Abstract: A semiconductor device includes first and second active patterns disposed on a substrate, a field insulating film disposed between the first and second active patterns, a first gate structure intersecting the first active pattern, and a second gate structure intersecting the second active pattern, in which the first gate structure includes a first gate insulating film on the first active pattern, a first upper insertion film on the first gate insulating film, and a first upper conductive film on the first upper insertion film, and the second gate structure includes a second gate insulating film on the second active pattern, a second upper insertion film on the second gate insulating film, and a second upper conductive film on the second upper insertion film. Each of the first and second upper insertion films may include an aluminum nitride film. Each of the first and second upper conductive films may include aluminum.

Abstract: According to an embodiment of the present disclosure, a method of detecting a white matter lesion based on a medical image performed by a computing device is disclosed. The method may include: receiving a medical image including at least one brain region; and estimating a first white matter lesion and a second white matter lesion based on the medical image using a pre-trained neural network model.

Abstract: The present disclosure relates to an optical fiber ribbon, which is a component included in a high-density optical fiber cable including high-density optical fibers (which are installed in a limited space such as a conduit line) per unit area to build a large-capacity communication network, in which bonding of optical fibers is maintained to allow the optical fibers to be rolled in a width direction, and which is configured to achieve an optimal separation force on each bonding region in a longitudinal direction of the optical fibers and a direction perpendicular to the optical fibers, thereby improving workability in splitting or connecting the optical fiber ribbon and preventing inadvertent separation of the optical fibers of the optical fiber ribbon during the manufacture of the optical fiber cable.

Abstract: A device for evaluating integrity of an underground structure by using electromagnetic waves includes a plurality of main reinforcing bars arranged in a vertical direction in an underground structure, a plurality of measurement cables extending vertically to be adjacent to the main reinforcing bars, respectively, at least one impedance change unit which is provided on each of the measurement cables, is electrically connected to the measurement cable, and has a characteristic impedance different from a characteristic impedance of the measurement cable, and an electromagnetic wave measurement unit for detecting a change point of a characteristic impedance as a defect point of the underground structure by providing an electromagnetic wave by using, as a signal transmission line, one of the plurality of measurement cables and one of the plurality of main reinforcing bars, or one pair of measurement cables selected from the plurality of measurement cables.

Abstract: According to an embodiment of the present disclosure, a method of detecting a white matter lesion based on a medical image performed by a computing device is disclosed. The method may include: receiving a medical image including at least one brain region; and estimating a first white matter lesion and a second white matter lesion based on the medical image using a pre-trained neural network model.

Abstract: Disclosed is a method for predicting disease based on a medical image performed by a computing device. The method includes: generating a feature vector related to predictive values of brain disease for each of 2D medical images included in a 3D medical image, using a pre-trained first model; estimating importance indicating prediction accuracy for each of the 2D medical images based on the feature vector, using a pre-trained second model; and selecting at least one model input image suitable for prediction of the brain disease from among the 2D medical images based on the importance.

Abstract: Disclosed is a method for analyzing a thickness of a cortical region, performed by a computing device. The method may include: extracting a plurality of interfaces included in a cortical region based on a mask generated from a medical image including at least one brain region; and estimating a thickness of the cortical region based on the plurality of interfaces.

Abstract: The present application relates to a vector for delivering an active agent to the nervous system. In one embodiment of the present application, a vector for delivering an active agent in which one or more TTR ligands are conjugated to the surface of an adeno-associated virus is provided.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A method for managing a plurality of federated learning models incorporated to a device includes monitoring state information of the computer device to which a plurality of federated learning models is mounted; and performing learning scheduling on the plurality of federated learning models based on the state information and requirements for each model.

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

Abstract: A semiconductor package includes a semiconductor chip having at least one chip pad disposed on one surface thereof; a wiring pattern disposed on top of the semiconductor chip and having at least a portion thereof in contact with the chip pad to be electrically connected to the chip pad; and a solder bump disposed on outer surface of the wiring pattern to be electrically connected to the chip pad through the wiring pattern.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: A test handler includes a pusher which includes a pusher end which comes into contact with a DUT (Device Under Test) to transfer heat, and a pusher body which conducts heat to the pusher end, the pusher end separating a test tray for fixing the DUT and the pusher body from each other; a porous match plate including a pusher arrangement region in which the pusher body is placed, and a plurality of holes placed adjacent to the pusher arrangement region; a heater placed on an upper surface of the porous match plate to control temperature of the pusher; and an airflow input port placed on the heater to provide the airflow to the plurality of holes, in which the airflow passes through the plurality of holes and passes through a separated space between the test tray and the pusher body.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: Provided is a module mounted in a server to share a block-level storage and resources. The module includes: a HBA card unit for connection to an external server; an internal disk unit providing a storage space inside a server; a setting unit allocating the storage space of the internal disk unit; a target driver unit implementing a SCSI protocol, communicating with the external server and setting volumes to a storage mode or a server mode; and a target core unit routing data of the internal disk unit and the target driver unit depending on the storage mode or the server mode. The storage mode allows the volumes to be used as a storage of the external server. The server mode allows the volumes to be used as a storage inside the server. The target driver unit can switch the volumes from the server mode to the storage mode.

Abstract: The present invention relates to an anode active material including a composite of lithium titanium oxide (LTO), a silicon-containing material and crystalline carbon, a method for manufacturing the same, and a lithium secondary battery including the same. The composite according to the present invention satisfies high capacity, high energy density and high lifespan stability, improves fast charging characteristics, and also improves mechanical strength, so a lithium secondary battery using the composite as an anode active material can be usefully used for a next-generation electric vehicle, energy storage systems, etc.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: Disclosed is a method for predicting disease based on a medical image performed by a computing device. The method includes: generating a feature vector related to predictive values of brain disease for each of 2D medical images included in a 3D medical image, using a pre-trained first model; estimating importance indicating prediction accuracy for each of the 2D medical images based on the feature vector, using a pre-trained second model; and selecting at least one model input image suitable for prediction of the brain disease from among the 2D medical images based on the importance.