Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: The invention provides a temperature detecting apparatus, a switch capacitor apparatus and a voltage integrating circuit. The voltage integrating circuit includes an operating amplifier, a capacitor and a current source. The operating amplifier has a positive input end, a negative input end and an output end. The output end of the operating amplifier generates an output voltage, and the positive input end receives a reference voltage. The capacitor is coupled between the output end and the negative input end of the operating amplifier. The current source is coupled to the output end of the operating amplifier. The current source draws a replica current from the capacitor, and a current level of the replica current is determined according to a current level of a current flowing to the negative input end of the operating amplifier.

Abstract: A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate.

Abstract: A method for preparing a functionalized polymer, the method comprising the step of reacting a reactive polymer with a functionalizing agent defined by formula I or formula II: or combinations thereof, where R1, R2, and R3 are each independently a divalent organic group, R4 and R5 are each independently a monovalent organic group, a is an integer from 0 to 1, x is an integer from 0 to 2, y is an integer from 1 to 3, x+y=3, and ? is a protected amino group.

Abstract: The invention provides a temperature detecting apparatus, a switch capacitor apparatus and a voltage integrating circuit. The voltage integrating circuit includes an operating amplifier, a capacitor and a current source. The operating amplifier has a positive input end, a negative input end and an output end. The output end of the operating amplifier generates an output voltage, and the positive input end receives a reference voltage. The capacitor is coupled between the output end and the negative input end of the operating amplifier. The current source is coupled to the output end of the operating amplifier. The current source draws a replica current from the capacitor, and a current level of the replica current is determined according to a current level of a current flowing to the negative input end of the operating amplifier.

Abstract: Some embodiments include apparatuses and methods having an input node to receive a first voltage, an output node to provide an output voltage, and a charge pump to generate the output voltage based on the first voltage. The charge pump can include a control node to receive a control signal for controlling at least one switch of the charge pump, such that the output voltage includes a value greater than a value of the first voltage. The control signal can include a level corresponding to a second voltage having a value greater than the value of the output voltage. Additional apparatus and methods are described.

Abstract: Embodiments of the present disclosure provide a high-speed silicon modulator without the microwave mode conversion and provide 50-ohm impedance matching to drivers simultaneously. In one aspect, a device may include an input waveguide region, an optic splitter, two optic phase shifters, an optic splitter, and an output waveguide. The device may include two curved waveguides. Either or both of the curved waveguides may have specially doped regions including PN junctions or MOS capacitors. The PN junctions or MOS capacitors may be alternatively connected to both slots of a coplanar waveguide forming the electrodes.

Abstract: A functionalized polymer includes the reaction product of a reactive polymer and a compound that includes an aryl group having at least one directly bonded OGp substituent, where Gp is a protecting group, and a substituent (Q) which is free of active hydrogen atoms and which is, or connects to the aryl group through, a moiety that includes a carbon-to-nitrogen multiple bond. The polymer can be provided from a solution that includes one or more types of ethylenically unsaturated monomers which include at least one type of polyene, particularly one or more conjugated dienes in certain embodiments. An active terminus of the resulting reactive polymer can react with the Q substituent of the compound so as to provide a polymer having as a terminal functionality the radical of a compound that includes an aryl group having at least one directly bonded OGp substituent.

Abstract: Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode. In another aspect, the Ge—Si avalanche photodiode utilizes an edge electric field buffer layer region to reduce the electric field along the sidewall of multiplication layer, where high electric field is applied for avalanche, thereby reducing probability of sidewall breakdown and enhancing reliability of the avalanche photodiode.

Abstract: Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current.

Abstract: A low-cost monolithic optical module for splitting one or more input optical beams to two or more output optical beams is provided. The one or more input optical beams are reflected by two or more total internal reflection (TIR) surfaces of the monolithic optical module. A light splitting ratio between the two or more output optical beams is predetermined by one or more physical features of the two or more TIR surfaces.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: Circuits, apparatuses, and methods are disclosed for oscillators. In one such example oscillator circuit, a plurality of delay stages are coupled in series. A variable delay circuit stage is coupled to the plurality of delay stages and is configured to delay a signal through the variable delay circuit stage by a variable delay. The variable delay increases responsive to a rising magnitude of a supply voltage provided to the variable delay circuit stage.

Abstract: An input buffer receiver circuit for electronic devices (e.g., memory chips) to receive reduced-swing and high bandwidth inputs to provide “buffered” output signals having symmetrical rising and falling delays, and without additional current dissipation over previous receiver circuits, is disclosed. The receiver circuit may include two differential amplifier pair stages (i.e., 4 total differential amplifiers). The first stage of differential amplifiers convert the single-ended input signal to a full-differential signal, which is converted back to a single-ended output signal by the second stage of differential amplifiers. The output of a P-diff first stage may be connected to the input of an N-diff second stage and the output of an N-diff first stage may be connected to the input of a P-diff second stage thereby creating a “cross coupled” structure. Various current saving and biasing methods may also be employed to keep operating current the same or lower than previous designs.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing aryl functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.

Abstract: A rubber formulation with good wet traction properties includes one or more elastomers and at least two types of particulate filler materials including at least one of which has a relatively high free surface energy in water (i.e., a supplemental filler). The formulation containing the supplemental filler(s) can provide a vulcanizate that has a British pendulum (skid) number that is at least ˜5% greater than that of a vulcanizate made from an essentially identical formulation that does not contain the supplemental filler(s). Also provided is a method for providing such a formulation which involves identifying one or more supplemental fillers having relatively high free surface energies in water, replacing at least 15% (by wt.) of one or more of the conventional particulate fillers in the formulation with an approximately equivalent volume of supplemental filler particles, and providing the modified formulation.

Abstract: Circuits, devices and methods are provided, such as an amplifier (e.g., a voltage regulator) that includes a feedback circuit that supplies negative feedback through a feedback path. One such feedback path includes a capacitance coupled in series with a “one-way” isolation circuit through which a feedback signal is coupled. The “one-way” isolation circuit my allow the feedback signal to be coupled from a “downstream” node, such as an output node, to an “upstream” node, such as a node at which an error signal is generated to provide negative feedback. However, the “one-way” isolation circuit may substantially prevent variations in the voltage at the upstream node from being coupled to the capacitance in the isolation circuit. As a result, the voltage at the upstream node may quickly change since charging and discharging of the capacitance responsive to voltage variations at the upstream node may be avoided.

Abstract: A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length.

Abstract: A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate.