Abstract: Embodiments described include voltage generators having reduced or eliminated cross current. Dynamic adjustment of a low or high threshold voltage used in a voltage generator is described. Use of a folded cascade amplifier in a voltage generator is also described.

Abstract: Circuits, apparatuses, and methods are disclosed for oscillators. In one such example oscillator circuit, a plurality of delay stages are coupled in series. A variable delay circuit stage is coupled to the plurality of delay stages and is configured to delay a signal through the variable delay circuit stage by a variable delay. The variable delay increases responsive to a rising magnitude of a supply voltage provided to the variable delay circuit stage.

Abstract: The present invention relates to a non-invasive blood glucose sensor, comprising: a substrate, a first metal layer, a second metal layer, and a blood glucose sensing unit, wherein the first metal layer is formed on the one surface of the substrate and has a microstrip antenna in the internal thereof, the second metal layer is formed on the other surface of the substrate, and the blood glucose sensing unit is electrically connected to the first metal layer and the second metal layer. In the present invention, the non-invasive blood glucose sensor can be used to measure a numerical value of the blood glucose in a human body by way of disposing the non-invasive blood glucose sensor near the human body, without using any body-invading ways, for example, the acupuncture treatment; therefore the inconveniences and incorrect measurements resulting from the body-invading ways can be avoided.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge-containing absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge-containing absorption layer to decrease the dark currents in APDs.

Abstract: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section of the electric control layer is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

Abstract: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section of the electric control layer is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing diphenylethylene-type functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: A silicon condenser microphone is disclosed. The microphone includes a transducer, an IC chip, a first board, a second board spaced from the first board by a frame, and a third board located between the first board and the second board. A cavity is accordingly formed by the first board, the frame and the third board to accommodate the transducer and the IC chip. The IC chip is electrically connected to a surface of the third board facing the second board. The microphone provides an enlarged back volume to the transducer and provides the transducer with a shield against electro-magnetic interference. A manufacturing process is also disclosed.

Abstract: Circuits, devices and methods are provided, such as an amplifier (e.g., a voltage regulator) that includes a feedback circuit that supplies negative feedback through a feedback path. One such feedback path includes a capacitance coupled in series with a “one-way” isolation circuit through which a feedback signal is coupled. The “one-way” isolation circuit may allow the feedback signal to be coupled from a “downstream” node, such as an output node, to an “upstream” node, such as a node at which an error signal is generated to provide negative feedback. However, the “one-way” isolation circuit may substantially prevent variations in the voltage at the upstream node from being coupled to the capacitance in the isolation circuit. As a result, the voltage at the upstream node may quickly change since charging and discharging of the capacitance responsive to voltage variations at the upstream node may be avoided.

Abstract: Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.

Abstract: Methods and devices of converting signals of consumer electronics connection protocols to high speed bi-directional signals are presented. A novel packing method packs all the data, clocks, and control signals into one or more packets of a predefined format. A novel unpacking method unpacks the packets to original data, clocks, and control signals.

Abstract: Embodiments described include voltage generators having reduced or eliminated cross current. Dynamic adjustment of a low or high threshold voltage used in a voltage generator is described. Use of a folded cascade amplifier in a voltage generator is also described.

Abstract: A voltage regulator includes an output drive device configured to provide an output voltage to an output terminal; an error amplifier configured to control the output drive device by taking into consideration a feedback signal from the output voltage; a first compensation unit configured to provide a first compensation signal to compensate an output signal of the error amplifier; and a second compensation unit configured to provide a second compensation signal to compensate an input signal of the error amplifier, wherein second compensation unit comprises at least two capacitors and at least one transistor configured to control the coupling of the two capacitors.

Abstract: Avalanche photodiodes having special lateral doping concentration that reduces dark current without causing any loss of optical signals and method for the fabrication thereof are described. In one aspect, an avalanche photodiode comprises: a substrate, a first contact layer coupled to at least one metal contract of a first electrical polarity, an absorption layer, a doped electric control layer having a central region and a circumferential region surrounding the central region, a multiplication layer having a partially doped central region, and a second contract layer coupled to at least one metal contract of a second electrical polarity. Doping concentration in the central section is lower than that of the circumferential region. The absorption layer can be formed by selective epitaxial growth.

Abstract: Some embodiments include apparatus and methods having a first switch, a second switch, and a circuit coupled to the first and second switches. The first switch may be configured to switch between an on-state and an off-state based on a value of a first current flowing through a number of resistors and a diode coupled in series with the resistors. The second switch may be configured to switch between the on-state and the off-state based on a value of a second current on a circuit path. The second current is a function of a voltage at a node between two of the resistors and a resistance of the circuit path. The circuit may be configured to provide a temperature reading based on the number of times the first switch or the second switch switches between the on-state and the off-state during a time interval.

Abstract: Vulcanizates with desirable properties can be obtained from compositions incorporating polymers that include hydroxyl group-containing aryl functionalities, silica or other particulate filler(s) that contain or include oxides of silicon and a compound that includes multiple hydroxyl groups. The compound can act to disrupt the interactivity of the functionalities and the particulate filler particles during processing of the composition, thereby facilitating processing of the composition.

Abstract: A voltage pumping circuit for pumping an input voltage to generate an output voltage, which comprises: a first voltage pumping path including a first number of pumping stages; and a second voltage pumping path including a second number of pumping stages, wherein the second number is less than the first number. Only one of the first voltage pumping path and the second voltage pumping path is activated according to at least one path selecting signal to pump the input voltage to generate the output voltage.

Abstract: A voltage pumping circuit for pumping an input voltage to generate an output voltage, which comprises: a first voltage pumping path including a first number of pumping stages; and a second voltage pumping path including a second number of pumping stages, wherein the second number is less than the first number. Only one of the first voltage pumping path and the second voltage pumping path is activated according to at least one path selecting signal to pump the input voltage to generate the output voltage.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge)-containing absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge-containing absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge-containing absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge-containing absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge-containing absorption layer to decrease the dark currents in APDs.

Abstract: Various embodiments of a method and device for dark current cancellation for optical power monitoring in optical transceivers are presented. In one aspect, a device includes a photosensitive module and a processing module coupled to the photosensitive module. The photosensitive module is configured to detect an optical signal and generate a first signal responsive to detecting the optical signal. The processing module is configured to determine a value of a second signal that is related to noise and determine a value of a third signal that is related to a difference between a value of the first signal and the value of the second signal.