Abstract: A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.

Abstract: A method and an apparatus of decoding a video signal are provided. The present invention includes the steps of parsing first coding information indicating whether a residual data of an image block in the enhanced layer is predicted from a corresponding block in the base layer, from the bitstream of the enhanced layer, and decoding the video signal based on the first coding information. And, the step of parsing includes the step of performing modeling of the first coding information based on second coding information indicating whether prediction information of the corresponding block in the base layer is used to decode the image block in the enhanced layer. Accordingly, the present invention raises efficiency of video signal processing by enabling a decoder to derive information on a prediction mode of a current block in a decoder instead of transferring the information to the decoder.

Abstract: A method and an apparatus of decoding a video signal are provided. The present invention includes the steps of parsing first coding information indicating whether a residual data of an image block in the enhanced layer is predicted from a corresponding block in the base layer, from the bitstream of the enhanced layer, and decoding the video signal based on the first coding information. And, the step of parsing includes the step of performing modeling of the first coding information based on second coding information indicating whether prediction information of the corresponding block in the base layer is used to decode the image block in the enhanced layer. Accordingly, the present invention raises efficiency of video signal processing by enabling a decoder to derive information on a prediction mode of a current block in a decoder instead of transferring the information to the decoder.

Abstract: A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.

Abstract: A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.

Abstract: Provided is a home monitoring method and apparatus. A home gateway executes receiving, from a mobile terminal, a request message for requesting home monitoring, providing, to the mobile terminal in response to the request message, monitoring information associated with a camera module included in at least one home device registered in advance and/or a position to be monitored, receiving, from the mobile terminal, selection information indicating a first camera module selected based on the monitoring information, transmitting, to the mobile terminal, image data captured and collected by the first camera module in response to the reception of the selection information, receiving, from the mobile terminal, a control command with respect to the first camera module, and transmitting the control command to a first home device including the first camera module.

Abstract: A method of manufacturing a porous metal foam having pores of nano size includes: manufacturing a porous polymer foam containing pores of nano size; and coating metal on the porous polymer foam through electroless plating. The present invention provides porous metal foams which contains nano-sized pores and hence, their specific surface area is maximized owing to the regularly-patterned nanoporous structure formed inside.

Abstract: Provided is a semiconductor device. The semiconductor device includes a first insulation layer on a semiconductor substrate, the first insulation layer including a lower metal line, a second insulation layer on the first insulation layer, the second insulation layer including a metal head pattern, a thin film resistor pattern on the metal head pattern, a third insulation layer on the thin film resistor pattern, an upper metal line on the third insulation layer, a first via passing through the first, second, and third insulation layers to connect the lower metal line to the upper metal line, and a second via passing through the third insulation layer and the thin film resistor pattern to connect the metal head pattern to the upper metal line.

Abstract: This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.

Abstract: The present invention relates to an aqueous alkali-developable photosensitive polyimide precursor resin composition that is appropriate for highly heat-resistant transparent protection layers and insulation layers for liquid crystal display devices.

Abstract: The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a nitride based first and second electrode placed with a distance on a substrate, a nitride based channel layer which connects the first and second electrode, an insulating layer which covers the channel layer, and a third electrode which is formed to cover the insulating layer on the insulating layer.

Abstract: A semiconductor device is fabricated by, inter alia, forming a sacrificial liner on an active portion of a semiconductor substrate, oxidizing the sacrificial liner to transform the sacrificial liner into a gate dielectric layer, and forming a gate on the gate dielectric layer.

Abstract: The present invention relates to a control method of a refrigerator which operates a cooling cycle including two storage compartments, a compressor, a condenser, a valve, fans, and evaporators for cooling the respective storage compartments, with one of the fans (5) corresponding to the storage compartment for storing items at relatively low temperatures being activated for a set amount of time even after the compressor is deactivated at the completion of cooling of the storage compartment for storing items at relatively low temperatures.

Abstract: A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.

Abstract: A semiconductor device includes a step-type recess pattern formed in a substrate, a gate electrode buried in the recess pattern and having a gap disposed between the gate electrode and upper sidewalls of the recess pattern, an insulation layer filling the gap, and a source and drain region formed in a portion of the substrate at two sides of the recess pattern. The semiconductor device is able to secure a required data retention time by suppressing the increase of leakage current caused by the reduction of a design rule.

Abstract: In one embodiment, the method for decoding a video signal using inter layer prediction includes obtaining a residual signal of a corresponding block in a base layer from a base layer bitstream, scaling the residual signal of the corresponding block in the base layer, obtaining a residual signal of a current block in an enhanced layer from an enhanced layer bitstream, obtaining a prediction pixel value of the current block in the enhanced layer based on an intra prediction mode of the corresponding block in the base layer and a pixel value of a neighboring block in the enhanced layer, and reconstructing the current block by using the prediction pixel value of the current block, the residual signal of the current block.

Abstract: A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.

Abstract: Provided is a semiconductor device. The semiconductor device includes a first insulation layer on a semiconductor substrate, the first insulation layer including a lower metal line, a second insulation layer on the first insulation layer, the second insulation layer including a metal head pattern, a thin film resistor pattern on the metal head pattern, a third insulation layer on the thin film resistor pattern, an upper metal line on the third insulation layer, a first via passing through the first, second, and third insulation layers to connect the lower metal line to the upper metal line, and a second via passing through the third insulation layer and the thin film resistor pattern to connect the metal head pattern to the upper metal line.

Abstract: A method for managing a reference picture with a decoder is disclosed. The method for managing a reference picture includes storing a decoded picture including quality base picture and quality enhanced picture in a buffer, marking the quality base picture and the quality enhanced picture as a reference picture, marking the quality base picture as distinct information, managing the quality base picture and the quality enhanced picture using an adaptive memory management method or a sliding window method.

Abstract: A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.