of messages using the control data.

Abstract: A method for manufacturing a biochip having improved fluorescent signal sensing properties, and a biochip manufactured by the manufacturing method. A filter layer is provided between a bio-layer and a light sensor layer so as to remove noise generated by stray light during a bio-reaction process. Thereby, the sensitivity of the light sensor layer can be enhanced.

Abstract: Disclosed is a luminance compensation apparatus of an organic light emitting diode panel including a reference pixel element unit that is installed at an outer peripheral portion of a display area on an organic light emitting diode panel and operate corresponding to a pixel element aligned in the display area, and a driving chip that is provided in an area including the reference pixel element unit of the outer peripheral portion of the display area, compares a luminance value of light incident from the reference pixel element unit with a reference luminance value to calculate a luminance deviation value based on a comparison result, controls driving of pixel elements aligned in the display area according to the luminance deviation value, and allows light, luminance deviation of which has been compensated, to be irradiated.

Abstract: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.

Abstract: Methods and apparatuses are provided for transmitting and receiving a Packet Data Unit (PDU) in a mobile communication system. The PDU, including a header and at least one data field, is generated. The PDU is transmitted. The header includes a length indicator (LI) field and an extension bit field. The LI field indicates a length of a corresponding data field. The extension bit field indicates whether a data field follows or a set of an extension bit field and an LI field follows. The extension bit field is placed prior to the LI field in the set of the extension bit field and the LI field. An LI field is present for every data field except a last data field.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: The present invention provides relates to a substrate separation-type three-dimensional chip stacking image sensor of which a noise characteristic is improved by separately implementing an image sensor circuit as a first semiconductor chip and a second semiconductor chip and physically separating substrate respectively forming the first semiconductor chip and the second semiconductor chip, and a method for manufacturing the same. The present invention has the advantage that even though a plurality of circuit blocks are formed on one semiconductor substrate, the substrate is physically separated such that the separated substrates independently operate.

Abstract: The present invention provides a stack memory device and a method for operating same. The stack memory device, according to the present invention, is provided with: a first memory chip in which first type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each first type memory cell; and a second memory chip in which second type memory cells are repeatedly arranged in row direction and column direction, and which comprises one or more cell arrays, in which a dump line is connected to the each second type memory cell, wherein first pads are connected to the dump lines of the first type memory cells and second pads are connected to the dump lines of the second type memory cells, the first pads and the second pads having one-to-one correspondence.

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity.

Abstract: The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel.

Abstract: A method for manufacturing a biochip having improved fluorescent signal sensing properties, and a biochip manufactured by the manufacturing method. A filter layer is provided between a bio-layer and a light sensor layer so as to remove noise generated by stray light during a bio-reaction process. Thereby, the sensitivity of the light sensor layer can be enhanced.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: An apparatus for transmitting data in a wireless communication system is provided. The apparatus includes a controller including a processor configured to generate and store data in a padding space, when padding exists in a data space, and a transmitter configured to transmit the data stored in the padding space.

Abstract: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.