Abstract: A leadframe for use in the assembly of integrated circuit (IC) chips, which has first and second surfaces and a base metal structure (606) with an adherent layer (607) of nickel having a rough, non-reflecting surface covering the base metal. This rough nickel enhances adhesion to molding compounds. An adherent layer (608) of smooth, reflective nickel selectively covers the first surface of the leadframe in areas intended for attachment of bonding wires and the IC chip. This smooth nickel facilitates the use of vision systems. A first adherent metal layer (609) is deposited in selected areas of the first leadframe surface for wire bond attachment, and a second adherent metal layer (610) is deposited to provide attachment to external parts.

Abstract: A leadframe for use with integrated circuit chips comprising a plated layer of gold selectively covering areas of said leadframe intended for solder attachment; and said gold layer providing a visual distinction to said areas.

Abstract: A lead frame including a first set of leads in a first plane and a second set of leads in a second plane offset vertically from the second plane. The leads in the first and second planes are offset from each other by a lead width.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of pure tin on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

Abstract: A method for fabricating a leadframe structure comprising a chip mount pad and a plurality of lead segments, each having a first end near the mount pad and a second end remote from said mount pad. The structure is formed from a sheet-like starting material. In a first plating system, the leadframe is plated with a layer of nickel. Next, the second segment ends are selectively masked and a layer of palladium is selectively plated on the nickel layer on the exposed chip pad and first segments ends in a thickness suitable for wire bonding attachment. In a second plating system, the chip pad and first segment ends are selectively masked and a pure tin layer is selectively plated on the nickel layer on the exposed second segment ends in a thickness suitable for parts attachment.

Abstract: An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A-2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.

Abstract: For a semiconductor integrated circuit (IC) leadframe, a base metal sheet (10 in FIG. 3B) of a first metal, including copper, has substantially parallel first (11) and second (12) surfaces and an adherent layer of a second metal 13a and 13b), including nickel, covering both surfaces. A first layer (14) of a third metal, including palladium, adherent to the second metal, is pre-plated on the first surface in a thickness suitable for bonding wire attachment. On the opposite surface, a second layer (15) of the third metal is adherent to the second metal on the second surface in a thickness suitable for parts attachment. Alternatively, a layer of a fourth metal, including tin, is used for parts attachment. The leadframe structure is then stamped from the sheet so that the base metal is exposed at the stamped edges (10a in FIG. 3A). Finally, the exposed base metal is preferentially chemically etched so that it is contoured (10b) for maximum adhesion and imbued with affinity to polymeric compounds.

Abstract: A method for fabricating a leadframe structure comprising a chip mount pad and a plurality of lead segments, each having a first end near the mount pad and a second end remote from said mount pad. The structure is formed from a sheet-like starting material. In a first plating system, the leadframe is plated with a layer of nickel. Next, the second segment ends are selectively masked and a layer of palladium is selectively plated on the nickel layer on the exposed chip pad and first segments ends in a thickness suitable for wire bonding attachment. In a second plating system, the chip pad and first segment ends are selectively masked and a pure tin layer is selectively plated on the nickel layer on the exposed second segment ends in a thickness suitable for parts attachment.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of pure tin on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal, usually copper or a copper alloy, having a modified surface adapted to provide bondability and solderability and adhesion to polymeric compounds. The modified surface comprises a layer created by converting a percentage of base metal atoms into substitutional metal complexes, usually hydrated chromates. A thin layer of plated copper may be employed for controlling uniformity and consistency of the replacement reaction.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering the base metal and a plated layer of pure tin, only </=0.5 &mgr;m thick, on the nickel layer, selectively covering areas of the leadframe intended for attachment to other parts. For devices with gull-wing-shaped leads, these pre-plated tin areas cover only the external lead surface intended to face an outside part, and the lead edges. Further, a plated layer of palladium on the nickel layer selectively covers areas of the leadframe intended for bonding wire attachment.

Abstract: An electrical apparatus having resistance to atmospheric effects includes at least one electrical device and a packaging structure. The packaging structure substantially encloses the at least one electrical device. The packaging structure includes a corrosion-resisting agent.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal, usually copper or a copper alloy, having a modified surface adapted to provide bondability and solderability and adhesion to polymeric compounds. The modified surface comprises a layer created by converting a percentage of base metal atoms into substitutional metal complexes, usually hydrated chromates. A thin layer of plated copper may be employed for controlling uniformity and consistency of the replacement reaction.

Abstract: A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of lead-free solder on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

Abstract: An integrated circuit device (10) with a bonding surface (12) directly over its active circuitry, and a method of making such integrated circuits (FIGS. 2A-2E). To make the bonding surface (12), a wafer (20) is provided with vias (24) to its metallization layer (21) and then coated with a seed metal layer (25). A plating pattern (26) is formed on the wafer (20), exposing portions of the seed metal layer (25) and blocking the rest of the seed metal layer (25). These exposed portions are plated with successive metal layers (27, 28, 29), thereby forming a bonding surface (12) having a number of layered stacks (200) that fill the vias (24). The plating pattern and the nonplated portions of the seed metal layer (25) are then removed.

Abstract: A leadframe for use with integrated circuit chips comprising a plated layer of gold selectively covering areas of said leadframe intended for solder attachment; and said gold layer providing a visual distinction to said areas.

Abstract: The invention is a lead frame that has leads formed in two levels during the etching process in which the lead frame is formed. A lead frame form (40), or continuous strip of lead frame material, is coated on two sides with a photo resist material (41,43). Each photo resist coated side is patterned to define leads on the lead frame. The lead patterns (41,43, 42,44) on the two sides are offset from each other so that patterns on one side of the lead frame material alternate with the patterns on the other side of the lead frame material. Both sides of the photo resist patterned lead frame material are etched to a depth exceeding the thickness of a lead. The photo resist (41,43) material is then removed. The resulting lead frame has leads (50-56) that are in two levels, each level having leads offset by a lead width from the other level, but with an effective zero distance between leads horizontally.

Abstract: The invention is a lead frame that has leads formed in two levels during the etching process in which the lead frame is formed. A lead frame form (40), or continuous strip of lead frame material, is coated on two sides with a photo resist material (41,43). Each photo resist coated side is patterned to define leads on the lead frame. The lead patterns (41,43, 42,44) on the two sides are offset from each other so that patterns on one side of the lead frame material alternate with the patterns on the other side of the lead frame material. Both sides of the photo resist patterned lead frame material are etched to a depth exceeding the thickness of a lead. The photo resist (41,43) material is then removed. The resulting lead frame has leads (50-56)that are in two levels, each level having leads offset by a lead width from the other level, but with an effective zero distance between leads horizontally.

Abstract: A leadframe for use in the assembly of integrated circuit chips comprising a base metal structure having an adherent layer of nickel covering said base metal; an adherent film of palladium on said nickel layer; and an adherent layer of palladium on said palladium film, selectively covering areas of said leadframe suitable for bonding wire attachment and solder attachment.

Abstract: A leadframe for use with integrated circuit chips Comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment; and a plated layer of solder on said nickel layer, selectively covering areas of said leadframe intended for parts attachment.