Abstract: Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area.

Abstract: Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply.

Abstract: A 3T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including three transistors and a 3T-4S image sensor including the 3T-4S step & repeat unit cell are provided. The 3T-4S step & repeat unit cell includes first to fourth photodiodes. A first shared image sensor unit cell is obtained by combining the first and second photodiodes with four transistors. A second shared image sensor unit cell is obtained by combining the third and fourth photodiodes with four transistors. Signals corresponding to images incident onto the first and second photodiodes are output through a first common detection line. Signals corresponding to images incident onto the third and fourth photodiodes are output through a second common detection line. A terminal of each of the four photodiodes is connected to a first voltage source. Conversion voltages corresponding to image signals incident onto two photodiodes via green filters are output through a common detection line.

Abstract: A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted.

Abstract: A unit pixel having a pixel constructed with a photodiode and a 2-transistor for an image sensor is disclosed. The unit pixel having a 2-transistor structure for an image sensor includes: a photodiode containing impurities having an opposite type of a semiconductor material; a reset transistor connected to the photodiode to initialize the photodiode; and a transistor having selecting and reading-out functions connected to the photodiode to have functions of controlling connection between a pixel and an external lead-out circuit and reading-out the information of the pixel. Accordingly, an aperture surface rises and a pixel size decreases, so that sensitivity increases. Also, the fill factor of the photodiode increases significantly due to a decrease of the number of the transistor, so that the sensitivity increases and costs reduce.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: Disclosed is a folding and shape-forming apparatus for a prepreg which includes a vacuum chamber which can generate a vacuum pressure in the inside thereof, an expanding portion disposed inside the vacuum chamber, provided with a prepreg thereon, and expanding because of the vacuum pressure inside the vacuum chamber, a heating portion disposed inside the vacuum chamber for heating the prepreg, a mandrel loaded at a portion of an upper surface of the prepreg, a first pressing portion which is brought into contact with an upper surface of the mandrel to press the mandrel, and a second pressing portion which simultaneously presses both another portion of the upper surface of the prepreg and the expanding portion.

Abstract: An array substrate for an IPS mode LCD device includes a gate line in a first direction on a substrate and a data line in a second direction over the substrate; a metal and a common lines in the second direction on the substrate and includes a plurality of first and second protruding portions in the first direction, respectively; a TFT connected to the gate and data lines; an insulating layer over the metal and common lines; a common electrode over the insulating layer and including a first common portion in the second direction and a plurality of second common portions in the first direction; and a pixel electrode over the insulating layer and including a first pixel portion in the second direction and a plurality of second pixel portions in the first direction, wherein the plurality of second common and pixel portions are alternately arranged.

Abstract: An in-plane switching mode liquid crystal display device includes a liquid crystal panel. The liquid crystal panel includes first and second substrates and a liquid crystal layer interposed between the first and second substrates. The first substrate includes a common electrode and a pixel electrode thereon. A top case is mounted over the second substrate and covers the second substrate. A driving unit is connected to the first substrate and outputs a common voltage. At least one common voltage transmission wire is configured to contact an inner surface of the top case and connected to the driving unit. At least one common voltage applying conductor is connected to the common voltage transmission wire and the common electrode.

Abstract: Provided is an optical image receiving device having a high and rapid sensitivity and a wide dynamic range manufacture in a CMOS process. The image receiving device includes a capacitor transistor for a special purpose in addition to a general structure of three transistors and a light receiving portion. The capacitor transistor has first and second source/drain ports connected to the capacitance node and the floating diffusion node, respectively, and is gated in response to activation of a predetermined capacitor control signal. In the CMOS optical image receiving device, the floating diffusion node is pumped over an external power voltage. Thus, the electronic potential of the floating diffusion node in the initialization state is much higher than the maximum voltage of the light receiving portion. Thus, the CMOS active pixel has a very high sensitivity in a region where the intensity of light is weak.

Abstract: Provided is a unit pixel which uses three transistors and a pixel array including the unit pixel. The unit pixel includes a photodiode, a charge passing unit, a reset controller, and a voltage converter. The pixel array has a structure in which a plurality of the unit pixels according to the present invention are two-dimensionally arrayed, and includes one or more reset power supply circuits which output two or more different supply voltages in response to a pixel selection control signal. Parts of a plurality of the unit pixels share a voltage output from the reset power supply circuit.

