Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: An extensible partition includes a partition including a display area for displaying an image and configured to be rolled, and a roller for rolling the partition, the roller being coupled with a first end of the partition.

Abstract: Provided is a method and an apparatus for processing data at a high speed by a UE for data communication. In the method, received data is divided into a header and payload information, which are then stored in different memories. In the method, header processing and payload data processing can be performed in parallel, and two memory devices can perform parallel processing without sharing a bus.

Abstract: A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.

Abstract: Provided are a fingerprint recognition device which performs a fingerprint recognition function and can be inserted into a card, the card including the fingerprint recognition device, and a user authentication method for the card including the fingerprint recognition device. The fingerprint recognition device includes a fingerprint touch unit that a fingerprint touches and an image sensor capturing a fingerprint pattern by using a reflected wave reflected from the fingerprint touch unit 310 and comparing a comparison reference fingerprint pattern with the captured fingerprint pattern.

Abstract: Provided is a pixel for picking up an image signal capable of suppressing an occurrence of a cross-talk. The pixel for picking up an image signal includes a substrate surrounded by a trench, a photodiode, and a pass transistor. The photodiode is formed at an upper portion of the substrate and includes a P-type diffusion area and an N-type diffusion area which are joined with each other in a longitudinal direction. The pass transistor is formed at the upper portion of the substrate and includes the one terminal that is the joined P-type diffusion area and the N-type diffusion area, the other terminal that is a floating diffusion area, and a gate terminal disposed between the two terminals. The pixel for picking up an image signal is surrounded by the trench which penetrates the substrate from the upper portion to the lower portion of the substrate, and the trench is filled with an insulator.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area.

Abstract: Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges.

Abstract: An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line along a first direction on the substrate, a data line along a second direction and crossing the gate line to define a pixel region, a common line on the substrate, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region and connected to the thin film transistor, the pixel electrode including horizontal parts along the first direction, and a common electrode in the pixel region and connected to the common line, the common electrode including horizontal portions along the first direction, wherein the pixel electrode and the common electrode are formed on a same layer.

Abstract: A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line.

Abstract: An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line along a first direction on the substrate, a data line along a second direction and crossing the gate line to define a pixel region, a common line on the substrate, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region and connected to the thin film transistor, the pixel electrode including horizontal parts along the first direction, and a common electrode in the pixel region and connected to the common line, the common electrode including horizontal portions along the first direction, wherein the pixel electrode and the common electrode are formed on a same layer.

Abstract: An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line along a first direction on the substrate, a data line along a second direction and crossing the gate line to define a pixel region, a common line on the substrate, a thin film transistor connected to the gate and data lines, a pixel electrode in the pixel region and connected to the thin film transistor, the pixel electrode including horizontal parts along the first direction, and a common electrode in the pixel region and connected to the common line, the common electrode including horizontal portions along the first direction, wherein the pixel electrode and the common electrode are formed on a same layer.

Abstract: A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT1. Signals corresponding to images incident onto the second and fourth photodiodes are output through a second common detection line OUT2.

Abstract: An in-plane switching mode liquid crystal display device includes first and second substrates, a gate line on the first substrate, a data line crossing the gate line defining a unit pixel region, a thin film transistor at the crossing of the gate line and the data line, a pixel electrode line in parallel with the data line, a plurality of pixel electrodes formed to be protruded in an extended direction of the gate line from the pixel electrode line, a common electrode line adjacent to a data line of a neighboring pixel in the extended direction of the gate line and in parallel therewith, a plurality of common electrodes protruded from the common electrode line and alternately arranged in parallel with the plurality of pixel electrodes to generate an in-plane electric field, and a liquid crystal layer between the first and second substrates.

Abstract: A method for retransmitting high-speed packet data in a transmission apparatus of a mobile communication system that simultaneously performs Automatic Retransmission reQuest (ARQ) that retransmits an ARQ packet reconfigured by allocating a sequence number to data delivered from an upper layer, and Hybrid Automatic Retransmission reQuest (HARQ) that multiplexes a plurality of ARQ packets into one HARQ packet and performs repeated retransmission on the HARQ packet within a maximum retransmission limit value. A transmitting HARQ entity checks a missing ARQ packet and sends a Negative Acknowledgement (NACK) for the missing ARQ packet to a transmitting ARQ entity. The transmitting ARQ entity receives an Acknowledged (ACK) for ARQ packets from a receiving ARQ entity, detects at least one missing ARQ packet according to the NACK and the ACK, configures a retransmission packet with the detected ARQ packet, and retransmits the retransmission packet.

Abstract: Disclosed is a folding and shape-forming apparatus for a prepreg which includes a vacuum chamber which can generate a vacuum pressure in the inside thereof, an expanding portion disposed inside the vacuum chamber, provided with a prepreg thereon, and expanding because of the vacuum pressure inside the vacuum chamber, a heating portion disposed inside the vacuum chamber for heating the prepreg, a mandrel loaded at a portion of an upper surface of the prepreg, a first pressing portion which is brought into contact with an upper surface of the mandrel to press the mandrel, and a second pressing portion which simultaneously presses both another portion of the upper surface of the prepreg and the expanding portion.