Abstract: Vulcanizates with desirable properties can be obtained from compounds incorporating polymers that include hydroxyl group-containing ?-methylstyrene functionalities. The functionalities can be incorporated by using any or all of appropriate initiators, monomers and optional terminating compounds. Such polymers exhibit excellent interactivity with both conventional and non-conventional fillers.

Abstract: Elastomeric compounds having increased cold flow resistance may be obtained by utilizing from 10-100 phr of a functionalized rubbery polymer containing specified types of functionalizing units, at least 0.01 phr of a multivalent metal organic salt and 0-90 phr of at least one additional rubbery polymer.

Abstract: An integrated optical coupling device may include a substrate, a coating layer disposed on the substrate, and a prism disposed on the coating layer. The prism may include a first surface and a second surface. The integrated optical coupling device may also include a first lens disposed on the first surface of the prism, a second lens disposed on the second surface of the prism, and an anti-reflection coating layer disposed on the first lens and the second lens.

Abstract: Example apparatuses and methods may detect when one or more supply voltage levels have reached a trigger voltage. An example apparatus may include a terminal, a voltage reference circuit and a voltage detector circuit. The terminal may be configured to receive a first voltage, and the voltage reference circuit may be coupled to the terminal. The voltage reference circuit may be configured to receive the first voltage and provide a second voltage responsive, at least in part, to the first voltage. The voltage detector circuit may be configured to respond, at least in part, to the first and second voltages, and further configured to produce an output signal when the first voltage reaches a target level. The voltage detector circuit may include a first transistor including a gate configured to receive the second voltage, and a first resistor coupled in series between the terminal and the transistor.

Abstract: A single-chip integrated circuit for high-speed optoelectronic transmitting and receiving is provided. The single-chip integrated circuit may include a laser driver, a limiting amplifier, a flash memory and a micro-programmed controller unit (MCU). The laser driver may be configured to accept a high-speed digital electrical signal and drive a laser diode to create an equivalent optical signal. The limiting amplifier may be configured to accept high-speed small signals from an optical detector and amplifiers and limit the high-speed small signals to create a uniform-amplitude digital electrical signal. The flash memory may be configured to store a program code and data related to transmitter and receiver circuits. The MCU may be configured to generate control signals to control the laser driver and the limiting amplifier according to the data stored in the flash memory.

Abstract: Various structures of an electro-optic device and fabrication methods thereof are described. A fabrication method is provided to fabricate an electro-optic device which may include a silicon-based rib-waveguide modulator which includes a first top silicon layer, having a first doped region that is at least partially doped with dopants of a first conducting type, a second top silicon layer, having a second doped region that is at least partially doped with dopants of a second conducting type, and a thin dielectric gate layer disposed between the first top silicon layer and the second top silicon layer. The second doped region may be at least in part directly over the first doped region. The modulator may also include a rib waveguide formed on the second top silicon layer, a first electric contact formed on the first top silicon layer, and a second electric contact formed on the second top silicon layer.

Abstract: Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.

Abstract: Disclosed herein are rubber compositions suitable for use in tire treads comprising (a) at least one conjugated diene polymer or copolymer; (b) at least one filler; (c) a curative package; and (d) at least one of: (i) from 0.2 to 10 phr of at least one halogenated hydrocarbon wax, or (ii) from 0.2 to 10 phr of at least one silicone-containing wax comprising a functionalized polyalkylsiloxane, a functionalized polyalkylsilsesquioxane resin, or combinations thereof. In certain embodiments, the at least one halogenated hydrocarbon wax is a chlorinated hydrocarbon or a fluorinated hydrocarbon wax.

Abstract: Elastomeric compounds having increased cold flow resistance may be obtained by utilizing from 10-100 phr of a functionalized rubbery polymer containing specified types of functionalizing units, at least 0.01 phr of a multivalent metal organic salt and 0-90 phr of at least one additional rubbery polymer.

Abstract: Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.

Abstract: A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

Abstract: A group of compounds defined by the general formula (I) can be used to anionically initiate polymerization of unsaturated monomers. In the formula, M is an alkali metal atom, R1 is an aryl group having at least one OR2 substituent group where each R2 is a group that is nonreactive toward M, and R is a hydrocarbyl group. The subject initiators can be used in semi-batch and continuous polymerization processes, even those which are performed at elevated temperatures.

Abstract: Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

Abstract: Disclosed herein are rubber compositions suitable for use in tire treads comprising (a) at least one conjugated diene polymer or copolymer; (b) at least one filler; (c) a curative package; and (d) at least one of: (i) from 0.2 to 10 phr of at least one halogenated hydrocarbon wax, or (ii) from 0.2 to 10 phr of at least one silicone-containing wax comprising a functionalized polyalkylsiloxane, a functionalized polyalkylsilsesquioxane resin, or combinations thereof. In certain embodiments, the at least one halogenated hydrocarbon wax is a chlorinated hydrocarbon or a fluorinated hydrocarbon wax.

Abstract: Circuits, devices and methods are provided, such as an amplifier (e.g., a voltage regulator) that includes a feedback circuit that supplies negative feedback through a feedback path. One such feedback path includes a capacitance coupled in series with a “one-way” isolation circuit through which a feedback signal is coupled. The “one-way” isolation circuit my allow the feedback signal to be coupled from a “downstream” node, such as an output node, to an “upstream” node, such as a node at which an error signal is generated to provide negative feedback. However, the “one-way” isolation circuit may substantially prevent variations in the voltage at the upstream node from being coupled to the capacitance in the isolation circuit. As a result, the voltage at the upstream node may quickly change since charging and discharging of the capacitance responsive to voltage variations at the upstream node may be avoided.

Abstract: In one aspect, an optical device comprises a monolithic optical module which includes a first total internal reflection (TIR) surface, a second TIR surface adjacent the first TIR surface, and a first optical port aligned with the first internal optical beam dividing interface. An interface between the first TIR surface and the second TIR surface forms a first internal optical beam dividing interface. An exterior surface of the first TIR surface and an exterior surface of the second TIR surface form a generally V-shaped notch on the monolithic optical module. A first optical beam entering the monolithic optical module through the first optical port and incident on the first internal optical beam dividing interface is partially reflected by the first TIR surface to travel in a first direction as a second optical beam and partially reflected by the second TIR surface to travel in a second direction as a third optical beam. The second direction is generally opposite to the first direction.

Abstract: Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

Abstract: Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current.

Abstract: A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length.

Abstract: A semiconductor device including a temperature sensor includes a pull up circuit, a pull down circuit, a first additional current path, and a second additional current path. The pull up circuit is configured to generate a pull up current that contributes to generation of a first output current. The pull down circuit is operably coupled to the pull up circuit at an output node and configured to generate a pull down current that contributes to generation of a second output current. The first additional current path, when enabled, is configured to combine a first additional current with the pull up current to comprise the first output current. The second additional current path, when enabled, is configured to combine a second additional current with the pull down current to comprise the second output current. Respective enablement of the first additional current path and the second additional current path is complementary.