Patents by Inventor Dongfang Wang

Dongfang Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10581029
    Abstract: The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: March 3, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jun Wang, Ce Zhao, Dongfang Wang, Bin Zhou
  • Publication number: 20200066901
    Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
    Type: Application
    Filed: June 4, 2019
    Publication date: February 27, 2020
    Inventors: Luke DING, Zhanfeng CAO, Jingang FANG, Liangchen YAN, Ce ZHAO, Dongfang WANG
  • Publication number: 20200067012
    Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.
    Type: Application
    Filed: May 10, 2019
    Publication date: February 27, 2020
    Inventors: Tongshang SU, Dongfang WANG, Qinghe WANG, Ce ZHAO, Bin ZHOU, Liangchen YAN
  • Publication number: 20200066195
    Abstract: An inspection device includes: a driving circuit, configured to input display data of an image to a pixel electrode of the array substrate; a light-emitting device comprising a first electrode, a second electrode, and a plurality of light-emitting units arranged between the first electrode and the second electrode, and the plurality of light-emitting units is capable of emitting light under the effect of an electric field between the first electrode and the second electrode; a test circuit, configured to electrically connect the first electrode of the light-emitting device to the pixel electrode of the array substrate, and input a first electrical signal to the second electrode of the light-emitting device, to generate the electric field; and a processing circuit, configured to acquire optical information of the light emitted by the light-emitting device, and determine whether there is an electrical defect in the array substrate according to the optical information.
    Type: Application
    Filed: April 30, 2019
    Publication date: February 27, 2020
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Guangyao LI, Bo MAO, Xuehai GUI, Qinghe WANG, Jun WANG, Dongfang WANG, Liangchen YAN
  • Publication number: 20200058895
    Abstract: Disclosed are a pixel defining layer and a manufacturing method thereof, and a display panel, in the field of display technologies. An auxiliary electrode pattern is on a side of a substrate and configured to be electrically connected to a cathode in a display panel; and a first sub-defining layer is on a side of the auxiliary electrode pattern away from the substrate. A pixel defining layer has a plurality of openings, and the plurality of openings all pass through the auxiliary electrode pattern and the first sub-defining layer. The opening is configured to accommodate a material of a light emitting layer. An orthographic projection of the auxiliary electrode pattern on the substrate is within an orthographic projection of the first sub-defining layer on the substrate.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 20, 2020
    Inventors: Dongfang Wang, Tongshang Su, Bin Zhou
  • Publication number: 20200058724
    Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and
    Type: Application
    Filed: May 20, 2019
    Publication date: February 20, 2020
    Inventors: Qinghe Wang, Dongfang Wang, Tongshang Su, Rui Peng, Leilei Cheng, Yang Zhang, Jun Wang, Guangyao Li, Liangchen Yan, Guangcai Yuan
  • Publication number: 20200056033
    Abstract: The present disclosure provides a pixel defining layer and a preparation material thereof, and a display substrate and a preparation method thereof, and relates to the field of display technologies. The preparation material of the pixel defining layer comprises the following components in mass percentages: 5%-30% of a lyophobic film-forming polymer, 0.5%-1% of lyophilic magnetic nanoparticles, 0.5%-2% of a photoinitiator, 0.1%-1% of a reactive monomer, 0.1%-1% of an additive and the balance of a solvent.
    Type: Application
    Filed: June 26, 2019
    Publication date: February 20, 2020
    Inventors: Wei Li, Jingjing Xia, Bin Zhou, Dongfang Wang, Ce Zhao, Yingbin Hu, Wei Song
  • Patent number: 10564496
    Abstract: The present application provides an array substrate, which is divided into a plurality of pixel units, wherein each pixel unit is provided therein with a light filtering structure, the light filtering structure includes a first light shielding part and a second light shielding part, the second light shielding part includes a second light shielding part body and a light transmitting hole penetrating through the second light shielding part body, a light transmitting gap exists between a inner boundary of an orthographic projection of the second light shielding part body on a layer in which the first light shielding part is provided and a boundary of the first light shielding part, a transparent light transmitting space is formed above the first light shielding part, and the light transmitting gap allows light with a predetermined wavelength to transmit therethrough.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: February 18, 2020
    Assignee: BOE Technology Group Co., Ltd.
    Inventor: Dongfang Wang
  • Patent number: 10559601
    Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: February 11, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Tongshang Su, Jun Cheng, Ce Zhao, Bin Zhou, Dongfang Wang, Guangcai Yuan
  • Patent number: 10553801
    Abstract: The present disclosure relates to a substrate, a method for fabricating the same and an organic light emitting diode display device. The substrate includes a metal foil. A metal material used for the metal foil is capable of being anodized and a plurality of concave light trapping microstructures is formed on a surface of the metal foil.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: February 4, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Jun Wang, Guangyao Li, Dongfang Wang, Jun Liu, Guangcai Yuan, Leilei Cheng
  • Publication number: 20200033290
    Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.