Abstract: Provided is a pixel for picking up an image signal capable of suppressing an occurrence of a cross-talk. The pixel for picking up an image signal includes a substrate surrounded by a trench, a photodiode, and a pass transistor. The photodiode is formed at an upper portion of the substrate and includes a P-type diffusion area and an N-type diffusion area which are joined with each other in a longitudinal direction. The pass transistor is formed at the upper portion of the substrate and includes the one terminal that is the joined P-type diffusion area and the N-type diffusion area, the other terminal that is a floating diffusion area, and a gate terminal disposed between the two terminals. The pixel for picking up an image signal is surrounded by the trench which penetrates the substrate from the upper portion to the lower portion of the substrate, and the trench is tilled with an insulator.

Abstract: Provided are a fingerprint recognition device which performs a fingerprint recognition function and can be inserted into a card, the card including the fingerprint recognition device, and a user authentication method for the card including the fingerprint recognition device. The fingerprint recognition device includes a fingerprint touch unit that a fingerprint touches and an image sensor capturing a fingerprint pattern by using a reflected wave reflected from the fingerprint touch unit 310 and comparing a comparison reference fingerprint pattern with the captured fingerprint pattern.

Abstract: The present invention relates to a mobile communication system, and in particular, to a method and apparatus for transmitting and receiving a PDU including an Extension Bit field and a Length Indicator field in a UE or a Node B. A method for transmitting a PDU generated with more than two SDUs and a header having information on each SDU in a transmitter of a mobile communication system is provided. The method includes generating, in the header, a Length Indicator (LI) indicating an end point of each of remaining SDUs except for the last SDU and an Extension Bit indicating the presence/absence of another LI after each LI, and generating the header so that the LI succeeds the Extension Bit associated therewith; generating the PDU with the generated header and the SDUs; and transmitting the PDU.

Abstract: In a driving method of a complementary metal oxide semiconductor active pixel, timing of a transmission control signal and a reset control signal generated in a read-out section is performed in advance in a reset section. A potential wall between a photodiode area and a transmission transistor having a size corresponding to one generated in the read-out section is generated in the reset section in advance and the photodiode area is filled with charges. A dead region is reduced in the read-out section. In the reset section, the transmission transistor connecting a collection node to accumulate the signal charges generated from the photodiode and the floating diffusive node is turned on at least one time, and a difference between an initial voltage of the collection node and a voltage of the reset level of the floating diffusive node is reduced.

Abstract: A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: A 4T-4S step & repeat unit cell obtained by combining four image sensor unit cells each including four transistors and a 4T-4S image sensor including the 4T-4S step & repeat unit cell are provided. The 4T-4S step & repeat unit cell includes first and second shared image sensor unit cells. The first shared image sensor unit cell includes first and third photodiodes and five transistors. The second shared image sensor unit cell includes second and fourth photodiodes and five transistors. The second photodiode is disposed over the first photodiode. The third photodiode is disposed at a side of the second photodiode. A terminal of each of the fourth photodiode is connected to a first voltage source. Signals corresponding to images incident onto the first and third photodiodes are output through a first common detection line OUT1. Signals corresponding to images incident onto the second and fourth photodiodes are output through a second common detection line OUT2.

Abstract: A window system for high floors installed in a window opening defined through a wall comprises a main frame, which has a thickness which corresponds to the thickness of the wall when measured in forward and rearward directions, and is fitted into and secured in the window opening of the wall; and at least one division frame coupled to the main frame in a vertical and/or horizontal direction to divide the window space defined in the main frame into a plurality of window spaces, and depressed indoors from the front outdoor surface of the main frame. The window system has sufficient wind resistance, improves the aesthetic outer appearance of a building including the window system, decreases the numbers of component parts and required work processes, is easy to manufacture and install, reduces costs, allows easy coupling of a window sash, ensures watertightness, prevents corrosion, and is easy and safe to wash.

Abstract: A compound of formula 1 efficiently inhibits several protein kinases including glycogen synthase kinase 3 (GSK), aurora kinase, extracellular signal-regulated kinase (ERK), protein kinase B (AKT), and the likes, to control signal transductions involved in variable disorders such as diabetes, obesity, dementia, cancer, and inflammation.