Abstract: Provided is a method and an apparatus for processing data at a high speed by a UE for data communication. In the method, received data is divided into a header and payload information, which are then stored in different memories. In the method, header processing and payload data processing can be performed in parallel, and two memory devices can perform parallel processing without sharing a bus.

Abstract: An LCD device includes a data line, a dummy layer, and source and drain electrodes formed on a substrate; an ohmic contact layer formed on the data line, the dummy layer, and the source and drain electrodes; a semiconductor and a gate insulating layers formed on the substrate; a plurality of contact holes formed through the ohmic contact layer, the semiconductor layer, and the gate insulating layer, wherein at least one contact hole exposes the drain electrode; a gate line formed on the gate insulating layer perpendicular to the data line; a gate electrode formed extending from the gate line, the gate electrode positioned between the source and drain electrodes; pixel regions defined by intersections of the gate and data lines; and a pixel electrode connected with the drain electrode through another contact hole, wherein the pixel electrode is formed of a same material as the gate line.

Abstract: A method and apparatus for transmitting/receiving data between a RLC RESET sender and a RLC RESET receiver in a mobile communication system. In the RLC RESET operation of the mobile communication system, the present invention provides information on the normally received packet of each RLC entity's receiving side to the counterpart RLC entity's transmitting side to enable lossless data transmission for its succeeding packets, thereby preventing a loss of the transmission data, which may occur during the RLC RESET operation, and thus contributing to an increase in the transmission efficiency.

Abstract: Disclosed herein is a polyoxymethylene resin composition which comprises 100 parts by weight of a polyoxymethylene polymer (A), 0.005-2 parts by weight of an amine-substituted triazine compound (B), 0.01-5 parts by weight of a compound (C) prepared by grafting 0.05-5 parts by weight of anhydrous maleic acid onto an ethylene-propylene copolymer and an ethylene-propylene terpolymer, and 0.001-2 parts by weight of 1,12-dodecanedicarboxylic acid dihydrazide (D). The polyoxymethylene resin composition is highly thermally stable, and shows reduced generation of formaldehyde gas, particularly, during molding and from final molded products.

Abstract: A method for requesting retransmission of high-speed packet data in a receiving Automatic Retransmission reQuest (ARQ) entity of a mobile communication system that simultaneously performs Hybrid Automatic Retransmission reQuest (HARQ) and ARQ. The method includes, upon receipt of a packet, determining a sequence number of the received packet, and determining if there is at least one missing packet preceding the received packet; if there is at least one missing packet, driving a first timer which is set to a time required when a number of retransmission attempts reaches a predetermined maximum number of HARQ retransmissions, and monitoring receipt of the missing packet; and upon expiration of the timer, sending to a transmitting ARQ entity an Acknowledgement (ACK) including a last sequence number among sequence numbers of normally received consecutive ARQ packets.

Abstract: A method for retransmitting high-speed packet data in a transmission apparatus of a mobile communication system that simultaneously performs Automatic Retransmission reQuest (ARQ) that retransmits an ARQ packet reconfigured by allocating a sequence number to data delivered from an upper layer, and Hybrid Automatic Retransmission reQuest (HARQ) that multiplexes a plurality of ARQ packets into one HARQ packet and performs repeated retransmission on the HARQ packet within a maximum retransmission limit value. A transmitting HARQ entity checks a missing ARQ packet and sends a Negative Acknowledgement (NACK) for the missing ARQ packet to a transmitting ARQ entity. The transmitting ARQ entity receives an Acknowledged (ACK) for ARQ packets from a receiving ARQ entity, detects at least one missing ARQ packet according to the NACK and the ACK, configures a retransmission packet with the detected ARQ packet, and retransmits the retransmission packet.

Abstract: A backlight is provided. The backlight unit includes a bottom frame having a topside and a backside. At least one lamp is disposed on the topside of the bottom frame. A socket connector is disposed on a backside of the bottom frame. The socket connector is connected to the fluorescent lamp. A backlight circuit board having a plug connector is connected to the socket connector.

Abstract: An array substrate for an IPS mode LCD device includes a gate line in a first direction on a substrate and a data line in a second direction over the substrate; a metal and a common lines in the second direction on the substrate and includes a plurality of first and second protruding portions in the first direction, respectively; a TFT connected to the gate and data lines; an insulating layer over the metal and common lines; a common electrode over the insulating layer and including a first common portion in the second direction and a plurality of second common portions in the first direction; and a pixel electrode over the insulating layer and including a first pixel portion in the second direction and a plurality of second pixel portions in the first direction, wherein the plurality of second common and pixel portions are alternately arranged.

