Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.

Abstract: The present disclosure provides a transistor acoustic sensor element and a method for manufacturing the same, an acoustic sensor and a portable device. The transistor acoustic sensor element comprises a gate, a gate insulating layer, a first electrode, an active layer and a second electrode arranged on a base substrate, wherein the active layer has a nanowire three-dimensional mesh structure and thus can vibrate under the action of sound signals, so that the output current of the transistor acoustic sensor element changes correspondingly. Since the active layer having the nanowire three-dimensional mesh structure can sensitively sense weak vibration of acoustic waves, the sensitivity to sound signals of the transistor acoustic sensor element is improved.

Abstract: A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.

Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.

Abstract: The present disclosure provides a heating device for heating an OLED substrate, comprising: a heating plate, a support, and a temperature controller, the temperature controller is connected with the heating plate and the support respectively, and the temperature controller is used to synchronously heat the heating plate and the support, so that the temperature of the heating plate and the support are substantially the same; wherein the heating plate comprises an receiving portion for accommodating the support, the support is configured to be able to protrude from the heating plate and retract into the heating plate.

Abstract: The disclosure provides a display panel and a display device. The display panel includes a first substrate and a second substrate, the second substrate has an organic electroluminescent device, an anode layer of the organic electroluminescent device is away from the first substrate and a cathode layer thereof is closer to the first substrate than the anode layer; the cathode layer is electrically connected to an auxiliary electrode on a light entering surface of the first substrate through multiple conductive spacers, the cathode layer is a transparent electrode layer; the auxiliary electrode has a resistance smaller than that of the cathode layer of the organic electroluminescent device; the auxiliary electrode is a grid-shaped auxiliary electrode and in a non-display region, the auxiliary electrode is opaque; the multiple conductive spacers includes first conductive spacers on the auxiliary electrode and second conductive spacers on the cathode layer of the second substrate.

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus, the manufacturing method comprises: forming a base; forming a thin film transistor on the base, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer; forming a third insulating layer above the thin film transistor; forming a pixel electrode above the third insulating layer; forming a fourth insulating layer above the pixel electrode, a material of at least one of the base, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer includes an organic material, and a material of at least one of them includes an inorganic material.

Abstract: The present disclosure provides a thin film transistor, including a base substrate, an active layer and a source/drain, and a conductive layer. The active layer and an outer edge of the conductive layer are formed in the same etching process. The present disclosure further provides a method for manufacturing a thin film transistor, including forming an active material layer and a conductive material layer, forming a photoresist on the conductive material layer, exposing and developing the photoresist by means of a halftone mask, removing segments of the active material layer and the conductive material layer corresponding to a photoresist completely-removed region by a same etching process, partially removing the photoresist in a photoresist completely-retained region and completely removing the photoresist in a photoresist partially-retained region, and removing a segment of the conductive material layer corresponding to the photoresist partially-retained region.

Abstract: The present disclosure provides a thin film transistor, a thin film transistor array, and a method for detecting an object to be detected, wherein the thin film transistor is configured to detect a parameter of an object to be detected bound with a metal ion and includes an active layer, wherein: a carrier of the active layer without a metal element contained in the metal ion bound is of a first mobility, and a carrier of the active layer with the metal element bound is of a second mobility different from the first mobility.

Abstract: The present disclosure provides a thin film transistor, a display substrate, a method for preparing the same, and a display device including the display substrate. The method for preparing the thin film transistor includes: forming an inorganic insulating film layer in contact with an electrode of the thin film transistor by a plasma enhanced chemical vapor deposition process at power of 9 kW to 25 kW, at a temperature of 190° C. to 380° C. and by using a mixture of gases N2, NH3 and SiH4 in a volume ratio of N2:NH3:SiH4=(10˜20):(5˜10):(1˜2), such that a stress value of the inorganic insulating film layer is reduced to be less than or equal to a threshold, and the inorganic insulating layer comprises silicon nitride.