    Type: Application
    Filed: June 26, 2019
    Publication date: January 30, 2020
    Inventors: Qinghe WANG, Liangchen YAN, Dongfang WANG, Tongshang SU, Leilei CHENG, Yongchao HUANG, Yang ZHANG, Guangyao LI, Guangcai YUAN
  • Publication number: 20200035721
    Abstract: There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
    Type: Application
    Filed: May 29, 2018
    Publication date: January 30, 2020
    Inventors: Tongshang Su, Guangcai Yuan, Dongfang Wang, Ce Zhao, Bin Zhou, Jun Liu, Jifeng Shao, Qinghe Wang, Yang Zhang
  • Publication number: 20200035716
    Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
    Type: Application
    Filed: April 28, 2019
    Publication date: January 30, 2020
    Inventors: Bin ZHOU, Binbin CAO, Liangchen YAN, Dongfang WANG, Ce ZHAO, Luke DING, Jun LIU
  • Publication number: 20200035767
    Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
    Type: Application
    Filed: June 10, 2019
    Publication date: January 30, 2020
    Inventors: Wei Song, Liangchen Yan, Ce Zhao, Dongfang Wang, Bin Zhou, Yuankui Ding, Jun Liu, Yingbin Hu, Wei Li
  • Publication number: 20200035841
    Abstract: A TFT and a method for manufacturing the TFT, an array substrate, and a display device are provided. An active layer of the TFT includes a channel region, a first conductive region and a second conductive region, and the channel region is arranged between the first conductive region and the second conductive region. The channel region includes a first side and a second side, the first side is opposite to the second side, the first side is in contact with a third side of the first conductive region, the second side is in contact with a fourth side of the second conductive region, and a length of the first side is greater than a length of the third side.
    Type: Application
    Filed: June 3, 2019
    Publication date: January 30, 2020
    Applicants: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Tongshang SU, Dongfang WANG, Qinghe WANG, Liangchen YAN
  • Publication number: 20200026044
    Abstract: The present invention relates to an optical lens assembly and an imaging device. The optical lens assembly comprises, in order from an object side to an image side: a first lens (L1) being a meniscus lens having a negative focal power, the first lens having an object side surface (S1) being a convex surface, and an image side surface (S2) being a concave surface; a second lens (L2) having a negative focal power, an image side surface (S4) of the second lens being a concave surface; a third lens (L3) being a meniscus lens having a positive focal power, the third lens having an object side surface (S5) being a concave surface, and an image side surface (S6) being a convex surface; a fourth lens (L4); a fifth lens (L5) cemented to the fourth lens; and a sixth lens (L6) having a positive focal power. With the optical lens assembly and the imaging device according to the present invention, high resolution can be obtained while maintaining the miniaturization of the optical lens assembly.
    Type: Application
    Filed: March 30, 2018
    Publication date: January 23, 2020
    Applicant: NINGBO SUNNY AUTOMOTIVE OPTECH CO., LTD.
    Inventors: Qiansen Xie, Dongfang Wang, Bo Yao
  • Publication number: 20200027729
    Abstract: The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 23, 2020
    Inventors: Tongshang Su, Dongfang Wang, Jun Liu, Qinghe Wang, Wuxia Fu, Liangchen Yan, Guangcai Yuan
  • Publication number: 20200027807
    Abstract: A power module, including: a first conductor, disposed at a first reference plane; a second conductor, disposed at a second reference plane, wherein projections of the first and second conductors on the first reference plane have a first overlap area; a third conductor, disposed at a third reference plane; a plurality of first switches, first ends of which are coupled to the first conductor; and a plurality of second switches, first ends of which are coupled to second ends of the first switches through the third conductor, and second ends of the second switches are coupled to the second conductor, wherein projections of minimum envelope areas of the first and second switches on the first reference plane have a second overlap area, and the first and second overlap areas have an overlap region. Heat sources of the power module are evenly distributed and its parasitic inductance is low.
    Type: Application
    Filed: August 7, 2019
    Publication date: January 23, 2020
    Applicant: Delta Electronics (Shanghai) CO., LTD
    Inventors: Wei CHENG, Shouyu HONG, Dongfang LIAN, Tao WANG, Zhenqing ZHAO
  • Publication number: 20200013867
    Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.
    Type: Application
    Filed: April 29, 2019
    Publication date: January 9, 2020
    Inventors: Tongshang SU, Dongfang Wang, Ce Zhao, Bin Zhou, Liangchen Yan
  • Publication number: 20200013806
    Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT).The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
    Type: Application
    Filed: May 7, 2019
    Publication date: January 9, 2020
    Inventors: Tongshang SU, Dongfang WANG, Jun CHENG, Jun LIU, Qinghe WANG, Guangyao LI, Liangchen YAN