Patents by Inventor Dong Seok Kim

Dong Seok Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190166333
    Abstract: Provided is a home monitoring method and apparatus. A home gateway executes receiving, from a mobile terminal, a request message for requesting home monitoring, providing, to the mobile terminal in response to the request message, monitoring information associated with a camera module included in at least one home device registered in advance and/or a position to be monitored, receiving, from the mobile terminal, selection information indicating a first camera module selected based on the monitoring information, transmitting, to the mobile terminal, image data captured and collected by the first camera module in response to the reception of the selection information, receiving, from the mobile terminal, a control command with respect to the first camera module, and transmitting the control command to a first home device including the first camera module.
    Type: Application
    Filed: January 30, 2019
    Publication date: May 30, 2019
    Inventors: Kyung-Jae KIM, Ji-Hyeon KWEON, Keun-Cheol LEE, Dong-Seok KIM, Hyun-Sik KIM
  • Publication number: 20190079147
    Abstract: The present invention relates to a device and a method for measuring a magnetic field and, more particularly, to a device and a method for measuring a magnetic field, wherein a spin current is in into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.
    Type: Application
    Filed: February 3, 2017
    Publication date: March 14, 2019
    Inventors: Kung-Won RHIE, Dong-Seok KIM, Sung-Jung JOO
  • Publication number: 20180292962
    Abstract: Disclosed is an electronic device. The present electronic device comprises a display, and a processor configured to display, through the display, a UI based on use patterns of a plurality of devices connected to a same network, wherein the UI comprises a device axis and a time axis, and provides information related to use of at least one device in a region where the device axis and the time axis intersect each other.
    Type: Application
    Filed: September 21, 2016
    Publication date: October 11, 2018
    Inventors: Yu-ri CHOI, Hee-sung PARK, Se-rin KO, Dong-seok KIM, Jeong-pyo LEE, Seung-hyun CHO
  • Publication number: 20180214452
    Abstract: Provided is a use of the prophylaxis, amelioration or therapy of intractable epilepsy, for example, Focal Cortical Dysplasia (FCD).
    Type: Application
    Filed: March 7, 2016
    Publication date: August 2, 2018
    Inventors: Jeong Ho LEE, Jae Seok LIM, Woo-II KIM, Dong Seok KIM, Hoon Chul KANG, Se Hoon KIM
  • Patent number: 9629346
    Abstract: The present invention relates to a technique for inducing epilepsy and a non-human animal model of epilepsy. More particularly, the present invention relates to a method for inducing epilepsy in an animal, a non-human animal model of epilepsy, and a method for manufacturing the same.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: April 25, 2017
    Assignees: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, YONSEI UNIVERSITY, UNIVERSITY—INDUSTRY FOUNDATION (UIF)
    Inventors: Jeong Ho Lee, Dong Seok Kim, Jae Seok Lim, Hoon Chul Kang
  • Patent number: 9518309
    Abstract: A method of manufacturing a porous metal foam having pores of nano size includes: manufacturing a porous polymer foam containing pores of nano size; and coating metal on the porous polymer foam through electroless plating. The present invention provides porous metal foams which contains nano-sized pores and hence, their specific surface area is maximized owing to the regularly-patterned nanoporous structure formed inside.
    Type: Grant
    Filed: December 31, 2012
    Date of Patent: December 13, 2016
    Assignee: KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Myoung-Geun Choi, Hyun-Gyung Jo, Hye-Ji Park, Yoon-Sook Noh, Yun-Sung Kim, Chang-Ui Ahn, Seok-Woo Jeon, Dong-Seok Kim, Do-Kyung Kim, Hee-Man Choe
  • Publication number: 20160172304
    Abstract: This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures, The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalis of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.
    Type: Application
    Filed: February 12, 2016
    Publication date: June 16, 2016
    Inventors: Nam-Yeal LEE, Seung-Jin YEOM, Sung-Won LIM, Seung-Hee HONG, Hyo-Seok LEE, Dong-Seok KIM, Seung-Bum KIM, Se-Jin KIM
  • Patent number: 9299800
    Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: March 29, 2016
    Assignees: Samsun Electronics Co., Ltd., Kyungpook National University Industry-Academic Cooperation
    Inventors: Hyuk-soon Choi, Jung-hee Lee, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, Jong-seob Kim, In-jun Hwang, Ki-ha Hong, Ki-sik Im, Ki-won Kim, Dong-seok Kim
  • Patent number: 9293362
    Abstract: This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 22, 2016
    Assignee: SK Hynix Inc.
