Abstract: A light source module according to some example embodiments includes a first substrate and a plurality of second substrates. The first substrate includes a plurality of connectors configured to at least receive a supply of electrical power and a plurality of first connection pads that are configured to be electrically connected to the plurality of connectors. The second substrates each include a plurality of mounting elements on an upper surface and a plurality of second connection pads on a lower surface of the second substrate and configured to be electrically connected to the plurality of mounting elements. Each mounting element may be connected to a separate light-emitting device. A plurality of connection members may electrically connect the first connection pads of the first substrate to the plurality of second connection pads of the plurality of second substrates.

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A graphene nanosensor is capable of: simply, quickly and accurately detecting RNA biomarkers that have disease-specific over-expression, as well as an expression level thereof, in living tissues or cells; obtaining a product with high reliability and resolution. The graphene nanosensor enables rapid diagnosis of a disease and being helpful for establishing treatment policy of the disease. The graphene nanosensor may rapidly and simply detect a target RNS with high sensitivity at low costs, thereby expecting superior effects when used in clinical applications and thus replacing the FISH method.

Abstract: A method of downloading a resource in a mobile environment includes detecting an attempt to access at least one server from a mobile terminal, executing a thread for each server to which the attempt to access is made, based on a multi-thread, downloading a resource of the at least one server through the corresponding thread, the resource being compressed based on a file unit, and unpacking the compressed resource, in which the threads are executed in parallel in the order of servers to which the attempt to access is made.

Abstract: A method of downloading a resource in a mobile environment includes detecting an attempt to access at least one server from a mobile terminal, executing a thread for each server to which the attempt to access is made, based on a multi-thread, downloading a resource of the at least one server through the corresponding thread, the resource being compressed based on a file unit, and unpacking the compressed resource, in which the threads are executed in parallel in the order of servers to which the attempt to access is made.

Abstract: A method of fabricating a LED module includes preparing a circuit board, such that the circuit board includes a reflective laminate around a chip mounting region and an electrode pad in the chip mounting region, preparing a mask, such that the mask includes a protruding portion with a discharge hole, and the protruding portion is inserted into a space surrounded by the reflective laminate, dispensing solder paste onto the electrode pad using the mask, and bonding an electrode of a LED chip to the electrode pad of the circuit board using the solder paste.

Abstract: A semiconductor device includes active regions on a semiconductor substrate, gate structures on separate, respective active regions, and source/drain regions in the semiconductor substrate on opposite sides of separate, respective gate structures. Each separate gate structure includes a sequential stack of a high dielectric layer, a first work function metal layer, a second work function metal layer having a lower work function than the first work function metal layer, and a gate metal layer. First work function metal layers of the gate structures have different thicknesses, such that the gate structures include a largest gate structure where the first work function metal layer of the largest gate structure has a largest thickness of the first work function metal layers. The largest gate structure includes a capping layer on the high dielectric layer of the largest gate structure, where the capping layer includes one or more impurity elements.

Abstract: A semiconductor device including a substrate; a first and second active region on the substrate; a first recess intersecting with the first active region; a second recess intersecting with the second active region; a gate spacer extending along sidewalls of the first and second recess; a first lower high-k dielectric film in the first recess and including a first high-k dielectric material in a first concentration and a second high-k dielectric material; a second lower high-k dielectric film in the second recess and including the first high-k dielectric material in a second concentration that is greater than the first concentration, and the second high-k dielectric material; a first metal-containing film on the first lower high-k dielectric film and including silicon in a third concentration; and a second metal-containing film on the second lower high-k dielectric film and including silicon in a fourth concentration that is smaller than the third concentration.

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

Abstract: A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

Abstract: A method for labeling exosomes with a radioactive substance using an amine group on surfaces of the exosomes includes providing a cell-derived exosome, treating a surface of the exosome with N-hydroxysuccinimide-azadibenzocyclooctyne (NHS-ADIBO), and mixing the treated exosome with N3-introduced chelator-radioactive substance to conduct a reaction between the chelator and an amine group present on the surface of the exosome, wherein the radioactive substance is introduced inside the exosome by the above reaction. The exosomes can be stably labeled at high labeling efficiency, and the exosomes can be favorably used as an agent for nuclear medicine imaging and therapeutic imaging for confirming the biological distribution of exosomes and whether the exosomes move to target organs and target diseases in animals including a human being.

