Abstract: A display device includes: a first substrate including: a display area; and a non-display area including a bending area and a pad area; a display element layer on the display area; a bending protective layer on the bending area; a flexible circuit board on the pad area; a circuit protective layer on the pad area, and completely covering the flexible circuit board; a first support member under the display area; and a second support member under the pad area, spaced from the first support member, and including: a first surface in contact with the first substrate; a second surface opposite to the first surface; a first side surface facing the first support member; and a second side surface. The second side surface includes a first inclined surface connected to the second surface, and the first inclined surface of the second support member overlaps with the circuit protective layer.

Abstract: A display device includes: a first substrate comprising a first surface and a second surface facing each other and having a rigid material; a second substrate on the first surface of the first substrate and having a flexible material; and a display layer on the second substrate and comprising at least one inorganic film and a plurality of light-emitting elements, wherein the first substrate, at an edge of a bending area where the second substrate is bent, further includes: a first side surface between the first surface and the second surface; and a first inclined surface between the first surface and the first side surface, and the at least one inorganic film does not overlap with the first inclined surface.

Abstract: A display device includes: a first substrate comprising a first surface and a second surface facing each other and having a rigid material; a second substrate on the first surface of the first substrate and having a flexible material; and an emission material layer on the second substrate and comprising a plurality of light-emitting elements, wherein the first substrate further comprises: an opening exposing the second substrate; a first side surface at an edge adjacent to the opening and between the first surface and the second surface; and a first inclined surface between the first surface and the first side surface, wherein the display device further comprises: a first high-curvature area overlapping the opening; and a first low-curvature area and a second low-curvature area on one side and an opposite side of the first high-curvature area, respectively, and wherein the first high-curvature area overlaps with the emission material layer.

Abstract: Provided are display device and method of fabricating display device. A display device includes a first substrate including a rigid material, and including a first surface, a second surface opposite to the first surface, and a first side surface between the first surface and the second surface, a protective layer on the first surface, a second substrate including a flexible material on the protective layer, and an emission material layer including light-emitting elements on the second substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device including a first substrate including a first area, a second area and a bending area between the first area and the second area; a display element layer disposed on the first area of the first substrate; multiple signal lines disposed on the bending area of the first substrate, the signal lines being spaced apart from one another in a first direction and electrically connected to the display element layer; and a bending protection layer disposed on the bending area of the first substrate and covering the signal lines, wherein the bending protection layer includes a first portion and a second portion, the first portion has an inclined surface, the second portion having an approximately flat surface, the second portion overlapping the signal lines including outermost signal lines, the first portion not overlapping the signal lines.

Abstract: A display device includes: a substrate comprising an open portion; a pad portion on the substrate and exposed through the open portion; a fanout line integrally formed with the pad portion; a data line electrically connected to the fanout line; a flexible film under the substrate and comprising a lead electrode inserted into the open portion of the substrate to directly contact the pad portion; and a contact portion covering a lower surface of the lead electrode and a lower surface of the pad portion to electrically connect the lead electrode and the pad portion.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 ?m or less.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A display device is provided. The display device includes a display panel including first and second display substrates that face each other, having an overlap area in which the first and second display substrates overlap with each other, and having a protruding area on one side of the overlap area, a sealing member between the first and second display substrates along edges of the overlap area, and at least one chamfered portion including a first chamfered portion, which is formed on at least one side of the protruding area, and a second chamfered portion, which is formed on the overlap area and adjacent to the first chamfered portion, wherein in the second chamfered portion, an end of the first display substrate is positioned beyond an end of the second display substrate.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: Disclosed is a gas vehicle injector having improved lubrication characteristics. The injector is provided with a housing installed at a fuel supply pipe of an engine, a needle valve installed at a lower portion of the housing and having an injection nozzle, a coil installed inside the housing and generating a magnetomotive force by receiving electric power, a solenoid having a core generating an attractive force by the magnetomotive force, and a plunger reciprocating and installed below the solenoid, and the injector includes: a depression groove circumferentially formed on an inner circumferential surface of the housing; and a communication groove formed on the inner circumferential surface of the housing, and communicating with the depression groove.