    Inventors: Nam-Yeal Lee, Seung-Jin Yeom, Sung-Won Lim, Seung-Hee Hong, Hyo-Seok Lee, Dong-Seok Kim, Seung-Bum Kim, Sei-Jin Kim
  • Patent number: 9257540
    Abstract: A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: February 9, 2016
    Assignee: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Kungwon Rhie, Jin Ki Hong, Tae-Yueb Kim, Sung-Jung Joo, Jin-Seo Lee, Ku-Youl Jung, Dong-Seok Kim, Sun-Il Han
  • Publication number: 20160027899
    Abstract: A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a substrate and a MOS transistor formed on the substrate. The MOS transistor includes a first gate insulating layer formed on the substrate, a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness thicker than that of the first gate insulating layer, a gate electrode formed on the first gate insulating layer and the second gate insulating layer, a source region adjacent to the first gate insulating layer, and a drain region adjacent to the second gate insulating layer.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 28, 2016
    Inventors: Dong Seok KIM, Jeong Gwan LEE
  • Patent number: 9214348
    Abstract: A semiconductor device is fabricated by, inter alia, forming a sacrificial liner on an active portion of a semiconductor substrate, oxidizing the sacrificial liner to transform the sacrificial liner into a gate dielectric layer, and forming a gate on the gate dielectric layer.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: December 15, 2015
    Assignee: SK Hynix Inc.
    Inventors: Young Jin Son, Dong Seok Kim, Jin Yul Lee
  • Publication number: 20150340041
    Abstract: A mobile terminal is provided. The mobile terminal includes a voice receiving module configured to receive the voice of a user through a first application and to generate first voice data for the voice received through the first application, a control module configured to transmit the first voice data and user information corresponding to the first voice data to a service server and to request the service server to register the first voice data and the user information, and a communication module configured to transmit, to the service server, a request for the user information corresponding to the voice of the user received through a second application when the voice of the user is received through the second application.
    Type: Application
    Filed: May 19, 2015
    Publication date: November 26, 2015
    Inventors: Do-Jun YANG, Dong-Seok KIM, Se-Hyun PARK
  • Patent number: 9124891
    Abstract: A method and an apparatus of decoding a video signal are provided. The present invention includes the steps of parsing first coding information indicating whether a residual data of an image block in the enhanced layer is predicted from a corresponding block in the base layer, from the bitstream of the enhanced layer, and decoding the video signal based on the first coding information. And, the step of parsing includes the step of performing modeling of the first coding information based on second coding information indicating whether prediction information of the corresponding block in the base layer is used to decode the image block in the enhanced layer. Accordingly, the present invention raises efficiency of video signal processing by enabling a decoder to derive information on a prediction mode of a current block in a decoder instead of transferring the information to the decoder.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: September 1, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Byeong Moon Jeon, Doe Hun Yoon, Ji Ho Park, Seung Wook Park, Dong Seok Kim, Soung Hyun Um
  • Publication number: 20150221746
    Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
    Type: Application
    Filed: April 15, 2015
    Publication date: August 6, 2015
    Inventors: Hyuk-soon CHOI, Jung-hee LEE, Jai-kwang SHIN, Jae-joon OH, Jong-bong HA, Jong-seob KIM, In-jun HWANG, Ki-ha HONG, Ki-sik IM, Ki-won KIM, Dong-seok KIM
  • Patent number: 9084077
    Abstract: A method of controlling a wireless personal area network (PAN) device, such that the PAN device performs at least one from among a coordinator role, a router role, and an end device role in a plurality of networks by using a single physical layer includes setting a first role corresponding to a first network and a second role corresponding to a second network; acquiring activation interval information of the first network and the second network based on the first role and the second role that are set in correspondence to the first network and the second network, respectively; performing the first role during the activation interval of the first network based on the acquired activation interval information; and switching the first role to the second role and performing the second role during the activation interval of the second network.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: July 14, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-woo Lee, Dong-seok Kim, Sang-cheol Moon
  • Publication number: 20150143560
    Abstract: The present invention relates to a technique for inducing epilepsy and a non-human animal model of epilepsy. More particularly, the present invention relates to a method for inducing epilepsy in an animal, a non-human animal model of epilepsy, and a method for manufacturing the same.
    Type: Application
    Filed: November 14, 2014
    Publication date: May 21, 2015
    Inventors: JEONG HO LEE, DONG SEOK KIM, JAE SEOK LIM, HOON CHUL KANG
  • Patent number: 9035319
    Abstract: The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and second electrode, an insulating layer which covers the channel layer, and a third electrode which is formed to cover the insulating layer on the insulating layer.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: May 19, 2015
    Assignee: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Jung-hee Lee, Ki-sik Im, Dong-seok Kim, Hee-sung Kang, Dong-hyeok Son
  • Publication number: 20150065380
    Abstract: The present invention relates to epilepsy-inducing brain somatic mutations which are associated with intractable epilepsy caused by malformations of cortical development, and uses thereof. More particularly, the present invention relates to an mTOR (Mammalian target of rapamycin) gene having mutations in a nucleotide sequence or an mTOR protein having mutations in an amino acid sequence resulting from the mutations in the nucleotide sequence. Further, the present invention relates to a technique for diagnosing intractable epilepsy caused by malformations of cortical development using the gene or the protein.
    Type: Application
    Filed: September 2, 2014
    Publication date: March 5, 2015
    Inventors: Jeong Ho LEE, Dong Seok Kim, Hoon Chul Kang, Jae Seok Lim, Woo-II Kim
  • Patent number: D829094
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: September 25, 2018
    Assignee: Hyundai Global Service Co., Ltd.
    Inventors: Cheol-Soo Kang, Dong-Seok Kim, Se-Ryeong Kim