Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: Systems and apparatuses are provided for an arbiter circuit for timing based ZQ calibration. An example system includes a resistor and a plurality of chips. Each of the plurality of chips further includes a terminal coupled to the resistor, a register storing timing information, and an arbiter circuit configured to determine whether the resistor is available based, at least in part, on the timing information stored in the register. The timing information stored in the register of each respective chip of the plurality of chips is unique to the respective chip among the plurality of chips.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing ?-methylstyrene functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: An apparatus is described comprising a bandgap reference circuit comprising: an amplifier including first and second inputs and an output; and a bandgap transistor coupled to the output of the amplifier at a control electrode thereof, the bandgap transistor being further coupled commonly to the first and second inputs of the amplifier at a first electrode thereof to form a feedback path. The apparatus further comprises a resistor coupled to the first electrode of the bandgap transistor.

Abstract: A compact and highly efficient coupling structure for coupling between DFB-LD and Si PIC edge coupler with suppressed return loss may include a DFB-LD, a Si PIC comprising at least one input edge coupler and at least one output edge coupler, a silica cover lid disposed on the Si PIC and aligned edge to edge with the Si PIC, a single-mode fiber aligned to the at least one output edge coupler of the Si PIC, a lens disposed between the DFB-LD and the at least one input edge coupler of the Si PIC, and an isolator bonded to a facet of the at least one input edge coupler with a first volume of an index matching fluid. The lens may be configured to minimize a mismatch between an output spot size of the DFB-LD and a spot size of the at least one input edge coupler of the Si PIC.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: A reference voltage generator is disclosed that may provide a plurality of reference voltages. A reference voltage generator may include a voltage divider, a multiplexer coupled to the voltage divider, an operational amplifier that may receive a voltage from the multiplexer, and a plurality of resistors that may receive an output from the operational amplifier. The reference voltages may be provided from output terminals coupled to the resistors. A reference voltage generator may include a voltage divider, two multiplexers coupled to the voltage divider, an operational amplifier coupled to each multiplexer, and a plurality of resistors coupled between the outputs of the two operational amplifiers. Reference voltages may be provided from output terminals coupled to the resistors.

Abstract: A semiconductor device including a temperature sensor includes a pull up circuit, a pull down circuit, a first additional current path, and a second additional current path. The pull up circuit is configured to generate a pull up current that contributes to generation of a first output current. The pull down circuit is operably coupled to the pull up circuit at an output node and configured to generate a pull down current that contributes to generation of a second output current. The first additional current path, when enabled, is configured to combine a first additional current with the pull up current to comprise the first output current. The second additional current path, when enabled, is configured to combine a second additional current with the pull down current to comprise the second output current. Respective enablement of the first additional current path and the second additional current path is complementary.

Abstract: Disclosed herein are rubber compositions suitable for use in tire treads comprising (a) at least one conjugated diene polymer or copolymer; (b) at least one filler; (c) a curative package; and (d) at least one of: (i) from 0.2 to 10 phr of at least one halogenated hydrocarbon wax, or (ii) from 0.2 to 10 phr of at least one silicone-containing wax comprising a functionalized polyalkylsiloxane, a functionalized polyalkylsilsesquioxane resin, or combinations thereof. In certain embodiments, the at least one halogenated hydrocarbon wax is a chlorinated hydrocarbon or a fluorinated hydrocarbon wax.

Abstract: A white balancing device and a method of driving the same are provided. The white balancing device includes a map generator and an automatic white balancing (AWB) block. The map generator is configured to generate an indoor-outdoor map comparing a first image and a second image generated by performing a wide dynamic range (WDR) algorithm on the first image. The AWB block is configured to generate a first white point with respect to an outdoor region and a second white point with respect to an indoor region using the indoor-outdoor map.

Abstract: A temperature sensor is disclosed. The temperature sensor includes an analog core having at least first and second circuit nodes and configured to provide a temperature dependent output, a multiplexer coupled to the first and second circuit nodes and configured for at least first and second states in each of which the first circuit node couples to a different circuit element and in each of which the second circuit node couples to a different circuit element, and a controller coupled to the analog core and configured to provide a temperature measurement that is an average of at least first and second readings of the temperature dependent output of the analog core, the first reading taken while the multiplexer is in the first state, and the second reading taken while the multiplexer is in the second state.

Abstract: Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

Abstract: An integrated optical coupling device may include a substrate, a coating layer disposed on the substrate, and a prism disposed on the coating layer. The prism may include a first surface and a second surface. The integrated optical coupling device may also include a first lens disposed on the first surface of the prism, a second lens disposed on the second surface of the prism, and an anti-reflection coating layer disposed on the first lens and the second lens.

Abstract: A reference voltage generator is disclosed that may provide a plurality of reference voltages. A reference voltage generator may include a voltage divider, a multiplexer coupled to the voltage divider, an operational amplifier that may receive a voltage from the multiplexer, and a plurality of resistors that may receive an output from the operational amplifier. The reference voltages may be provided from output terminals coupled to the resistors. A reference voltage generator may include a voltage divider, two multiplexers coupled. to the voltage divider, an operational amplifier coupled to each multiplexer, and a plurality of resistors coupled between the outputs of the two operational amplifiers. Reference voltages may be provided from output terminals coupled to the resistors.

Abstract: An imprinting method for forming an integrated optical coupling device on wafer level may include: providing a substrate, with a reflection coating disposed thereon; providing an imprinting mold, with void regions shaped according to a designed lens profile; forming a molding material on the substrate; pressing the imprinting mold on the molding material on the substrate; curing the molding material into a cured molding material; removing the imprinting mold; depositing an anti-reflection film on the cured molding material; and dicing to form an integrated optical coupling device.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing ?-methylstyrene functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: A ring optical modulator includes a SOI substrate, including at least first and second top silicon layers, and a silicon-based ring resonator formed on the SOI substrate. The silicon-based ring resonator includes first and second top silicon layers, a thin dielectric gate layer disposed between the top silicon layers, first and second electric contacts, and first rib-type waveguide and ring-shape rib-type waveguide formed on the second top silicon layer. The thin dielectric layer includes a first side in contact with the first top silicon layer and a second side in contact with the second top silicon layer. With electric signals applied on the electric contacts, free carriers accumulate, deplete or invert within the top silicon layers on the first and second sides of the thin dielectric gate layer beneath the ring-shape rib-type waveguide, simultaneously, and a refractive index of the ring-shape rib-type waveguide confining optical fields is modulated.

Abstract: An optical package for providing efficient coupling between a distributed feedback laser diode (DFB-LD) and a silicon photonic integrated-circuit chip (Si PIC) edge couplers with low return loss, as well as variations thereof, is described. The optical package may include a DFB-LD, a Si PIC, a single mode fiber or fiber array assembly, a lens and a spacer. The Si PIC may include an input edge coupler and an output edge coupler. The single mode fiber or fiber array assembly may be aligned to the output edge coupler. The lens may be disposed between the DFB-LD and the input edge coupler, and may be configured to minimize a mismatch between an output spot size of the DFB-LD and a spot size of the input edge coupler of the Si PIC. The spacer may be bonded to a facet of the input edge coupler with an index matching fluid.

Abstract: A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing ?-methylstyrene functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.