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

Abstract: A lens assembly for an optical imaging lens is disclosed, which includes a first lens, wherein the first lens has a negative power, a second lens, a third lens, a fourth lens, a fifth lens, and a sixth lens, wherein the sixth lens has a positive power, wherein the second lens and the third lens define a first cemented achromatic lens assembly, and the fourth lens and the fifth lens define a second cemented achromatic lens assembly, wherein the first lens, the first cemented achromatic lens assembly, the second cemented achromatic lens assembly and the sixth lens are orderly arranged along the direction from the object side to the image side.

Abstract: Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).

Abstract: Provided are a detection method and a detection device, the detection method includes: in a first writing stage, providing an active voltage to each data line, each power supply terminal, both ends of a first gate line to-be-detected, an absolute value of the active voltage of each data line is smaller than that of the active voltage of the power supply terminal, an absolute value of the active voltage of the first gate line to-be-detected is smaller than that of the active voltage of each data line; in a first detection stage, maintaining the active voltage of the power supply terminal, providing an inactive voltage to the first gate line to-be-detected and providing an active voltage to the data line, detecting voltages at second electrodes of storage capacitors corresponding to the first gate line to-be-detected, determining whether the first gate line to-be-detected has breakpoint according to the detected voltages.

Abstract: The present disclosure discloses an optical lens assembly. The optical lens assembly may include, sequentially from an object side to an image side along an optical axis, a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens. The first lens may have negative refractive power, a convex object-side surface and a concave image-side surface. The fourth lens may have positive refractive power, a convex object-side surface and a convex image-side surface. The fifth lens may have positive refractive power, a convex object-side surface and a convex image-side surface. The sixth lens may have negative refractive power, a concave object-side surface and a concave image-side surface. The seventh lens may have positive refractive power and a convex object-side surface.

Abstract: The present disclosure discloses an optical lens assembly including a first lens, a second lens, a third lens, a fourth lens, a fifth lens, a sixth lens and a seventh lens, which are arranged sequentially from an object side to an image side along an optical axis. The first lens has negative refractive power, an object-side surface thereof is convex, and an image-side surface thereof is concave. The second lens has negative refractive power, an object-side surface thereof is convex, and an image-side surface thereof is concave. The third lens has positive refractive power, and both of an object-side surface and an image-side surface thereof are convex. The fourth lens has refractive power. The fifth lens and the sixth lens are cemented to form a cemented lens. The seventh lens has positive refractive power, and both of an object-side surface and an image-side surface thereof are convex.

Abstract: The disclosure provides a display panel and a manufacturing method thereof. The display panel display panel comprises a first substrate and a second substrate which are assembled, the second substrate is provided with an organic electroluminescent device thereon, an anode layer of the organic electroluminescent device is away from the first substrate and a cathode layer thereof is closer to the first substrate than the anode layer; the cathode layer of the organic electroluminescent device is electrically connected to an auxiliary electrode on a light entering surface of the first substrate through multiple conductive spacers, the cathode layer is a transparent electrode layer; the auxiliary electrode has a resistance smaller than that of the cathode layer of the organic electroluminescent device; the auxiliary electrode is a grid-shaped auxiliary electrode and is provided in a non-display region, the auxiliary electrode is opaque and acts as a black matrix.

Abstract: The present disclosure discloses an optical lens assembly which includes, sequentially from an object side to an image side along an optical axis, a first lens, a second lens, a third lens, a fourth lens, a fifth lens and a sixth lens. The first lens may have negative refractive power, a convex object-side surface, and a concave image-side surface. The second lens may have negative refractive power, a convex object-side surface, and a concave image-side surface. The third lens may have positive refractive power, and both object-side and image-side surfaces thereof are convex. The fourth lens may have positive refractive power, and both object-side and image-side surfaces thereof are convex. The fifth lens may have negative refractive power, and both object-side and image-side surfaces thereof are concave. The sixth lens may have positive refractive power, and both object-side and image-side surfaces thereof are convex.