Patents by Inventor Dong-Jo Kim

Dong-Jo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11123717
    Abstract: Disclosed is a catalyst for oxygen reduction and evolution reactions. The catalyst is in the form of nickel sulfide (NiS2) nanosheets. NiS2 molecules are cross-linked and oriented two-dimensionally in the NiS2 nanosheets. Also disclosed is a method for producing the catalyst.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: September 21, 2021
    Assignee: Korea University Research and Business Foundation
    Inventors: Dong-Wan Kim, Bobae Ju, Hee Jo Song, Hyunseok Yoon
  • Patent number: 11107988
    Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: August 31, 2021
    Assignees: Research and Business Foundation Sungkyunkwan University, Global Frontier Center for Multiscale Energy Systems
    Inventors: Hyun Suk Jung, Sang Myeong Lee, Byeong Jo Kim, Jae Bum Jeon, Gi Joo Bang, Won Bin Kim, Dong Geon Lee
  • Patent number: 11102116
    Abstract: A method and device for hosting an application by an access node which provides network access to a terminal in a mobile communication system are provided. The method includes receiving a request packet for a service request from a user application of a mobile terminal, delivering the request packet to an application included in the access node, if a destination of the request packet corresponds to the application of the access node, providing a service to the user application of the mobile terminal through the application, and delivering the request packet to a corresponding public application on an external network, if the application corresponding to the destination of the request packet does not exist in the access node.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: August 24, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seong-Ryong Kang, Jong-Hyune Kim, Dong-Jo Cheong, Ki-Ho Cho
  • Publication number: 20210217895
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: December 8, 2020
    Publication date: July 15, 2021
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gap Kim, Yu-Gwang Jeong
  • Patent number: 10903447
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: January 26, 2021
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Patent number: 10861978
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: December 24, 2018
    Date of Patent: December 8, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20200358028
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Application
    Filed: July 30, 2020
    Publication date: November 12, 2020
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Patent number: 10734604
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: August 4, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Publication number: 20200152909
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Application
    Filed: January 17, 2020
    Publication date: May 14, 2020
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Patent number: 10547024
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: January 28, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Publication number: 20190312147
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: December 24, 2018
    Publication date: October 10, 2019
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20190136814
    Abstract: Disclosed is a gas vehicle injector having improved lubrication characteristics. The injector is provided with a housing installed at a fuel supply pipe of an engine, a needle valve installed at a lower portion of the housing and having an injection nozzle, a coil installed inside the housing and generating a magnetomotive force by receiving electric power, a solenoid having a core generating an attractive force by the magnetomotive force, and a plunger reciprocating and installed below the solenoid, and the injector includes: a depression groove circumferentially formed on an inner circumferential surface of the housing; and a communication groove formed on the inner circumferential surface of the housing, and communicating with the depression groove.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 9, 2019
    Inventors: Dong-Jo KIM, Jong-Wan LIM
  • Publication number: 20190067630
    Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.
    Type: Application
    Filed: April 13, 2018
    Publication date: February 28, 2019
    Inventors: Hyun Min Hwang, Yong Kyu Jang, Jae Kyung Go, Dong Jo Kim, Young Min Kim, Chan Young Park, Dong Won Han
  • Patent number: 10192992
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Patent number: 10167817
    Abstract: Disclosed is a compressed natural gas injector. The injector includes: a housing provided at a fuel supply pipe of an engine; a needle valve provided at a lower portion of the housing, and having an injection nozzle; a solenoid having a coil provided in the housing and generating a magnetomotive force by receiving power, and a core generating an attraction force due to the magnetomotive force; a reciprocating plunger provided below the solenoid; and an elastic member placed on the plunger and including a contact portion provided in parallel to a lower surface of the core, and a protruding portion inclinedly protruding upwards and outwards from the contact portion.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: January 1, 2019
    Assignee: DONGBANGTECH CO., LTD.
    Inventors: Dong Jo Kim, Jong Wan Lim
  • Publication number: 20180069129
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 8, 2018
    Inventors: YONG SU LEE, YOON HO KHANG, DONG JO KIM, HYUN JAE NA, SANG HO PARK, SE HWAN YU, CHONG SUP CHANG, DAE HO KIM, JAE NEUNG KIM, MYOUNG GEUN CHA, SANG GAB KIM, YU-GWANG JEONG
  • Patent number: 9837446
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: December 5, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
  • Patent number: 9768309
    Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: September 19, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yong Su Lee, Yoon Ho Khang, Dong Jo Kim, Hyun Jae Na, Sang Ho Park, Se Hwan Yu, Chong Sup Chang, Dae Ho Kim, Jae Neung Kim, Myoung Geun Cha, Sang Gab Kim, Yu-Gwang Jeong
  • Publication number: 20170154897
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Application
    Filed: February 8, 2017
    Publication date: June 1, 2017
    Inventors: Do-Hyun KIM, Yoon Ho KHANG, Dong-Hoon LEE, Sang Ho PARK, Se Hwan YU, Cheol Kyu KIM, Yong-Su LEE, Sung Haeng CHO, Chong Sup CHANG, Dong Jo KIM, Jung Kyu LEE
  • Patent number: 9666602
    Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: May 30, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ji-Seon Lee, Dong-Jo Kim, Yoon-Ho Khang, Yong-Su Lee, Jong-Chan Lee