Abstract: An electronic device is provided. The electronic device includes a receiving circuit configured to wirelessly receive power and output AC power, a rectifying circuit configured to rectify the AC power from the receiving circuit, wherein the rectifying circuit may include a first P-MOSFET configured to transfer a positive amplitude of power to an output terminal of the rectifying circuit while the AC power has the positive amplitude and to prevent transferring a negative amplitude of power to the output terminal of the rectifying circuit while the AC power has the negative amplitude, and a forward loss compensating circuit connected with the first P-MOSFET configured to reduce a threshold voltage of the first P-MOSFET while the AC power has the positive amplitude.

Abstract: Flexible LED assemblies that have coplanar integrated conductive features upon which an LED can be mounted, and methods of making such LED assemblies are described. The flexible LED assembly includes a flexible polymer substrate, a first conductive feature, a second conductive feature and an LED. The first conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The second conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The first and second conductive features are separated by a gap therebetween. The LED is mounted on both the first and second conductive features, and the first and second conductive features are substantially coplanar with one another.

Abstract: A cutter for trimming a tread of a tire includes a cutting plate which has a plurality of cutting slits sequentially formed at a lower end thereof to cut over-flow rubber formed on the tread of a tire, and a handle coupled to the cutting plate configured for a user to hold to cut the over-flow rubber using the cutting plate. The cutting plate has a plurality of grooves formed on a rear surface thereof to vertically guide and discharge the over-flow rubber cut by the cutting slits for trimming the tread and prevent over-flow rubber discharged in a process of trimming the tire from scattering.

Abstract: A clock and data recovery circuit is disclosed herein. The clock and data recovery circuit includes a phase detection unit, a charge pump, a loop filter, a voltage control oscillator, and a frequency detection unit. The voltage control oscillator has oscillation frequency that is variable in response to a frequency adjustment signal, and outputs an oscillation signal. The frequency detection unit includes a reference clock divider, a counter, and an oscillation frequency control unit. The reference clock divider generates a count-enable signal based on a reference clock signal. The counter generates an oscillation count signal by counting the pulses of the oscillation signal of the voltage control oscillator or the pulses of divided signals resulting from dividing the oscillation signal while the count-enable signal is being enabled. The oscillation frequency control unit compares a target count value with the value of the oscillation count signal, and outputs the frequency adjustment signal.

Abstract: The present invention discloses a cutter for trimming a tread of a tire. The cutter includes a cutting plate which has a plurality of cutting slits sequentially formed at a lower end thereof to cut over-flow rubber formed on the tread of a tire; and a handle which is coupled to the cutting plate, and is configured for a user to hold to cut the over-flow rubber using the cutting plate. The cutting plate has a plurality of grooves formed on a rear surface thereof to vertically guide and discharge the over-flow rubber cut by the cutting slits. According to the present invention, it is possible to prevent a reduction in a lifespan due to a decrease in hardness of a cutting plate caused by friction heat generated in a process of using the cutter for trimming the tread of a tire, and prevent over-flow rubber discharged in a process of trimming the tire from scattering.

Abstract: The present invention relates to a nanoparticle having a linker connected to a long alkane or alkene chain, and a method for preparing the nanoparticle. The alkyl chain of C10-30 introduced with a ligand of the present invention can be coated on a hydrophobic nanoparticle through a noncovalent bond, enabling easy introduction of various ligands to the nanoparticle, and the nanoparticle having various functional groups prepared using the method can be applied to fluorescent detection, MRI, raman spectroscopy, optical detection, PET, SPECT, or gamma image device, and the ligand of the visualization agents can be modified to be used for new vessels detection, cancer cell detection, immunocyte detection, hepatocyte detection, cell death detection, and gene detection.

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.