Abstract: An in-plane switching mode liquid crystal display device includes a liquid crystal panel. The liquid crystal panel includes first and second substrates and a liquid crystal layer interposed between the first and second substrates. The first substrate includes a common electrode and a pixel electrode thereon. A top case is mounted over the second substrate and covers the second substrate. A driving unit is connected to the first substrate and outputs a common voltage. At least one common voltage transmission wire is configured to contact an inner surface of the top case and connected to the driving unit. At least one common voltage applying conductor is connected to the common voltage transmission wire and the common electrode.

Abstract: A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels.

Abstract: A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels.

Abstract: A CMOS image sensor for providing a wider dynamic range even at a low power supply voltage level includes a plurality of unit pixels and a control unit. Each unit pixel includes: a light sensing element for sensing an incident light to generate photoelectric charges to a sensing node; a first switching unit, coupled between a power terminal and the sensing node, for transferring a reset voltage level from a voltage source to the light sensing element; an amplification unit for amplifying a voltage level of the sensing node to output an amplified signal, wherein one terminal of the amplification unit is coupled to a ground terminal; a second switching unit, coupled between an output node and the other terminal of the amplification unit, for outputting the amplified signal as an image data via the output node. The control unit, which is coupled between the power terminal and the output node, controls an output resistance of the output node.

Abstract: The present invention relates to a thiazolidinedione derivative, represented in formula (1) below, pharmaceutically acceptable salts thereof, and/or pharmaceutically acceptable solvates thereof. Further, the present invention provides a pharmaceutical composition comprising the compound represented in formula (1) below, wherein: X represents a carbon or nitrogen atom, Y represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen, or an aryl group, Z represents an oxygen, nitrogen, or sulfur atom, and R1 and R2 each represent a hydrogen atom; or R1 and R2 together form a bond.

Abstract: The present invention relates to a thiazolidinedione derivative, represented in formula (1) below, pharmaceutically acceptable salts thereof, and/or pharmaceutically acceptable solvates thereof.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: The present invention relates to a semiconductor device; and, more particularly, to a power-on reset circuit to produce a stable reset signal irrespective of driving speed of a power-on signal which is applied thereto at the time of its initial chip operation. The power-on reset circuit according to the present invention comprises an input unit receiving the power-on signal from an external circuit; a schmitt trigger inverter including an output node, wherein a voltage level at the output node is toggled from a high voltage level signal to a low voltage level signal before an output signal from the input unit increases up to a desired voltage level; and an output unit coupled to the output node for generating the power-on reset signal in response to the voltage level at the output node.

Abstract: The disclosed devices provide a CMOS sensor and, more particularly, an enhanced CMOS sensor improving picture quality by concurrently performing a gamma correction and an analog-to-digital conversion. In an embodiment, there is provided a CMOS image sensor, having: an image capturing unit for converting rays of light incident upon a photo-sensitive area to an analog signal; an analog-to-digital converter for converting the analog image signal to a digital image signal; and a ramp signal generator for producing a ramp signal in order to provide a reference voltage signal to the analog-to-digital converter. The ramp signal generator may include: a) a plurality of capacitors and switches; b) an amplifier coupled to the plurality of capacitors and switches for receiving a gain and reset voltage from external circuitry; and c) capacitance controlling means coupled in parallel to at least one capacitor in the ramp signal generator in order to form the ramp signal for an analog gamma correction.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: A method for fabricating a color image sensor for scanning and converting an optical image into electrical signals, includes the steps of: (a) forming a P-type semiconductor layer on a substrate; (b) forming field oxide layers on the P-type semiconductor layer to define regions for red, green and blue photodiodes; (c) providing an ion implantation mask having different mask patterns for the red, the green and the blue photodiodes; (d) implanting impurity ions into the P-type semiconductor layer through the use of said ion implantation mask to form N-type diffusion regions in the P-type semiconductor layer; and (e) applying a thermal process to the resulting structure to form different first, second and third depletion regions corresponding to the red, the green and the blue photodiodes.

Abstract: A novel CMOS image unit pixel layout having a photodiode including an optically optimized square image sensing region. The square image sensing layout provides for reduced electrical and color crosstalk and improved modulation transfer function (MTF) between neighboring pixels of an array of pixels.