Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

Abstract: An apparatus including a memory module and power converter and method of operating the same. In one embodiment, the apparatus includes a memory module, located on a circuit board, configured to operate from a first voltage and a second voltage being a multiple of the first voltage. The apparatus also includes a power converter employing a switched-capacitor power train, located on the circuit board, configured to provide the second voltage for the memory module from the first voltage.

Abstract: A controller, power converter and method of controlling a power switch therein to improve power conversion efficiency at low output current. In one embodiment, the power converter includes a power switch coupled to a source of electrical power, and a controller coupled to a control terminal of the power switch and to an output of the power converter. The controller is configured to control a conductivity of the power switch at a selected switching frequency from a set of discrete switching frequencies as a function of an output characteristic of the power converter.

Abstract: Machine for alternating conveyor belt livestock loading with pre-loader having conveyor belt, main conveyor section having lift section, top section, and conveyor belt, swing belt section, which may or may not be pivotable, having conveyor belt, and auto-loader section having plurality of conveyor belts.

Abstract: A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.

Abstract: The invention comprises a polymerizable monomer composition for application to the nail surface and polymerization thereon to yield an artificial nail structure, comprising at least one multicarbonyl-vinyl containing monomer; a polymerized artificial nail structure having a thickness of about 10-60 mils, and a modulus of elasticity of about 550-800 N/m2, comprising a copolymer of at least one ethylenically unsaturated monomer and a multicarbonyl vinyl-containing monomer; a method for reducing, ameliorating, or eliminating delamination of an artificial nail structure from the natural nail surface; a method for improving adhesion of an artificial nail structure to the nail surface; and a method for reducing premature gelation of a liquid monomer composition.

Abstract: Apparatus and methods described herein provide for the management of noise associated with a duct. A sound-dampening apparatus is provided consisting of a duct through which a fluid flows, such as an air duct. A flexuous cord is helically wound around the inner or outer surface of the duct at a pitch corresponding to a selected acoustical frequency range associated with the fluid flow through the duct.

Abstract: Provided are methods for producing a reprogrammed fibroblast. The methods can include growing a plurality of fibroblasts in monolayer culture to confluency; and disrupting the monolayer culture to place at least a fraction of the plurality of fibroblasts into suspension culture under conditions sufficient to form one or more embryoid body-like spheres, wherein the one or more embryoid body-like spheres comprise one or more reprogrammed fibroblasts that express one or more markers not expressed by a fibroblast growing in the monolayer culture prior to the disrupting step. Also provided are reprogrammed fibroblasts produced by the disclosed methods, formulations that include reprogrammed fibroblasts, and methods for treating an injury to a tissue in a subject by administering to a subject in need thereof a composition of reprogrammed fibroblast cells in a pharmaceutically acceptable carrier.

Abstract: A damper for shafts includes an elastomeric ring having a plurality of holes therethrough and an inertia ring having two portions such that the portions encapsulate the elastomeric ring and secure the elastomeric ring in a position. The inertia ring includes openings corresponding to the plurality of holes in the elastomeric ring. A first housing portion configured to receive first fasteners through a first set of openings in the elastomeric ring and the inertia ring to secure the first housing portion to a second housing portion. The first and second housing portions form a surface to receive an inner portion of the elastomeric ring such that the inertia ring floats on the elastomeric ring without the inertia ring contacting the first and second housing portions.

Abstract: A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

Abstract: A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

Abstract: A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

Abstract: A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

Abstract: A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

Abstract: An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

Abstract: Machine for alternating conveyor belt livestock loading with pre-loader having conveyor belt, main conveyor section having lift section, top section, and conveyor belt, swing belt section having conveyor belt, and autoloader section having plurality of conveyor belts.

Abstract: A module having a stacked magnetic device and semiconductor device, and method of forming the same. In one embodiment, the module includes a printed wiring board including a patterned conductor formed on an upper surface thereof. The module also includes a magnetic core mounted on the upper surface of the printed wiring board proximate the patterned conductor and a semiconductor device mounted on an upper surface of the magnetic core.