Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.

Abstract: A porous polymer structure having a smooth surface and a porous structure embedded below the surface can be simply produced by using a hydrophobic substrate with a steam spraying process, and the porous polymer structure can exhibit very excellent low-adhesive property due to the smooth surface and the porous structure embedded below the surface. It is possible to realize excellent low-adhesive property even without using a surface modifier or a lubricant. Since the structure shows flexibility, it can even be attached to a curved surface, and can be usefully applied to various industries due to a possible adjustment of the surface characteristic.

Abstract: A method for manufacturing a LiDAR device is proposed. The method may include providing a LiDAR module including a laser emitting module and a laser detecting module to a target region. The method may also include adjusting, on the basis of first detecting data obtained from the laser detecting module, a relative position of a detecting optic module with respect to the laser detecting module. The method may further include adjusting, on the basis of image data obtained from at least one image sensor, a relative position of an emitting optic module with respect to the laser emitting module.

Abstract: Disclosed are a method for extracting a compound represented by Chemical Formula 1 from ginseng, including anaerobic natural fermentation of ginseng, an anaerobic-naturally fermented ginseng extract including the compound represented by Chemical Formula 1 extracted by the method, and a method of enhancing the skin barrier including applying a composition including an effective amount of the anaerobic-naturally fermented ginseng extract. In Chemical Formula 1, each substituent is as defined in the specification.

Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: Disclosed is a gas vehicle injector having improved lubrication characteristics. The injector is provided with a housing installed at a fuel supply pipe of an engine, a needle valve installed at a lower portion of the housing and having an injection nozzle, a coil installed inside the housing and generating a magnetomotive force by receiving electric power, a solenoid having a core generating an attractive force by the magnetomotive force, and a plunger reciprocating and installed below the solenoid, and the injector includes: a depression groove circumferentially formed on an inner circumferential surface of the housing; and a communication groove formed on the inner circumferential surface of the housing, and communicating with the depression groove.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: Disclosed is a compressed natural gas injector. The injector includes: a housing provided at a fuel supply pipe of an engine; a needle valve provided at a lower portion of the housing, and having an injection nozzle; a solenoid having a coil provided in the housing and generating a magnetomotive force by receiving power, and a core generating an attraction force due to the magnetomotive force; a reciprocating plunger provided below the solenoid; and an elastic member placed on the plunger and including a contact portion provided in parallel to a lower surface of the core, and a protruding portion inclinedly protruding upwards and outwards from the contact portion.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.