Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.

Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.

Abstract: The present disclosure provides a method for detecting a display substrate and a device for detecting a display substrate. The method includes: exciting a threshold voltage of a driving transistor in each pixel driving circuit in the display substrate, so that the threshold voltage of the driving transistor with a shifted threshold voltage is further shifted; inputting a detection signal to each pixel driving circuit in the display substrate, where the detection signal is a signal enabling the pixel driving circuit to operate normally; and judging whether the display substrate is normal or not according to the voltage output by each pixel driving circuit.

Abstract: An optical lens assembly and an imaging device. The optical lens assembly includes, in order from an object side to an image side: a first lens (L1) being a meniscus lens having a negative focal power, the first lens having an object side surface (S1) being a convex surface, and an image side surface (S2) being a concave surface; a second lens (L2) having a negative focal power, an image side surface (S4) of the second lens being a concave surface; a third lens (L3) being a meniscus lens having a positive focal power, the third lens having an object side surface (S5) being a concave surface, and an image side surface (S6) being a convex surface; a fourth lens (L4); a fifth lens (L5) cemented to the fourth lens; and a sixth lens (L6) having a positive focal power.

Abstract: An optical lens comprises: a first lens (L1) having a negative focal power; a second lens (L2); a third lens (L3); a fourth lens (L4); a fifth lens (L5), wherein the fourth lens (L4) and the fifth lens (L5) forms an achromatic lens group; and a sixth lens (L6), wherein the first lens (L1), the second lens (L2), the third lens (L3), the fourth lens (L4), the fifth lens (L5), and the sixth lens (L6) are sequentially disposed along a direction from an object side to an image side, wherein the first lens (L1) has at least one object surface (S1) facing the object side, and the object surface (S1) of the first lens (L1) is convex, and wherein the second lens (L2) has at least one image surface (S4) facing the image side, and the image surface (S4) of the second lens (L2) is convex so as to facilitate forming a concentric circle structure.

Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.

Abstract: A film patterning method, an array substrate, and a manufacturing method of an array substrate are disclosed. The film patterning method includes: applying photoresist on a film to be patterned; performing exposure and development on the photoresist, a region corresponding to a completely removed portion of the photoresist after the exposure and the development being a first region; post-baking the photoresist, so that the photoresist is melted and collapsed to change the region corresponding to the completely removed portion into a second region, the photoresist after post-baking forms into a mask pattern; and patterning the film by using the mask pattern as a mask.

Abstract: The present invention relates to the technical field of display and provides a test circuit, an array substrate, and a display panel. The array substrate comprises a plurality of signal lines. The test circuit comprises: a plurality of first switch units having one-to-one correspondence with the signal lines, the first switch units having first ends connected to first ends of the signal lines, second ends mutually short-circuited, and control ends connected to first control signal ends; and a plurality of second switch units having one-to-one correspondence with the signal lines, the second switch units having first ends connected to second ends of the signal lines, second ends mutually short-circuited, and control ends connected to second control signal ends, wherein the plurality of first switch units and the plurality of second switch units have one-to-one correspondence with the signal lines.

Abstract: Provided are a detection method and a detection device, the detection method includes: in a first writing stage, providing an active voltage to each data line, each power supply terminal, both ends of a first gate line to-be-detected, an absolute value of the active voltage of each data line is smaller than that of the active voltage of the power supply terminal, an absolute value of the active voltage of the first gate line to-be-detected is smaller than that of the active voltage of each data line; in a first detection stage, maintaining the active voltage of the power supply terminal, providing an inactive voltage to the first gate line to-be-detected and providing an active voltage to the data line, detecting voltages at second electrodes of storage capacitors corresponding to the first gate line to-be-detected, determining whether the first gate line to-be-detected has breakpoint according to the detected voltages.

Abstract: An optical lens assembly is provided. The optical lens assembly includes: a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens, which are arranged sequentially from an object side to an image side along an optical axis. The first lens has a negative refractive power, and an object-side surface of the first lens is a convex surface, and an image-side surface of the first lens is a concave surface. The second lens has a positive refractive power, an object-side surface of the second lens is a concave surface, and an image-side surface of the second lens is a convex surface. The third lens has a refractive power. The fourth lens has a refractive power. The fifth lens has a refractive power, the sixth lens has a refractive power, and the seventh lens has a positive refractive power.

Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.

Abstract: Disclosed are an optical lens, and an imaging device comprising the optical lens.

Abstract: An optical lens comprises: a first lens having a negative focal power; a second lens; a third lens; a fourth lens; a fifth lens, wherein the fourth lens and the fifth lens forms an achromatic lens group; and a sixth lens, wherein the first lens, the second lens, the third lens, the fourth lens, the fifth lens, and the sixth lens are sequentially disposed along a direction from an object side to an image side, wherein the first lens has at least one object surface facing the object side, and the object surface of the first lens is convex, and wherein the second lens has at least one image surface facing the image side, and the image surface of the second lens is convex so as to facilitate forming a concentric circle structure.

Abstract: A sputtering system and a deposition method are provided. The sputtering system includes at least two sputtering chambers. Each of the at least two sputtering chambers includes a plurality of targets separated from each other and a plurality of target pedestals. Each of the plurality of targets is mounted on a corresponding target pedestal of the plurality of target pedestals, and a gap between two adjacent targets of the plurality of targets has a width sufficient to accommodate at least one of the plurality of targets.

Abstract: An array substrate and a display device are provided in embodiments of the present disclosure. The array substrate includes a base substrate, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source-drain electrode electrically conductive layer, a passivation layer, and a first light shielding layer. The first light shielding layer is disposed on a side of the passivation layer facing away from the interlayer insulating layer. An orthographic projection of the first light shielding layer on the base substrate at least partially overlaps with an orthographic projection of the active layer on the base substrate, and the first light shielding layer is formed by a photoresist material.

Abstract: The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.

Abstract: The disclosure provides a display substrate, a method for fabricating the same, a display device. The display substrate includes a base and a display function layer on the base. The display function layer includes pixel circuits arranged in first and second directions, and data lines in the second direction. Each pixel circuit includes a driving capacitor and a driving transistor, a first electrode of the driving capacitor is in a same layer as the data lines; at least one data line includes at least one first sub-data line segment and at least one second sub-data line segment, a width of the first sub-data line segment is less than that of the second sub-data line segment, an orthographic projection of the first sub-data line on a virtual straight line in the second direction at least partially overlaps with that of the first electrode closest thereto on the virtual straight line.

Abstract: The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N2, NH3 and SiH4 in a volume ratio of N2:NH3:SiH4=(10˜20):(5˜10):(1˜2), such that a stress value of the inorganic insulating film layer is reduced to be less than or equal to a threshold, and the inorganic insulating layer comprises silicon nitride.

Abstract: An optical lens assembly and an imaging device including the optical lens assembly are disclosed. The optical lens assembly, from an object side to an image side along an optical axis may sequentially include: a first lens, a second lens, a third lens, a fourth lens and a fifth lens. The first lens is of meniscus shape, at least one of surfaces of the second lens is a convex surface, one of the third and fourth lens has a positive refractive power, and the other has a negative refractive power, wherein the third lens and the fourth lens are cemented to form an cemented lens, at least one of surfaces of the fifth lens is a concave surface, and at least one of the first lens, second lens or the fifth lens has a positive refractive power.

Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.