Abstract: A test driver selection unit configured to enable a plurality of test driver selection signals in response to a test pulse and a test clock, and a plurality of drivers configured to receive the plurality of test driver selection signals, wherein each of the plurality of drivers is configured to output an output signal to a data bump in response to a test driver selection signal, data, and an output enable signal, and to receive a first driving voltage and a second driving voltage.

Abstract: A memory system, including a plurality of stacked slices and a controller electrically coupled to the plurality of slices, includes: the plurality of slices configured to share a command in a preset number unit, wherein a slice performs a data input/output operation; and the controller configured to generate the command and a control signal for selecting slices in the preset number unit from the plurality of slices.

Abstract: A The semiconductor integrated circuit includes a test input/output port including test pads; an internal input interface configured to generate an internal clock, an internal address, an internal command, internal data and temporary storage data in response to external signals through the test input/output port; and an error detection block configured to determine whether the internal data and the temporary storage data are the same, and output a result through one test pad of the port. The internal input interface includes a data input/output block which generates the internal data and the data input/output block includes a temporary storage part which stores the internal data as the temporary storage data, a data output part which receives the temporary storage data, and a data input part which receives an output of the data output part and outputs it as the internal data.

Abstract: Methods of manufacturing a resistance change layer and a resistive random access memory device are provided. The method of manufacturing a resistance change layer includes forming a preliminary resistance change layer including an oxide semiconductor material on a substrate and irradiating the preliminary resistance change layer with an electron beam to a predetermined depth. On a path along which the electron beam is irradiated, a composition ratio of the resistance change layer changes in a direction in which a density of oxygen vacancies of the oxide semiconductor material increases. Accordingly, the composition ratio of a resistance change layer is easily controlled using electron beam irradiation. In addition, since interfacial surface roughness and internal defect structures of an oxide semiconductor are controlled by electron beam irradiation, a resistance change ratio is improved and thereby device characteristics can be improved.

Abstract: A semiconductor device includes a first die, a second die coupled to the first die through a Through-Silicon-Via (TSV), and a test circuit suitable for measuring a resistance of the TSV by controlling an amount of current flowing through the TSV.

Abstract: An integrated circuit includes first and second bump pads spaced from each other with a first space, configured to receive differential signals for a normal operation, and at least one redundant bump pad spaced from the first bump pad with a second space smaller than the first space, configured to receive a signal for a repair to the differential signals.

Abstract: A data output circuit includes a data driving unit suitable for driving a data transmission line with a driving voltage corresponding to data during a data transmission operation, and a charging/discharging unit suitable for storing charges on the data transmission line and reuse the stored charges as the driving voltage.

Abstract: Disclosed herein is a printed circuit board including: an insulating layer having first and second surfaces; a first circuit layer formed on the first surface of the insulating layer and including at least one first circuit pattern; a second circuit layer formed on the first circuit layer and including at least one second circuit pattern; and an insulating film formed in an insulating region of the first and second circuit layers.

Abstract: A data output circuit includes an output control signal generation unit configured to generate output control signals in response to an output enable bar signal and a delay locked clock signal and a register configured to output stored data in response to the output control signals.

Abstract: Disclosed is a composite sound absorbing material for a vehicle, which improves a sound absorption coefficient of a low-to-mid frequency region and provides a weight reduction effect, and a method of manufacturing the composite sound absorbing material. The method includes a first step of laminating fabric in a sheet form with a film by using a bonding tool and a second step of puncturing the fabric laminated with the film to thereby manufacture punctured nonwoven fabric.

Abstract: Disclosed are a method and apparatus capable of enhancing a closed loop multi-input multi-output (MIMO) capacity through distributed discrete power control in the case of cooperatively transmitting information to multiple users through a downlink.

Abstract: Disclosed herein are a printed circuit board (PCB) and a method of manufacturing the same. The PCB includes a core layer, metal bumps embedded in the core layer, one surface of the metal bumps being opened to the outside, and a solder resist layer including an opening is manufactured by a separating substrate manufacture method. In the PCB, empty space between the bumps is filled with an insulating material instead of solder resist, and thus, a problem in terms of an empty space between bumps is addressed without requiring a new solder resist process.

Abstract: An integrated circuit includes first and second bump pads spaced from each other with a first space, configured to receive differential signals for a normal operation, and at least one redundant bump pad spaced from the first bump pad with a second space smaller than the first space, configured to receive a signal for a repair to the differential signals.

Abstract: An address input circuit of a semiconductor device includes: an address latch unit configured to generate latch addresses, by latching addresses sequentially provided by an external, according to a command decoding signal, wherein latch timings of each of the addresses are adjusted differently from one another; and a command decoder configured to decode a command provided from the external and generate the command decoding signal.

Abstract: Disclosed is a composite sound absorbing material for a vehicle, which improves a sound absorption coefficient of a low-to-mid frequency region and provides a weight reduction effect, and a method of manufacturing the composite sound absorbing material. The method includes a first step of laminating fabric in a sheet form with a film by using a bonding tool and a second step of puncturing the fabric laminated with the film to thereby manufacture punctured nonwoven fabric.

Abstract: An input buffer includes a first amplification block, a second amplification block, and a buffer block. The first amplification block is configured to be driven by an external voltage, to differentially amplify an input signal and a reference voltage in response to a bias voltage, and to subsequently generate first and second differential signals. The second amplification block is configured to be driven by an internal voltage, to differentially amplify the first and second differential signals, and to generate an output signal. The buffer block is configured to be driven by the internal voltage, to buffer the output signal, and to output an inverted output signal.

Abstract: Disclosed is a method for receiving data in a Multi Input Multi Output (MIMO) system, the method comprising: decoding data transmitted from a transmitter by using one beam-forming vector included in a codebook that beam-forming vectors are formed in a hierarchical structure according to at least one of change directions of radio channels, the number of channel change directions, and a change rate; determining whether to update the beam-forming vector based on the radio channel changes; selecting other beam-forming vector included in the codebook having a hierarchical structure when it is determined that update for the beam-forming vector is required; feed-backing information about an index indicating where the selected beam-forming vector is located in the hierarchical structure of the codebook to the transmitter; and decoding data received from the transmitter by using the selected beam-forming vector.

Abstract: A system package includes an interposer, a control chip mounted onto the interposer, and first and second semiconductor chips mounted onto the interposer and electrically coupled to the control chip through the interposer. The first and second chips are configured to operate under the control of the control chip. The first semiconductor chip is positioned along one side of the control chip, and the second semiconductor chip is positioned along another side of the control chip.

Abstract: A semiconductor integrated circuit including first semiconductor chip and second semiconductor chip that are vertically stacked, wherein the first semiconductor chip includes a first column data driving circuit configured to transmit internal data to the second semiconductor chip in a DDR (double data rate) scheme based on an internal strobe signal, and a first column strobe signal driving circuit configured to generate first column strobe signals that are source-synchronized with first column data transmitted to the second semiconductor chip by the first column data driving circuit, based on the internal strobe signal, and transmit the first column strobe signals to the second semiconductor chip.

Abstract: Disclosed is a tufted carpet for a vehicle. The tufted carpet for the vehicle is manufactured by implanting a spun yarn into a base fabric, wherein the spun yarn is formed from a material mixture of about 85 wt % to about 95 wt % polyethylene terephthalate (PET) and about 5 to about 15 wt % polytrimethylene terephthalate (PTT).